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公开(公告)号：US20130099630A1
公开(公告)日：2013-04-25
申请号：US13712218
申请日：2012-12-12
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Satoru MATSUDA , Takashi MATSUDA , Michio MIURA
IPC: H01L41/047
CPC classification number: H01L41/047 , H03H9/02102 , H03H9/02834 , H03H9/131 , H03H9/174
Abstract: An acoustic wave device includes: an electrode that excites an acoustic wave and is located on a substrate; and a silicon oxide film that is located so as to cover the electrode and is doped with an element or molecule displacing O in a Si—O bond, wherein the element or molecule is F, H, CH3, CH2, Cl, C, N, P, or S.
Abstract translation: 声波装置包括：激发声波并位于基板上的电极; 以及氧化硅膜，其被定位成覆盖电极并且掺杂有在Si-O键中置换O的元素或分子，其中元素或分子是F，H，CH 3，CH 2，Cl，C，N ，P或S.
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公开(公告)号：US20200161238A1
公开(公告)日：2020-05-21
申请号：US16655994
申请日：2019-10-17
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Takeshi SAKASHITA , Takashi MATSUDA
Abstract: An inductor includes: a substrate; a first wiring line located on the substrate; a second wiring line located above the first wiring line and spaced from the first wiring line through an air gap, at least a part of the second wiring line overlapping with at least a part of the first wiring line in plan view; a first supporting post connecting ends of the first and second wiring lines such that a direct current conducts between the first and second wiring lines through the first supporting post; and a second supporting post provided such that the second supporting post overlaps with the second wiring line in plan view, and overlaps with the first wiring line in plan view or is surrounded by the first wiring line in plan view, the second supporting post being insulated from the first wiring line, the second supporting post supporting the second wiring line.
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公开(公告)号：US20170373669A1
公开(公告)日：2017-12-28
申请号：US15599367
申请日：2017-05-18
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Masafumi IWAKI , Takashi MATSUDA , Jun TSUTSUMI
CPC classification number: H03H9/6489 , H03H9/02944 , H03H9/14535 , H03H9/14541 , H03H9/14552 , H03H9/1457 , H03H9/25
Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and a pair of grating electrodes that is formed on the piezoelectric substrate, one of the pair of grating electrodes including a plurality of first electrode fingers having electric potentials equal to each other, another of the pair of grating electrodes including a plurality of second electrode fingers having electric potentials that differ from the electric potentials of the plurality of first electrode fingers and are equal to each other, two second electrode fingers of the plurality of second electrode fingers being located between at least a pair of adjacent first electrode fingers of the plurality of first electrode fingers, Pg differing from λ/4 where λ represents a wavelength of an acoustic wave excited by the plurality of first electrode fingers and the plurality of second electrode fingers and Pg represents a distance between centers of the two second electrode fingers.
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公开(公告)号：US20170264262A1
公开(公告)日：2017-09-14
申请号：US15416263
申请日：2017-01-26
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Hidetaro NAKAZAWA , Masafumi IWAKI , Tabito TANAKA , Takashi MATSUDA
CPC classification number: H03H9/1457 , H03H9/14532 , H03H9/25 , H03H9/64 , H03H9/725
Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.
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公开(公告)号：US20160373084A1
公开(公告)日：2016-12-22
申请号：US15165175
申请日：2016-05-26
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Hidetaro NAKAZAWA , Takashi MATSUDA
IPC: H03H9/64 , H03H9/25 , H01L41/047
CPC classification number: H03H9/6489 , H03H9/02622 , H03H9/02881 , H03H9/02889
Abstract: A surface acoustic wave device includes: comb-shaped electrodes each including electrode fingers and dummy electrode fingers; and additional films located to cover gaps between tips of the electrode fingers of one of the comb-shaped electrodes and tips of the dummy electrode fingers of the other, wherein each of the additional films overlap with at least one of the electrode fingers and the dummy electrode fingers located lateral to the corresponding gap in a first direction in which the electrode fingers extend or in a second direction intersecting with the first direction, and a distance G of the gap is 0
Abstract translation: 表面声波装置包括：梳状电极，每个梳状电极包括电极指和虚拟电极指; 以及附加膜，以覆盖一个梳状电极的一个的电极指的尖端与另一个的虚拟电极指的尖端之间的间隙，其中每个附加膜与电极指和虚拟的至少一个重叠 电极指沿着电极指的第一方向或与第一方向交叉的第二方向位于相应的间隙的横向，间隙的距离G为0
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Patent Agency Ranking
公开(公告)号：US20160182010A1
公开(公告)日：2016-06-23
申请号：US14824878
申请日：2015-08-12
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Jun TSUTSUMI , Yoshio SATO , Tabito TANAKA , Takashi MATSUDA
CPC classification number: H03H9/14547 , H03H9/059 , H03H9/1452 , H03H9/14561 , H03H9/14564 , H03H9/1457 , H03H9/14594 , H03H9/64 , H03H9/6483
Abstract: An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.
