公开(公告)号：US06504152B2

公开(公告)日：2003-01-07

申请号：US10005446

申请日：2001-12-03

Applicant: Thomas Hantschel ,  Wilfried Vandervorst

Inventor： Thomas Hantschel ,  Wilfried Vandervorst

IPC: G01N2300

CPC classification number: G01Q70/16 ,  G01Q70/10 ,  Y10S977/874

Abstract: A probe tip configuration, being part of a probe (FIG. 2) for use in a scanning proximity microscope, is disclosed, comprising a cantilever beam (1) and a probe tip. Said tip comprises a first portion of a tip (2) and at least one second portion of a tip (5). Said first portion of a tip is connected to said cantilever beam whereas said second portion of a tip is placed on said first portion of a tip. Cantilever beam, first portion of a tip and second portion(s) of a tip can be composed of different materials and can be isolated each from another which makes an easy adjustment of the maximum penetration depth of the tip possible without limiting the resolution and makes it also possible to detect more than one signal of a sample at the same time using one cantilever beam. Methods of making the probe tip configuration are further described.

Abstract translation: 公开了一种探针尖端配置，其是用于扫描接近显微镜的探针（图2）的一部分，其包括悬臂梁（1）和探针尖端。 所述尖端包括尖端（2）的第一部分和尖端（5）的至少一个第二部分。 尖端的所述第一部分连接到所述悬臂梁，而尖端的第二部分被放置在尖端的所述第一部分上。 悬臂梁，尖端的第一部分和尖端的第二部分可以由不同的材料组成，并且可以彼此隔离，这使得能够容易地调整尖端的最大穿透深度而不限制分辨率，并且使得 也可以使用一个悬臂梁同时检测样本的多于一个信号。 进一步描述制造探针尖端配置的方法。

公开(公告)号：US08211812B2

公开(公告)日：2012-07-03

申请号：US12104353

申请日：2008-04-16

Applicant: Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

Inventor： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/316 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.

Abstract translation: 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。

公开(公告)号：US20100171025A1

公开(公告)日：2010-07-08

申请号：US12574531

申请日：2009-10-06

Applicant: Anne S. Verhulst ,  Wilfried Vandervorst

Inventor： Anne S. Verhulst ,  Wilfried Vandervorst

IPC: H01L31/00 ,  B05D5/06

CPC classification number: H01L31/0352 ,  H01L31/09 ,  Y10S977/954

Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.

Abstract translation: 提供了一种基于细长纳米结构的波长敏感检测器，例如。 纳米线 细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。 细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极 。 添加电路以读取光电导体单元的电信号。 每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。 因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

公开(公告)号：US20090313730A1

公开(公告)日：2009-12-17

申请号：US12483160

申请日：2009-06-11

Applicant: Thomas Hantschel ,  Wilfried Vandervorst ,  Kai Arstila

Inventor： Thomas Hantschel ,  Wilfried Vandervorst ,  Kai Arstila

IPC: G12B21/08

CPC classification number: G01Q60/40 ,  G01Q60/30 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16

Abstract: An atomic force microscopy probe configuration and a method for manufacturing the same are disclosed. In one aspect, the probe configuration includes a cantilever, and a planar tip attached to the cantilever. The cantilever only partially overlaps the planar tip, and extends along a longitudinal direction thereof. The planar tip is of a two-dimensional geometry having at least one corner remote from the cantilever, which corner during use contacts a surface to be scanned.

Abstract translation: 公开了一种原子力显微镜探针结构及其制造方法。 在一个方面，探针配置包括悬臂和连接到悬臂的平面末端。 悬臂仅部分地与平坦的尖端重叠，并且沿其纵向方向延伸。 平面尖端是具有远离悬臂的至少一个角的二维几何形状，在使用过程中，该角接触待扫描的表面。

公开(公告)号：US06823723B2

公开(公告)日：2004-11-30

申请号：US10091226

申请日：2002-02-28

Applicant: Wilfried Vandervorst ,  Pierre Eyben

Inventor： Wilfried Vandervorst ,  Pierre Eyben

IPC: G01B528

CPC classification number: G01Q10/06 ,  Y10S977/85 ,  Y10S977/871

Abstract: The present invention is related to a method and apparatus for performing Atomic Force Microscopy. In the method of the invention, a force profile is defined, and a sample is scanned by the AFM probe in such a way that the force between the sample and the probe is changed according to said predefined profile. The invention is equally related to an apparatus with which to perform said method.

Abstract translation: 本发明涉及用于执行原子力显微镜的方法和装置。 在本发明的方法中，限定力分布，并且AFM探针以样品和探针之间的力根据所述预定义的轮廓改变样品来扫描样品。 本发明同样涉及用于执行所述方法的装置。

公开(公告)号：US08232517B2

公开(公告)日：2012-07-31

申请号：US12574531

申请日：2009-10-06

Applicant: Anne S. Verhulst ,  Wilfried Vandervorst

Inventor： Anne S. Verhulst ,  Wilfried Vandervorst

IPC: H01L31/00

CPC classification number: H01L31/0352 ,  H01L31/09 ,  Y10S977/954

Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.

