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11.发明申请公开(公告)号：US20190324097A1
公开(公告)日：2019-10-24
申请号：US16502317
申请日：2019-07-03
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J.R. Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.
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公开(公告)号：US10147537B2
公开(公告)日：2018-12-04
申请号：US15832884
申请日：2017-12-06
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01L27/02 , H01F27/34 , H01L43/12 , H01L23/528 , H01L23/522 , G01R33/04 , G01R33/00 , H01F27/24 , H01F27/28 , H01L27/22 , H01L43/02
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US09893119B2
公开(公告)日：2018-02-13
申请号：US15070413
申请日：2016-03-15
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US09870858B2
公开(公告)日：2018-01-16
申请号：US15399937
申请日：2017-01-06
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01L27/02 , H01F27/34 , H01F27/24 , H01F27/28 , H01L27/22 , H01L43/02 , H01L43/12 , H01L23/528 , H01L23/522 , G01R33/04 , G01R33/00
CPC classification number: H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US20170328961A1
公开(公告)日：2017-11-16
申请号：US15152002
申请日：2016-05-11
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Ricky Alan Jackson , Ann Margaret Gabrys
Abstract: A fluxgate device that includes a first magnetic core and a second magnetic core. The first magnetic core has a first magnetized direction that deviates from a first sense direction by more than 0 degree and less than 90 degrees. The second magnetic core is arranged orthogonally to the first magnetic core. The second magnetic core has a second magnetized direction that deviates from a second sense direction by more than 0 degree and less than 90 degrees.
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Patent Agency Ranking
公开(公告)号：US11237223B2
公开(公告)日：2022-02-01
申请号：US16521053
申请日：2019-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jo Bito , Benjamin Stassen Cook , Dok Won Lee , Keith Ryan Green , Ricky Alan Jackson , William David French
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
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公开(公告)号：US11004929B2
公开(公告)日：2021-05-11
申请号：US16596972
申请日：2019-10-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , Erika Lynn Mazotti , Mark Robert Visokay , William David French , Ricky Alan Jackson , Wai Lee
IPC: H01L49/02 , G01K7/22 , H01L23/522 , H01L27/07 , G01K7/16
Abstract: Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.
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公开(公告)号：US10374004B2
公开(公告)日：2019-08-06
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US10365123B2
公开(公告)日：2019-07-30
申请号：US15656749
申请日：2017-07-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , Erika Lynn Mazotti , William David French
Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.
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公开(公告)号：US20190157342A1
公开(公告)日：2019-05-23
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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