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公开(公告)号：US10199531B2
公开(公告)日：2019-02-05
申请号：US15660191
申请日：2017-07-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Daniel Billingsley , Robert M. Kennedy , Wenhong Sun , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
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公开(公告)号：US20180339075A1
公开(公告)日：2018-11-29
申请号：US15989261
申请日：2018-05-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Robert M. Kennedy , Faris Mills Morrison Estes , Alexander Dobrinsky
Abstract: An approach for the treatment of surfaces in public places with ultraviolet light is disclosed. In one embodiment, a disinfection illuminator having ultraviolet radiation sources can irradiate a number of contact surfaces. A control unit can control the ultraviolet irradiation of the contact surfaces. The disinfection illuminator is suitable for a wide variety of devices that are used by the general public. Gas station pumps, door knobs, key pads, and bathrooms are illustrative of examples of some devices and places having commonly-used surfaces that can be treated by the disinfection illuminator.
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公开(公告)号：US20170179335A1
公开(公告)日：2017-06-22
申请号：US15391948
申请日：2016-12-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Daniel Billingsley , Robert M. Kennedy , Wenhong Sun , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L33/00 , H01L29/66 , H01L29/778 , H01L33/32 , H01L33/12
CPC classification number: H01L33/0025 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/24 , H01L33/32 , H01L2224/16225
Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
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公开(公告)号：US20170098539A1
公开(公告)日：2017-04-06
申请号：US15283459
申请日：2016-10-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Mikhail Gaevski , Igor Agafonov , Robert M. Kennedy , Alexander Dobrinsky , Michael Shur , Emmanuel Lakios
IPC: H01L21/02 , H01L21/66 , H01L21/302 , H01L29/06 , H01L21/67 , H01L21/687
CPC classification number: H01L22/20 , C23C16/4586 , C23C16/46 , H01L21/02021 , H01L21/302 , H01L21/67103 , H01L21/67248 , H01L21/68735 , H01L21/68757 , H01L29/0692
Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
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公开(公告)号：US20170005228A1
公开(公告)日：2017-01-05
申请号：US15265975
申请日：2016-09-15
Applicant: Sensor Electronic Technology, Inc.
Inventor： Daniel Billingsley , Robert M. Kennedy , Wenhong Sun , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/12 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L2224/16225
Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
Abstract translation: 提供了用于制造光电子器件的异质结构。 异质结构包括诸如n型接触或包覆层的层，其包括插入其中的薄子层。 薄的子层可以遍及整个层间隔开，并由用于该层的材料制成的中间子层隔开。 薄的子层可以具有与插入的子层不同的组成，其在异质结构的生长期间改变应力存在。
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Patent Agency Ranking
公开(公告)号：US20210105881A1
公开(公告)日：2021-04-08
申请号：US17123957
申请日：2020-12-16
Applicant: Sensor Electronic Technology, Inc.
Inventor： Arthur Peter Barber , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Robert M. Kennedy
IPC: H05B47/105 , A01G7/04
Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.
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公开(公告)号：US20190099613A1
公开(公告)日：2019-04-04
申请号：US16142955
申请日：2018-09-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Faris Mills Morrison Estes , Robert M. Kennedy
Abstract: A wearable ultraviolet light phototherapy device is disclosed. The wearable ultraviolet light phototherapy device can have a substrate or a housing that is to be worn on a body part of a patient. At least one ultraviolet light emitting source located about the substrate or housing can deliver ultraviolet radiation into the body part of the patient. A control module can control operation of the at least one ultraviolet light emitting source. To this extent, the control module can direct the at least one ultraviolet light emitting source to deliver a predetermined amount of ultraviolet radiation at a peak wavelength into the body part of a patient. The control module can determine the predetermined amount of ultraviolet radiation as a function of the patient's susceptibility to ultraviolet radiation.
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公开(公告)号：US20180243458A1
公开(公告)日：2018-08-30
申请号：US15962574
申请日：2018-04-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Timothy James Bettles , Alexander Dobrinsky , Remigijus Gaska , Michael Shur , Robert M. Kennedy , Arthur Peter Barber, III , Carlton Gibson
CPC classification number: A61L2/24 , A61L2/10 , A61L9/20 , A61L2202/122 , A61L2202/14 , A61L2209/111 , A61L2209/12 , A61L2209/212 , F25D17/042 , F25D2317/0417
Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
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公开(公告)号：US20170338371A1
公开(公告)日：2017-11-23
申请号：US15660191
申请日：2017-07-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Daniel Billingsley , Robert M. Kennedy , Wenhong Sun , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/24 , H01L33/32 , H01L2224/16225
Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
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公开(公告)号：US09735315B2
公开(公告)日：2017-08-15
申请号：US15265975
申请日：2016-09-15
Applicant: Sensor Electronic Technology, Inc.
Inventor： Daniel Billingsley , Robert M. Kennedy , Wenhong Sun , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L29/06 , H01L33/12 , H01L33/32 , H01L33/00 , H01L21/02 , H01L29/15 , H01L29/20 , H01L33/20 , H01L33/24 , H01L33/06
CPC classification number: H01L33/12 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L2224/16225
Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
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