-
公开(公告)号：US09355901B2
公开(公告)日：2016-05-31
申请号：US14686222
申请日：2015-04-14
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC: H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/522 , H01L23/00 , H01L23/498
CPC classification number: H01L21/76879 , H01L21/76802 , H01L21/76898 , H01L23/481 , H01L23/4985 , H01L23/5226 , H01L24/06 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00
Abstract: A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate.
-
公开(公告)号：US09245670B2
公开(公告)日：2016-01-26
申请号：US14181466
申请日：2014-02-14
Applicant: Tessera, Inc.
Inventor： Cyprian Uzoh , Craig Mitchell
CPC classification number: H01B13/0036 , H01L24/43 , H01L24/45 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/4518 , H01L2224/45184 , H01L2224/45565 , H01L2224/45572 , H01L2224/45573 , H01L2224/45605 , H01L2224/45609 , H01L2224/45611 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45657 , H01L2224/4568 , H01L2224/45686 , H01L2224/45693 , H01L2224/45887 , H01L2224/45893 , H01L2224/48 , H01L2224/85207 , H01L2924/01015 , H01L2924/10253 , Y10T29/49117 , H01L2924/01074 , H01L2924/00014 , H01L2924/0132 , H01L2924/00 , H01L2924/013 , H01L2924/04642 , H01L2924/0503 , H01L2924/01005 , H01L2924/01006
Abstract: A wire structure, which may be configured for a semiconductor device, is disclosed. The wire may include an elongate flexible core formed of a conductor material and a cladding layer covering an outer surface of the core. The cladding layer may be a conductor. In various aspects the cladding layer and core have different grain sizes. An average grain size of the core material may be several orders of magnitude greater than an average grain size of the cladding layer material. The cladding layer may be an alloy having a varying concentration of a minor component across its thickness. Methods of forming a wire structure are also disclosed.
Abstract translation: 公开了一种可被配置用于半导体器件的导线结构。 线可以包括由导体材料形成的细长柔性芯和覆盖芯的外表面的覆层。 包层可以是导体。 在各个方面，包覆层和芯具有不同的晶粒尺寸。 核心材料的平均粒径可以比包覆层材料的平均粒径大几个数量级。 包覆层可以是在其厚度上具有不同浓度的次要组分的合金。 还公开了形成线结构的方法。
-
13.发明申请STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES WITH PLURAL ACTIVE CHIPS 有权堆叠式微电子组件与TSVS形成在一起的主动活动公开(公告)号：US20150333050A1
公开(公告)日：2015-11-19
申请号：US14811177
申请日：2015-07-28
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC: H01L25/00 , H01L23/00 , H01L21/768 , H01L25/065
CPC classification number: H01L25/00 , H01L21/76805 , H01L21/76898 , H01L23/3178 , H01L23/481 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/13025 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29188 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/73253 , H01L2224/83005 , H01L2224/9202 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/1032 , H01L2924/1037 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2224/83 , H01L2924/00
Abstract: A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.
Abstract translation: 提供了一种微电子组件，其中分别暴露在第一和第二微电子元件的前表面处的第一和第二导电焊盘并置，每个微电子元件体现有源半导体器件。 导电元件可以在从第一微电子元件的后表面延伸到其前表面的第一开口内延伸，在从第一开口朝向第一微电子元件的前表面延伸的第二开口内，并且在第三开口 延伸穿过第一和第二垫中的至少一个以接触第一和第二垫。 第一和第二开口的内表面可分别相对于第一微电子元件的前表面在第一和第二方向上延伸，以限定大致的角度。
-
14.发明授权Stacked microelectronic assembly with TSVS formed in stages with plural active chips 有权具有TSVS的堆叠微电子组件与多个有源芯片分阶段形成公开(公告)号：US09099296B2
公开(公告)日：2015-08-04
申请号：US14060997
申请日：2013-10-23
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
CPC classification number: H01L25/00 , H01L21/76805 , H01L21/76898 , H01L23/3178 , H01L23/481 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/13025 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29188 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/73253 , H01L2224/83005 , H01L2224/9202 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/1032 , H01L2924/1037 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2224/83 , H01L2924/00
Abstract: A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.
Abstract translation: 提供了一种微电子组件，其中分别暴露在第一和第二微电子元件的前表面处的第一和第二导电焊盘并置，每个微电子元件体现有源半导体器件。 导电元件可以在从第一微电子元件的后表面延伸到其前表面的第一开口内延伸，在从第一开口朝向第一微电子元件的前表面延伸的第二开口内，并且在第三开口 延伸穿过第一和第二垫中的至少一个以接触第一和第二垫。 第一和第二开口的内表面可分别相对于第一微电子元件的前表面在第一和第二方向上延伸，以限定大致的角度。
-
公开(公告)号：US20140210104A1
公开(公告)日：2014-07-31
申请号：US14243484
申请日：2014-04-02
Applicant: TESSERA, INC.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC: H01L23/522 , H01L23/00
CPC classification number: H01L21/76879 , H01L21/76802 , H01L21/76898 , H01L23/481 , H01L23/4985 , H01L23/5226 , H01L24/06 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00
Abstract: A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate.