Abstract translation: 提供了一种基于细长纳米结构的波长敏感检测器，例如。 纳米线 细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。 细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极 。 添加电路以读取光电导体单元的电信号。 每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。 因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

公开(公告)号：US20110097881A1

公开(公告)日：2011-04-28

申请号：US12910348

申请日：2010-10-22

Applicant: Wilfried Vandervorst ,  Gang Wang

Inventor： Wilfried Vandervorst ,  Gang Wang

IPC: H01L21/20

CPC classification number: H01L29/66795 ,  H01L29/785

Abstract: A method is presented for forming mono-crystalline germanium or silicon germanium in a trench. In an embodiment, the method comprises providing a substrate comprising at least one active region that is adjacent to two insulating regions, forming in the active region a trench having a width of less than 100 nm, and forming in the trench a fill layer at a temperature of less than 450° C. that comprises germanium or silicon germanium and substantially fills the trench. The method further comprises heating the fill layer to a temperature sufficient to substantially melt the fill layer and allowing re-crystallization of the substantially melted fill layer, thereby forming mono-crystalline germanium or silicon germanium in the trench. In an embodiment, the method further comprises forming a mono-crystalline germanium or silicon germanium fin by removing at least a portion of the insulating regions. The mono-crystalline fin may be comprised in a fin field-effect-transistor (finFET).

Abstract translation: 提出了在沟槽中形成单晶锗或硅锗的方法。 在一个实施例中，所述方法包括提供包括至少一个与两个绝缘区域相邻的有源区域的衬底，在有源区域中形成宽度小于100nm的沟槽，并且在沟槽中形成填充层 温度低于450℃，其包含锗或硅锗，并且基本上填充沟槽。 该方法还包括将填充层加热到足以基本上熔化填充层并允许基本上熔化的填充层重新结晶的温度，从而在沟槽中形成单晶锗或硅锗。 在一个实施例中，该方法还包括通过去除绝缘区域的至少一部分来形成单晶锗或硅锗翅片。 单晶鳍可以包括在鳍状场效应晶体管（finFET）中。

公开(公告)号：US20090266974A1

公开(公告)日：2009-10-29

申请号：US11475300

申请日：2006-06-26

Applicant: Anne Verhulst ,  Wilfried Vandervorst

Inventor： Anne Verhulst ,  Wilfried Vandervorst

IPC: H01L27/14

CPC classification number: H01L31/0352 ,  H01L31/09 ,  Y10S977/954

Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.

Abstract translation: 提供了一种基于细长纳米结构的波长敏感检测器，例如。 纳米线 细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。 细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极 。 添加电路以读取光电导体单元的电信号。 每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。 因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

公开(公告)号：US07598482B1

公开(公告)日：2009-10-06

申请号：US11475300

申请日：2006-06-26

Applicant: Anne S. Verhulst ,  Wilfried Vandervorst

Inventor： Anne S. Verhulst ,  Wilfried Vandervorst

IPC: H01L31/00

CPC classification number: H01L31/0352 ,  H01L31/09 ,  Y10S977/954

Abstract: A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.

Abstract translation: 提供了一种基于细长纳米结构的波长敏感检测器，例如。 纳米线 细长纳米结构相对于共同的基底是平行的，并且它们被分组成多个平行细长纳米结构的至少第一和第二单元。 细长纳米结构位于第一和第二电极之间，第一和第二电极分别位于基本上垂直于衬底平面的第一和第二平面中，由此相同光电导体单元中的所有细长纳米结构与相同的两个电极 。 添加电路以读取光电导体单元的电信号。 每个单元中细长纳米结构的电子状态密度是不同的，因为其制造细长纳米结构的材料是不同的，或者因为细长纳米结构的直径不同。 因此，每个单位的细长纳米结构对入射的光子给出不同的响应，使得可以用该器件导出波长特异性信息。

公开(公告)号：US06809317B2

公开(公告)日：2004-10-26

申请号：US10313945

申请日：2002-12-06

Applicant: Wilfried Vandervorst

Inventor： Wilfried Vandervorst

IPC: H01J4910

CPC classification number: H01J49/0463 ,  G01N1/32 ,  G01N19/06 ,  G01N23/2251 ,  G01N27/628

Abstract: The present invention is related to a method and apparatus for performing a surface analysis of a sample by mass spectrometry. According to one aspect of the invention, the ions necessary for the spectrometry are produced by a probe beam, which is preferably an electron beam, in combination with a gas mixture comprising at least a reactive gas component. Due to the interaction of the probe beam with the reactive gas and the surface atoms, reactions take place between the surface atoms and the reactive gas molecules, resulting in volatile compounds being released from the surface. One or more laser beams cause the ionization of these compounds, after which the resulting ions are accelerated towards a mass spectrometer. The method and apparatus allow an accurate depth profiling of a test sample to be performed.

Abstract translation: 本发明涉及通过质谱进行样品的表面分析的方法和装置。 根据本发明的一个方面，用于光谱测定所需的离子通过与优选为电子束的探针光束一起，与至少包含反应性气体组分的气体混合物组合产生。 由于探针与反应气体和表面原子的相互作用，反应发生在表面原子和反应性气体分子之间，导致挥发性化合物从表面释放。 一个或多个激光束引起这些化合物的电离，之后所得到的离子朝向质谱仪加速。 该方法和装置允许执行测试样品的准确的深度分布。