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公开(公告)号：US12123769B2
公开(公告)日：2024-10-22
申请号：US17412739
申请日：2021-08-26
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: G01J1/44 , F21V5/04 , G01S7/481 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/08 , G02B26/10 , H01L25/00 , H01L31/167 , H01L31/18 , H01S3/02 , H01S5/00 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/30 , H01S5/40 , H01S5/42 , G02B3/00 , H01S5/02 , H01S5/02255
CPC classification number: G01J1/44 , F21V5/041 , F21V5/045 , G01S7/4815 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/0883 , G02B26/10 , H01L25/50 , H01L31/167 , H01L31/18 , H01S3/025 , H01S5/0028 , H01S5/0071 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/0262 , H01S5/04254 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/18394 , H01S5/18397 , H01S5/30 , H01S5/40 , H01S5/4025 , H01S5/4037 , H01S5/4075 , H01S5/423 , G01J2001/448 , G02B3/0006 , H01S5/0216 , H01S5/0217 , H01S5/02255 , H01S5/04257
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号：US20210396851A1
公开(公告)日：2021-12-23
申请号：US17412739
申请日：2021-08-26
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , H01S5/042 , H01S5/02253 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号：US20210356564A1
公开(公告)日：2021-11-18
申请号：US17443604
申请日：2021-07-27
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter , Russell Kanjorski
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.
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公开(公告)号：US10530130B2
公开(公告)日：2020-01-07
申请号：US15951727
申请日：2018-04-12
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: H01S5/183 , H01S5/00 , H01S5/026 , H01S5/022 , H01S5/40 , H01S5/42 , H01L31/167 , H01L31/18 , H01L25/00 , H01S3/02 , H01S5/30 , G01S17/02 , F21V5/04 , G02B26/10 , H01S5/062 , G01J1/44 , G01S7/481 , G02B5/08 , G01S17/89 , G02B3/00
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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15.发明申请公开(公告)号：US20180301589A1
公开(公告)日：2018-10-18
申请号：US15951884
申请日：2018-04-12
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: H01L31/167 , G01J1/44 , H01S5/40 , H01L31/18
Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.
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Patent Agency Ranking
16.发明授权公开(公告)号：US11187789B2
公开(公告)日：2021-11-30
申请号：US15951884
申请日：2018-04-12
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02 , G02B3/00 , H01S5/12 , H01S5/02
Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.
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17.发明申请公开(公告)号：US20220120866A1
公开(公告)日：2022-04-21
申请号：US17511715
申请日：2021-10-27
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , H01S5/042 , H01S5/02253 , G01S17/894 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.
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18.发明申请公开(公告)号：US20200161835A1
公开(公告)日：2020-05-21
申请号：US16693666
申请日：2019-11-25
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter
IPC: H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , F21V5/04 , H01S5/022 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G01S7/481 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号：US10522973B2
公开(公告)日：2019-12-31
申请号：US15951760
申请日：2018-04-12
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter , Russell Kanjorski
IPC: H01S5/40 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , F21V5/04 , H01S5/022 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02 , G01S17/89 , G02B3/00 , H01S5/02 , H01S5/12
Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.
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公开(公告)号：US20180301874A1
公开(公告)日：2018-10-18
申请号：US15951760
申请日：2018-04-12
Applicant: Sense Photonics, Inc.
Inventor： Scott Burroughs , Brent Fisher , James Carter , Russell Kanjorski
Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.
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