公开(公告)号：US20080142912A1

公开(公告)日：2008-06-19

申请号：US11928519

申请日：2007-10-30

Applicant: Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

Inventor： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC: H03H9/02 ,  H01L21/8228

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US20110306153A1

公开(公告)日：2011-12-15

申请号：US13215468

申请日：2011-08-23

Applicant: Ryuji KIHARA ,  Shogo INABA

Inventor： Ryuji KIHARA ,  Shogo INABA

IPC: H01L21/66 ,  H01L21/00

CPC classification number: H03H3/0077 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.

Abstract translation: 一种制造MEMS器件的方法包括：在基板上形成具有MEMS结构的覆盖结构和位于MEMS结构的外围并向外部敞开的中空部分; 并且通过从外部向MEMS结构的外围提供蚀刻气体，在气相中对MEMS结构进行表面蚀刻。

公开(公告)号：US20100178717A1

公开(公告)日：2010-07-15

申请号：US12684248

申请日：2010-01-08

Applicant: Ryuji KIHARA ,  Shogo INABA

Inventor： Ryuji KIHARA ,  Shogo INABA

IPC: H01L21/66

CPC classification number: H03H3/0077 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/02511

Abstract: A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.

Abstract translation: 一种制造MEMS器件的方法包括：在基板上形成具有MEMS结构的覆盖结构和位于MEMS结构的外围并向外部敞开的中空部分; 并且通过从外部向MEMS结构的外围提供蚀刻气体，在气相中对MEMS结构进行表面蚀刻。

公开(公告)号：US20100148284A1

公开(公告)日：2010-06-17

申请号：US12710773

申请日：2010-02-23

Applicant: Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

Inventor： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC: H01L29/84

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US20090302707A1

公开(公告)日：2009-12-10

申请号：US12534468

申请日：2009-08-03

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H02N11/00

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H9/02433 ,  H03H2009/02511

Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.

Abstract translation: 一种微电子机械系统谐振器，包括：基板; 形成在基板上的固定电极; 以及可动电极，其布置成面对固定电极并且通过作用在固定电极和可动电极之间的间隙的静电吸引力或静电排斥力驱动。 面对固定电极的可动电极的支撑梁的内表面具有倾斜表面。

公开(公告)号：US20080224241A1

公开(公告)日：2008-09-18

申请号：US12045990

申请日：2008-03-11

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US20120104593A1

公开(公告)日：2012-05-03

申请号：US13286494

申请日：2011-11-01

Applicant: Yoko KANEMOTO ,  Akira SATO ,  Shogo INABA

Inventor： Yoko KANEMOTO ,  Akira SATO ,  Shogo INABA

IPC: H01L23/06 ,  H01L21/52

CPC classification number: B81C1/00333 ,  B81C2203/0145

Abstract: An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

Abstract translation: 根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

公开(公告)号：US20120025922A1

公开(公告)日：2012-02-02

申请号：US13270868

申请日：2011-10-11

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H03B5/30

CPC classification number: H03H9/2457 ,  H03H3/0072 ,  H03H9/02433 ,  H03H2009/02511

Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.

Abstract translation: 一种微电子机械系统谐振器，包括：基板; 形成在基板上的固定电极; 以及可动电极，其布置成面对固定电极并且通过作用在固定电极和可动电极之间的间隙的静电吸引力或静电排斥力驱动。 面对固定电极的可动电极的支撑梁的内表面具有倾斜表面。

公开(公告)号：US20110303457A1

公开(公告)日：2011-12-15

申请号：US13168561

申请日：2011-06-24

Applicant: Shogo INABA ,  Akira SATO

Inventor： Shogo INABA ,  Akira SATO

IPC: H01L23/28

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US20110095383A1

公开(公告)日：2011-04-28

申请号：US12981747

申请日：2010-12-30

Applicant: Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

Inventor： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC: H01L29/84

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.