公开(公告)号：US20230395371A1

公开(公告)日：2023-12-07

申请号：US18315066

申请日：2023-05-10

Applicant: Tokyo Electron Limited

Inventor： Kazumasa IGARASHI ,  Jun OGAWA ,  Yuki TANAKA

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/02321 ,  H01L21/3115 ,  H01L21/0234 ,  H01L21/67109 ,  H01L21/67017 ,  H01J37/32449 ,  H01J2237/2001 ,  H01J2237/338

Abstract: A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.

公开(公告)号：US20220328301A1

公开(公告)日：2022-10-13

申请号：US17808375

申请日：2022-06-23

Applicant: Tokyo Electron Limited

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01J37/32 ,  G03F7/40

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20180033618A1

公开(公告)日：2018-02-01

申请号：US15660563

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Kazuo YABE

IPC: H01L21/02 ,  H01J37/32 ,  H01J37/20 ,  H01L21/311

CPC classification number: H01L21/02315 ,  C23C16/345 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/20 ,  H01J37/32009 ,  H01J37/32532 ,  H01J2237/038 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116

Abstract: A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.

公开(公告)号：US20170218517A1

公开(公告)日：2017-08-03

申请号：US15420322

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: C23C16/511 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/45536 ,  H01J37/32192 ,  H01J37/32449

Abstract: A method of forming a nitride film in a fine recess formed in a surface of a substrate to be processed, by repeating a process, which includes adsorbing a film forming raw material gas onto the substrate and nitriding the adsorbed film forming raw material gas. The nitriding the adsorbed film forming raw material gas includes converting a NH3 gas as a nitriding gas, and an adsorption inhibiting gas for inhibiting adsorption of the NH3 gas into radicals and supplying the radicals onto the substrate.

公开(公告)号：US20150107517A1

公开(公告)日：2015-04-23

申请号：US14518151

申请日：2014-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Jun OGAWA ,  Akira SHIMIZU

IPC: C23C16/455 ,  C23C16/509

CPC classification number: C23C16/45582 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568

Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Abstract translation: 一种等离子体处理装置包括：等离子体生成室，其中产生等离子体活性物质;处理室，被配置为容纳沿垂直方向堆叠的处理目标物体;等离子体产生室中产生的等离子体活性物质被供给到处理室; 等离子体源气体供给管，其设置在等离子体产生室的内部并沿垂直方向延伸，等离子体源气体从等离子体源气体供给管的一端引入，并通过形成在等离子体源气体供给管中的气体排出孔排出 以及一对等离子体电极，被配置为对排放到等离子体产生室中的等离子体源气体施加电场。 放置在一对等离子体电极之间的放电区域的尺寸在垂直方向上变化。

公开(公告)号：US20240096595A1

公开(公告)日：2024-03-21

申请号：US18524767

申请日：2023-11-30

Applicant: Tokyo Electron Limited

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01J37/32091 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20230395368A1

公开(公告)日：2023-12-07

申请号：US18316692

申请日：2023-05-12

Applicant: Tokyo Electron Limited

Inventor： Kazumasa IGARASHI ,  Yamato TONEGAWA ,  Jun OGAWA ,  Yuki TANAKA

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0214 ,  H01L21/02233 ,  H01L21/31116

Abstract: A substrate processing method includes preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate; supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and etching the oxide film.

公开(公告)号：US20210095375A1

公开(公告)日：2021-04-01

申请号：US17027409

申请日：2020-09-21

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  C23C16/452

Abstract: A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

公开(公告)号：US20210057207A1

公开(公告)日：2021-02-25

申请号：US16992541

申请日：2020-08-13

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Noriaki FUKIAGE

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

公开(公告)号：US20210054502A1

公开(公告)日：2021-02-25

申请号：US16993432

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Shimon OTSUKI ,  Takeshi OYAMA ,  Ren MUKOUYAMA ,  Jun OGAWA ,  Noriaki FUKIAGE

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/52

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.