公开(公告)号：US08484761B2

公开(公告)日：2013-07-09

申请号：US12483160

申请日：2009-06-11

Applicant: Thomas Hantschel ,  Wilfried Vandervorst ,  Kai Arstila

Inventor： Thomas Hantschel ,  Wilfried Vandervorst ,  Kai Arstila

IPC: G01Q70/14

CPC classification number: G01Q60/40 ,  G01Q60/30 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16

Abstract: An atomic force microscopy probe configuration and a method for manufacturing the same are disclosed. In one aspect, the probe configuration includes a cantilever, and a planar tip attached to the cantilever. The cantilever only partially overlaps the planar tip, and extends along a longitudinal direction thereof. The planar tip is of a two-dimensional geometry having at least one corner remote from the cantilever, which corner during use contacts a surface to be scanned.

Abstract translation: 公开了一种原子力显微镜探针结构及其制造方法。 在一个方面，探针配置包括悬臂和连接到悬臂的平面末端。 悬臂仅部分地与平坦的尖端重叠，并且沿其纵向方向延伸。 平面尖端是具有远离悬臂的至少一个角的二维几何形状，在使用过程中，该角接触待扫描的表面。

公开(公告)号：US6091248A

公开(公告)日：2000-07-18

申请号：US32906

申请日：1998-03-02

Applicant: Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

Inventor： Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

IPC: G01Q70/14 ,  G01R1/067 ,  G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  G01K31/26 ,  H01J37/26

CPC classification number: G01R31/2648 ,  G01Q60/30 ,  G01R1/06711 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/014 ,  Y10S977/854

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract translation: 通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近显微镜将至少一个导体与半导体元件接触，同时在半导体元件中注入基本零电流的导体 测量导体中的电位，同时在半导体元件中与导体注入大致零电流，改变导体的位置，并重复测量和改变步骤。

公开(公告)号：US5369372A

公开(公告)日：1994-11-29

申请号：US838419

申请日：1992-03-09

Applicant: Wilfried Vandervorst ,  Marc Meuris

Inventor： Wilfried Vandervorst ,  Marc Meuris

IPC: G01Q60/16 ,  G01R27/00 ,  G01R27/20 ,  G01R31/26 ,  G01R27/08

CPC classification number: B82Y35/00 ,  G01R27/00 ,  G01R27/205 ,  G01R31/2648 ,  Y10S977/854

Abstract: A method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, wherein in order to bring the contact resistance between the conductors and the element to, to hold it at,a predetermined value during measuring, the conductors are held at a constant distance and/or under constant pressure relative to the semiconductor element.

Abstract translation: PCT No.PCT / EP91 / 01294 Sec。 371日期：1992年3月9日 102（e）1992年3月9日PCT PCT 1991年7月9日PCT公布。 出版物WO92 / 01233 日本1992年1月23日。一种用于测量放置在半导体元件上的两个或多个导体之间的电阻或电导率的方法，其中为了使导体和元件之间的接触电阻保持在 测量期间的预定值，导体相对于半导体元件保持恒定的距离和/或恒定的压力。

公开(公告)号：US06690008B2

公开(公告)日：2004-02-10

申请号：US09954681

申请日：2001-09-14

Applicant: Thomas Hantschel ,  Wilfried Vandervorst

Inventor： Thomas Hantschel ,  Wilfried Vandervorst

IPC: H01J3726

CPC classification number: G01Q60/40 ,  G01Q60/34 ,  G01Q60/38 ,  Y10S977/873

Abstract: An atomic force microscopy (AFM) probe and a method of manufacturing mounted probes for AFM applications. The method implements an optimized soldering procedure for mounting a probe to a holder chip. In one embodiment, a metallisation system of Ti:W+Ni+Au is applied with a SnBi58 solder paste in combination with a hotplate. The mechanical connection between the probe and holder chip is preferably rigid. The soldered probe is highly conductive and the probe-holder chip assembly shows clear resonance peaks in tapping mode AFM.

Abstract translation: 原子力显微镜（AFM）探针和制造用于AFM应用的安装探针的方法。 该方法实现了将探头安装到保持器芯片的优化焊接程序。 在一个实施例中，Ti：W + Ni + Au的金属化系统与SnBi58焊锡膏一起加热。 探针和保持器芯片之间的机械连接优选是刚性的。 焊接的探头是高导电性的，并且探头支架芯片组件在攻丝模式AFM中显示清晰的共振峰值。

公开(公告)号：US06328902B1

公开(公告)日：2001-12-11

申请号：US09134264

申请日：1998-08-14

Applicant: Thomas Hantschel ,  Wilfried Vandervorst

Inventor： Thomas Hantschel ,  Wilfried Vandervorst

IPC: H01L21302

CPC classification number: G01Q70/16 ,  G01Q70/10 ,  Y10S977/874

Abstract: A probe tip configuration, being part of a probe (FIG. 2) for use in a scanning proximity microscope, is disclosed, comprising a cantilever beam (1) and a probe tip. Said tip comprises a first portion of a tip (2) and at least one second portion of a tip (5). Said first portion of a tip is connected to said cantilever beam whereas said second portion of a tip is placed on said first portion of a tip. Cantilever beam, first portion of a tip and second portion(s) of a tip can be composed of different materials and can be isolated each from another which makes an easy adjustement of the maximum penetration depth of the tip possible without limiting the resolution and makes it also possible to detect more than one signal of a sample at the same time using one cantilever beam.