Abstract translation: 提供了在基板上形成导电元件的方法和所得到的组件。 该方法包括在覆盖设置在基板上的电介质区域上的牺牲层中形成凹槽。 槽优选地沿着衬底的倾斜表面延伸。 牺牲层优选通过非光刻方法去除，例如用激光烧蚀，机械研磨或喷砂。 在沟槽中形成导电元件。 可以形成凹槽。 凹槽和导电元件可以沿着衬底的任何表面形成，包括在其中形成的沟槽和通孔内，并且可以连接到衬底的前表面和/或后表面上的导电焊盘。 导电元件优选通过电镀形成，并且可以或可以不与基板的表面一致。
-
Patent Agency Ranking
16.发明申请STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES WITH PLURAL ACTIVE CHIPS 有权堆叠式微电子组件与TSVS形成在一起的主动活动公开(公告)号：US20140048954A1
公开(公告)日：2014-02-20
申请号：US14060997
申请日：2013-10-23
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
IPC: H01L25/00
CPC classification number: H01L25/00 , H01L21/76805 , H01L21/76898 , H01L23/3178 , H01L23/481 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/13025 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29188 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/73253 , H01L2224/83005 , H01L2224/9202 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/1032 , H01L2924/1037 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2224/83 , H01L2924/00
Abstract: A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.
Abstract translation: 提供了一种微电子组件，其中分别暴露在第一和第二微电子元件的前表面处的第一和第二导电焊盘并置，每个微电子元件体现有源半导体器件。 导电元件可以在从第一微电子元件的后表面延伸到其前表面的第一开口内延伸，在从第一开口朝向第一微电子元件的前表面延伸的第二开口内，并且在第三开口 延伸穿过第一和第二垫中的至少一个以接触第一和第二垫。 第一和第二开口的内表面可分别相对于第一微电子元件的前表面在第一和第二方向上延伸，以限定大致的角度。
-
公开(公告)号：US20130341804A1
公开(公告)日：2013-12-26
申请号：US13939725
申请日：2013-07-11
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia , Craig Mitchell
IPC: H01L25/00
CPC classification number: H01L25/00 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04026 , H01L2224/05023 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05186 , H01L2224/0519 , H01L2224/05568 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/0613 , H01L2224/06131 , H01L2224/06135 , H01L2224/06505 , H01L2224/116 , H01L2224/13023 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/136 , H01L2224/16146 , H01L2224/16148 , H01L2224/16235 , H01L2224/16238 , H01L2224/276 , H01L2224/29023 , H01L2224/29082 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32148 , H01L2224/32238 , H01L2224/73103 , H01L2224/81191 , H01L2224/81193 , H01L2224/8123 , H01L2224/81815 , H01L2224/8183 , H01L2224/83191 , H01L2224/83193 , H01L2224/8323 , H01L2224/83815 , H01L2224/8383 , H01L2224/9202 , H01L2224/9221 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/0002 , H01L2924/01029 , H01L2924/09701 , H01L2924/14 , H01L2924/35 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2224/05552 , H01L2924/00012 , H01L2924/00
Abstract: Disclosed are a microelectronic assembly of two elements and a method of forming same. A microelectronic element includes a major surface, and a dielectric layer and at least one bond pad exposed at the major surface. The microelectronic element may contain a plurality of active circuit elements. A first metal layer is deposited overlying the at least one bond pad and the dielectric layer. A second element having a second metal layer deposited thereon is provided, and the first metal layer is joined with the second metal layer. The assembly may be severed along dicing lanes into individual units each including a chip.
Abstract translation: 公开了两种元件的微电子组件及其形成方法。 微电子元件包括主表面和介电层以及在主表面处暴露的至少一个接合焊盘。 微电子元件可以包含多个有源电路元件。 沉积第一金属层，覆盖至少一个接合焊盘和电介质层。 提供了具有沉积在其上的第二金属层的第二元件，并且第一金属层与第二金属层接合。 组件可以沿着切割通道切割成各自包括芯片的单元。
-
公开(公告)号：US09859220B2
公开(公告)日：2018-01-02
申请号：US15131966
申请日：2016-04-18
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Ilyas Mohammed , Craig Mitchell , Belgacem Haba , Piyush Savalia
IPC: H01L23/538 , H01L23/48 , H01L25/065 , H01L27/146 , H01L29/06 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/10
CPC classification number: H01L23/5384 , H01L23/3114 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L29/0657 , H01L2224/0237 , H01L2224/0401 , H01L2224/05552 , H01L2224/0557 , H01L2224/06181 , H01L2224/13024 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/73204 , H01L2224/81805 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/1058 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00
Abstract: A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity.
-
公开(公告)号：US20170256443A1
公开(公告)日：2017-09-07
申请号：US15600228
申请日：2017-05-19
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
IPC: H01L21/768 , H01L23/498
CPC classification number: H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/83
Abstract: A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.
-
公开(公告)号：US09659812B2
公开(公告)日：2017-05-23
申请号：US14708989
申请日：2015-05-11
Applicant: Tessera, Inc.
Inventor： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
IPC: H01L21/768 , H01L23/538 , H01L23/00 , H01L25/10 , H01L25/00 , H01L25/16 , H01L25/11 , H01L23/13 , H01L23/31 , H01L23/498
CPC classification number: H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/83
Abstract: A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.
-
-
-
-
-
-
-
-
-
Search Results
51
records
(took 0.017 seconds)
