公开(公告)号：US09786502B2

公开(公告)日：2017-10-10

申请号：US15067157

申请日：2016-03-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

IPC: H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

公开(公告)号：US20170263454A1

公开(公告)日：2017-09-14

申请号：US15067157

申请日：2016-03-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

IPC: H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

公开(公告)号：US09466691B2

公开(公告)日：2016-10-11

申请号：US14541107

申请日：2014-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： I-Ming Tseng ,  Rai-Min Huang ,  Tong-Jyun Huang ,  Kuan-Hsien Li ,  Chen-Ming Huang

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L29/66537 ,  H01L21/26586 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.

Abstract translation: 鳍状结构及其形成方法，其中，所述方法包括在基板上形成翅片结构。 接下来，在衬底上形成绝缘层并围绕鳍结构，其中绝缘层覆盖翅片结构的底部以暴露从绝缘层突出的鳍结构的暴露部分。 然后，在翅片结构上形成缓冲层。 接下来，在形成绝缘层之后，执行阈值电压注入工艺以穿透缓冲层，以在鳍结构的暴露部分上形成第一掺杂区域。

公开(公告)号：US20160141387A1

公开(公告)日：2016-05-19

申请号：US14541107

申请日：2014-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： I-Ming Tseng ,  Rai-Min Huang ,  Tong-Jyun Huang ,  Kuan-Hsien Li ,  Chen-Ming Huang

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/311 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/66537 ,  H01L21/26586 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.

Abstract translation: 鳍状结构及其形成方法，其中，所述方法包括在基板上形成翅片结构。 接下来，在衬底上形成绝缘层并围绕鳍结构，其中绝缘层覆盖翅片结构的底部以暴露从绝缘层突出的鳍结构的暴露部分。 然后，在翅片结构上形成缓冲层。 接下来，在形成绝缘层之后，执行阈值电压注入工艺以穿透缓冲层，以在鳍结构的暴露部分上形成第一掺杂区域。

公开(公告)号：US08951884B1

公开(公告)日：2015-02-10

申请号：US14079648

申请日：2013-11-14

Applicant: United Microelectronics Corp.

Inventor： Hung-Lin Shih ,  Jei-Ming Chen ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Kuan-Hsien Li

IPC: H01L21/76 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/823431 ,  H01L21/823462 ,  H01L29/401

Abstract: A method for forming a FinFET structure includes providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively. A first oxide layer cover the first fin structure and the second fin structure. Next a first protective layer and a second protective layer are entirely formed on the substrate and the first oxide layer in sequence, the second protective layer within the first region is removed, and the first protective layer within the first region is then removed. Afterwards, the first oxide layer covering the first fin structure and the second protective layer within the second region are removed simultaneously, and a second oxide layer is formed to cover the first fin structure.

Abstract translation: 一种用于形成FinFET结构的方法包括提供衬底，第一区和限定在衬底上的第二区，分别在第一区和第二区内的衬底上设置第一鳍结构和第二鳍结构。 第一氧化物层覆盖第一鳍结构和第二鳍结构。 接下来，依次在基板和第一氧化物层上完全形成第一保护层和第二保护层，去除第一区域内的第二保护层，然后去除第一区域内的第一保护层。 之后，同时除去覆盖第二区域内的第一鳍结构和第二保护层的第一氧化物层，形成第二氧化物层以覆盖第一鳍结构。