Abstract translation: 声波装置包括：压电基板; 以及形成在所述压电基板上的IDT，各向异性系数为正，所述IDT的电极指重叠的重叠区域包括中心区域和边缘区域，所述中心区域和边缘区域中的电极指连续形成， 边缘区域中的电极指在中心区域相对于电极指倾斜，使得边缘区域中的电极指的宽度方向上的间距大于电极指的宽度方向上的间距， 并且中心区域中的宽度方向与压电基板的晶轴取向之间的角度小于边缘区域中的宽度方向与晶轴取向之间的角度。
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公开(公告)号：US20190207583A1
公开(公告)日：2019-07-04
申请号：US16198284
申请日：2018-11-21
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Shinpei MIURA , Satoshi IMASU , Takashi MATSUDA , Masafumi IWAKI
Abstract: An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes that is located on the piezoelectric substrate, includes a metal film, and excites a surface acoustic wave, the metal film being mainly composed of a metal having a melting point equal to or higher than a melting point of Pt, the metal film having a first region in which a crystal grain has a columnar shape and a second region that is located on and/or under the first region in a stacking direction and has less crystallinity than the first region or has an amorphous structure.
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18.发明申请公开(公告)号：US20170279433A1
公开(公告)日：2017-09-28
申请号：US15451667
申请日：2017-03-07
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Fumiya MATSUKURA , Kentaro NAKAMURA , Takashi MATSUDA , Jun TSUTSUMI , Junichi HAMASAKI
CPC classification number: H03H9/14541 , H03H3/04 , H03H9/02559 , H03H9/605 , H03H9/64 , H03H2003/0414
Abstract: An acoustic wave resonator includes: a piezoelectric substrate; an IDT located on the piezoelectric substrate and including comb-shaped electrodes facing each other, each of the comb-shaped electrodes including: electrode fingers exciting an acoustic wave; and a bus bar to which the electrode fingers are connected; a dielectric film located on the piezoelectric substrate in an overlap region, where the electrode fingers of one of the comb-shaped electrodes and the electrode fingers of the other overlap, so as to cover the electrode fingers; and an additional film located on the dielectric film in the overlap region and having a density greater than that of the dielectric film, and of which a film thickness in edge regions corresponding to both edges of the overlap region in an extension direction of the electrode fingers is greater than a film thickness in a central region sandwiched between the edge regions in the overlap region.
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公开(公告)号：US20180316333A1
公开(公告)日：2018-11-01
申请号：US15958756
申请日：2018-04-20
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Fumiya MATSUKURA , Satoshi IMASU , Takashi MATSUDA
Abstract: An acoustic wave resonator includes: an IDT located on a piezoelectric substrate, including comb-shaped electrodes facing each other and including electrode fingers and a bus bar connecting the electrode fingers; a first silicon oxide film located on the electrode fingers in an overlap region where the electrode fingers overlap and having a film thickness in a part of edge regions, which correspond to both ends of the overlap region, equal to or less than that in a center region sandwiched between the edge regions; and a second silicon oxide film located on the electrode fingers, containing an element slowing an acoustic velocity in a silicon oxide film when being added to the silicon oxide film, having a concentration of the element greater than that in the first silicon oxide film, and having a film thickness in a part of the edge regions greater than that in the center region.
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公开(公告)号：US20170370791A1
公开(公告)日：2017-12-28
申请号：US15615012
申请日：2017-06-06
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Kentaro NAKAMURA , Fumiya MATSUKURA , Naoki TAKAHASHI , Takashi MATSUDA , Tsutomu MIYASHITA
Abstract: An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.
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