公开(公告)号：US20240286891A1

公开(公告)日：2024-08-29

申请号：US18508323

申请日：2023-11-14

Applicant: HS Vision Ltd.

Inventor： Alexander MacDonald

IPC: B81B7/00 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81B7/0048 ,  B81C1/00325 ,  G01L9/0072 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C2201/0132

Abstract: Disclosed are lenses and eyewear that provide the user with both forward vision and rearward vision by means of an angled, reflective portion of the lens.

公开(公告)号：US11987495B2

公开(公告)日：2024-05-21

申请号：US18206520

申请日：2023-06-06

Applicant: SiTime Corporation

Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/31 ,  H01L23/34 ,  H01L23/498 ,  H10N30/30

CPC classification number: B81B7/0083 ,  B81B7/007 ,  B81B7/0077 ,  B81C1/0023 ,  B81C1/00301 ,  B81C1/00333 ,  B81C1/00341 ,  H01L23/34 ,  H01L23/498 ,  H10N30/302 ,  B81B2201/0271 ,  B81B2207/07 ,  B81B2207/094 ,  B81C2201/016 ,  B81C2203/0118 ,  B81C2203/0154 ,  H01L23/3107 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

公开(公告)号：US11932530B2

公开(公告)日：2024-03-19

申请号：US18165118

申请日：2023-02-06

Applicant: Stathera IP Holdings Inc.

Inventor： George Xereas ,  Vahid Tayari ,  Ahmed Khorshid ,  Charles Allan

IPC: B81B3/00 ,  B81B7/00 ,  H03H9/02 ,  H03H9/24

CPC classification number: B81B3/0021 ,  B81B7/0087 ,  H03H9/02448 ,  B81B2201/0271 ,  H03H2009/2442

Abstract: An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.

公开(公告)号：US11904356B2

公开(公告)日：2024-02-20

申请号：US16699185

申请日：2019-11-29

Applicant: Hitachi, Ltd.

Inventor： Taiichi Takezaki ,  Masakazu Kawano ,  Shuntaro Machida

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00 ,  A61B8/12 ,  A61B8/00 ,  A61B5/00 ,  G01N29/24

CPC classification number: B06B1/0292 ,  A61B5/0095 ,  A61B8/12 ,  A61B8/4494 ,  B81B3/0021 ,  B81C1/00158 ,  G01N29/2406 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0105 ,  G01N2291/101

Abstract: A highly-sensitive ultrasonic transducer with good yield is provided. The ultrasonic transducer includes a cavity layer, a pair of electrodes positioned above and below the cavity layer, insulating layers disposed above and below each of the pair of electrodes, and a filled hole that penetrates, in a vertical direction, at least a portion of the insulating layers positioned above the cavity layer. When the ultrasonic transducer is viewed from above, each electrode of the pair of electrodes includes, at a position that overlaps the embedded hole, a non-electrode region where the electrodes are not formed.

公开(公告)号：US20240015447A1

公开(公告)日：2024-01-11

申请号：US18371488

申请日：2023-09-22

Applicant: InvenSense, Inc.

Inventor： Roberto Brioschi ,  Kazunori Hayata ,  Jr-Cheng Yeh ,  Dinesh Kumar Solanki

IPC: H04R19/04 ,  B81B7/00 ,  B81C1/00 ,  H04R1/04 ,  H04R3/00

CPC classification number: H04R19/04 ,  B81B7/0064 ,  B81C1/00333 ,  H04R1/04 ,  H04R3/00 ,  B81B2201/0257 ,  H04R2201/003 ,  B81B2201/0292 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2203/0109 ,  B81B2201/0264

Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.

公开(公告)号：US11855604B2

公开(公告)日：2023-12-26

申请号：US17031181

申请日：2020-09-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Federico Vercesi ,  Lorenzo Corso ,  Giorgio Allegato ,  Gabriele Gattere

IPC: H03H9/10 ,  B81B7/00 ,  B81C1/00 ,  H03H3/02 ,  H03H9/17 ,  H03H9/15

CPC classification number: H03H9/1021 ,  B81B7/0038 ,  B81C1/00285 ,  H03H3/02 ,  H03H9/17 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C2201/0105 ,  B81C2203/0118 ,  H03H2003/022 ,  H03H2003/027 ,  H03H2009/155

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

公开(公告)号：US20230399225A1

公开(公告)日：2023-12-14

申请号：US17838023

申请日：2022-06-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： PO CHEN YEH ,  YI-HSIEN CHANG ,  FU-CHUN HUANG ,  CHING-HUI LIN ,  CHIAHUNG LIU ,  SHIH-FEN HUANG ,  CHUN-REN CHENG

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81C1/00301 ,  B81B2201/0271 ,  B81C2203/0792 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/097 ,  B81B2203/0127

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

公开(公告)号：US11834326B2

公开(公告)日：2023-12-05

申请号：US17461835

申请日：2021-08-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kei Masunishi ,  Yasushi Tomizawa ,  Etsuji Ogawa ,  Ryunosuke Gando ,  Shiori Kaji ,  Hiroki Hiraga ,  Fumito Miyazaki ,  Daiki Ono

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2203/04 ,  B81B2203/06

Abstract: According to one embodiment, a sensor includes a first detection element. The first detection element includes a base body, a first support member fixed to the base body, a conductive first movable member, and a first conductive part fixed to the base body. The first movable member includes first, second, third, fourth and fifth movable parts. In a second direction crossing a first direction from the base body toward the first movable member, the third movable part is between the first and second movable parts. In the second direction, the fourth movable part is between the first and third movable parts. In the second direction, the fifth movable part is between the third and second movable parts. The first movable part is supported by the first support member. The second, third, fourth and fifth movable parts are separated from the base body.

公开(公告)号：US20230302495A1

公开(公告)日：2023-09-28

申请号：US17993899

申请日：2022-11-24

Applicant: Zhejiang Xiansheng Technology Co., Ltd.

Inventor： Feng Yin ,  Hui Li

IPC: B06B1/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B81B7/0006 ,  B81C1/00238 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/04 ,  B81B2207/03 ,  B81B2207/07 ,  B81B2207/012 ,  B81C2201/0104 ,  B81C2203/036 ,  B81C2203/0792

Abstract: The present invention provides a new architecture of system-on-chip ultrasonic transducer array. It is based on fusion bond of two active wafers which have prefabricated CMOS integrated circuits and CMUT structures; precise thin-down of one wafer to form CMUT monocrystalline silicon membrane; and then to vertically connect CMUT array to CMOS IC layers underneath. This architecture can realize a high-density CMUT array with multiple layers of CMOS devices, such as all supporting CMOS ICs, to achieve a SOC solution. The present invention further provides a manufacturing method for above-mentioned SOC CMUT approach, and this manufacturing process can be realized in both 8 inch and 12-inch wafer manufacturing fabs. The disclosed manufacturing processes are more compatible with existing CMOS process flow, more cost-competitive for mass production.

公开(公告)号：US11766696B2

公开(公告)日：2023-09-26

申请号：US16784186

申请日：2020-02-06

Applicant: BFLY Operations, Inc.

Inventor： Lingyun Miao ,  Jianwei Liu ,  Jonathan M. Rothberg

IPC: B06B1/00 ,  B06B1/02 ,  H10N30/06

CPC classification number: B06B1/0292 ,  H10N30/06 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0101 ,  B81C2201/013 ,  B81C2201/0147 ,  B81C2201/0174 ,  B81C2203/0714

Abstract: A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.