Abstract translation: 公开了一种探针尖端配置，其是用于扫描接近显微镜的探针（图2）的一部分，其包括悬臂梁（1）和探针尖端。 所述尖端包括尖端（2）的第一部分和尖端（5）的至少一个第二部分。 尖端的所述第一部分连接到所述悬臂梁，而尖端的第二部分被放置在尖端的所述第一部分上。 悬臂梁，尖端的第一部分和尖端的第二部分可以由不同的材料组成，并且可以彼此隔离，这使得可以容易地调整尖端的最大穿透深度而不限制分辨率，并且使得 也可以使用一个悬臂梁同时检测样本的多于一个信号。

公开(公告)号：US06201401B1

公开(公告)日：2001-03-13

申请号：US09197611

申请日：1998-11-23

Applicant: Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

Inventor： Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

IPC: G01R3126

CPC classification number: G01R31/2648 ,  G01Q60/30 ,  G01R29/12 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/014 ,  Y10S977/854 ,  H01L2924/00

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract translation: 通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近显微镜将至少一个导体与半导体元件接触，同时在半导体元件中注入基本零电流的导体 测量导体中的电位，同时在半导体元件中与导体注入大致零电流，改变导体的位置，并重复测量和改变步骤。

公开(公告)号：US5995912A

公开(公告)日：1999-11-30

申请号：US840390

申请日：1997-04-29

Applicant: Peter DeWolf ,  Trudo Clarysse ,  Wilfried Vandervorst

Inventor： Peter DeWolf ,  Trudo Clarysse ,  Wilfried Vandervorst

IPC: G01R31/26 ,  H01L21/66 ,  G01R27/02 ,  G01R27/08

CPC classification number: G01R31/2648 ,  H01L22/14

Abstract: A database method and method of using the database for determining the carrier concentration profile of a semiconductor, wherein the database includes a first set of first data, the first data being a correction factor; and a second set of second data, each of the second data including first and a second set of parameters, the first set of parameters characterizing the carrier concentration profile and the second set of parameters characterizing the measurement technique. Each data of the first set of first data is obtained from one data of the second set of data through simulation or calculation.

Abstract translation: 一种使用数据库确定半导体的载流子浓度分布的数据库方法和方法，其中所述数据库包括第一组第一数据，所述第一数据是校正因子; 和第二组第二数据，每个第二数据包括第一和第二组参数，表征载波浓度分布的第一组参数和表征测量技术的第二组参数。 通过模拟或计算从第二组数据的一个数据获得第一组第一数据的每个数据。

公开(公告)号：US20120080596A1

公开(公告)日：2012-04-05

申请号：US13227505

申请日：2011-09-08

Applicant: Wilfried Vandervorst

Inventor： Wilfried Vandervorst

IPC: H01J37/26

CPC classification number: H01J37/226 ,  H01J37/285 ,  H01J49/0004 ,  H01J2237/04 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/248 ,  H01J2237/2855

Abstract: A laser atom probe system and a method for analysing a specimen by laser atom probe tomography are disclosed. The system includes a specimen holder whereon a specimen to be analyzed may be mounted, the specimen having a tip shape. The system further includes a detector, an electrode arranged between the specimen holder and the detector, and a voltage source configured to apply a voltage difference between the specimen tip and the electrode. The system also includes at least one laser system configured to direct a laser beam laterally at the specimen tip and a tip shape monitoring means configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.

Abstract translation: 公开了一种激光原子探针系统和通过激光原子探针层析成像分析样品的方法。 该系统包括可以安装待分析样品的样品架，样品具有尖端形状。 所述系统还包括检测器，布置在所述检体保持器和检测器之间的电极，以及被配置为施加所述检测头和所述电极之间的电压差的电压源。 该系统还包括至少一个激光系统，其被配置为在激光束的侧面引导激光束，以及尖端形状监测装置，被配置为检测和监视尖端形状，和/或用于改变和/或控制一个或多个激光器 所述激光束的参数，以便维持，恢复或控制所述样品尖端形状。

公开(公告)号：US20080265380A1

公开(公告)日：2008-10-30

申请号：US12104353

申请日：2008-04-16

Applicant: Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

Inventor： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

IPC: H01L23/58 ,  H01L21/469

CPC classification number: H01L21/316 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.

Abstract translation: 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。

公开(公告)号：US07133128B2

公开(公告)日：2006-11-07

申请号：US10622084

申请日：2003-07-16

Applicant: Trudo Clarysse ,  Wilfried Vandervorst

Inventor： Trudo Clarysse ,  Wilfried Vandervorst

IPC: G01N21/00 ,  G01R31/302

CPC classification number: G01N21/636 ,  G01N21/1717 ,  G01N2021/1719

Abstract: One aspect of the invention discloses a method of determining the dopant profile of doped regions in a semiconductor substrate. A pump laser is used to create excess carriers in this semiconductor substrate. The excess carrier concentration will influence the reflection of a probe laser. From the reflected probe laser not only the bulk components but also the near-surface components are eliminated to only yield the bulk components.

Abstract translation: 本发明的一个方面公开了一种确定半导体衬底中掺杂区的掺杂物分布的方法。 泵激光器用于在该半导体衬底中产生过量的载流子。 过量的载流子浓度将影响探针激光的反射。 从反射的探针激光器不仅可以消除体积分量，而且消除近表面组分，仅产生大部分组分。