DISPLAY DEVICE
    11.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20070126338A1

    公开(公告)日:2007-06-07

    申请号:US11671302

    申请日:2007-02-05

    CPC classification number: H01J31/127 H01J1/316 H01J2201/306

    Abstract: A PED is constituted by arranging signal lines and scanning lines, in the form of a matrix, on the inner surface of a rear substrate and by forming PZT films, which are used as electron-emitting members, at the intersections of the signal lines and the scanning lines. When a voltage is applied between element electrodes connected to the lines, each PZT film emits an electron beam having a cross-section shape that depends on the shape of the PZT film.

    Abstract translation: PED是通过将矩阵形式的信号线和扫描线布置在后基板的内表面上,并且在信号线与信号线的交点处形成用作电子发射部件的PZT膜构成的, 扫描线。 当在连接到线路的元件电极之间施加电压时,每个PZT膜发射具有取决于PZT膜的形状的横截面形状的电子束。

    Dielectric device
    13.
    发明申请
    Dielectric device 审中-公开
    电介质器件

    公开(公告)号:US20060012282A1

    公开(公告)日:2006-01-19

    申请号:US11180297

    申请日:2005-07-13

    Abstract: A higher performance dielectric device is provided. An electron emitter applying the dielectric device according to the present invention includes an emitter formed of a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles, and plural dielectric particles of smaller particle size which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.

    Abstract translation: 提供了更高性能的电介质器件。 施加根据本发明的电介质器件的电子发射器包括由电介质形成的发射体,以及施加驱动电压以引起电子发射的上电极和下电极。 发射体包括填充在多个介电粒子之间的空间中的多个介电粒子和较小粒径的多个电介质粒子。 具有上述结构的发射体通过气溶胶沉积法或溶胶浸渍法形成。

    Ferroelectric electron beam source and method for generating electron beams
    14.
    发明申请
    Ferroelectric electron beam source and method for generating electron beams 审中-公开
    铁电电子束源及其产生电子束的方法

    公开(公告)号:US20050263808A1

    公开(公告)日:2005-12-01

    申请号:US11130528

    申请日:2005-05-16

    Applicant: Shinzo Morita

    Inventor: Shinzo Morita

    CPC classification number: H01J1/30 H01J2201/306

    Abstract: A comb-shaped electrode is formed on the main surface of a ferroelectric thin film and a planar electrode is formed on the rear surface of a ferroelectric thin film. Then, the property of the main surface of the ferroelectric thin film is converted into semi-conduction. Then, the assembly comprised of the ferroelectric thin film, the comb-shaped electrode and the planar electrode is disposed in a given atmosphere. Under this condition, a negative voltage is applied to the comb-shaped electrode to polarize the ferroelectric thin film, and a negative impulse voltage is applied to the planar electrode, thereby generating electron beams from the main surface of the ferroelectric thin film.

    Abstract translation: 在铁电薄膜的主表面上形成梳状电极,并且在铁电薄膜的后表面上形成平面电极。 然后,将铁电薄膜的主表面的性质转换成半导体。 然后,将铁电薄膜,梳状电极和平面电极组成的组件设置在给定的气氛中。 在这种条件下,向梳状电极施加负电压以极化铁电薄膜,并向平面电极施加负的脉冲电压,从而从铁电薄膜的主表面产生电子束。

    Cathode body, electron gun, and cathode ray tube employing a
ferroelectric emitter
    15.
    发明授权
    Cathode body, electron gun, and cathode ray tube employing a ferroelectric emitter 失效
    阴极体,电子枪和使用铁电发射体的阴极射线管

    公开(公告)号:US5874802A

    公开(公告)日:1999-02-23

    申请号:US777312

    申请日:1996-12-27

    CPC classification number: B82Y10/00 H01J1/312 H01J29/04 H01J2201/306

    Abstract: A cathode, an electron gun, and a cathode ray tube include a ferroelectric electron source. The cathode includes a substrate; a lower electrode layer on the substrate; a cathode layer, on the lower electrode layer, the cathode layer including a ferroelectric emitter; an upper electrode layer, on the ferroelectric cathode layer, the upper electrode layer having electron emitting regions comprising a plurality of electron emission holes for passing electrons emitted from the ferroelectric emitter; and a driving electrode layer, supported by the upper electrode layer, for controlling passage of electrons through the electron emitting regions in the upper electrode layer and the driving electrode layer.

    Abstract translation: 阴极,电子枪和阴极射线管包括铁电电子源。 阴极包括基板; 基底上的下电极层; 阴极层,在所述下电极层上,所述阴极层包括铁电发射体; 上电极层,在铁电阴极层上,具有电子发射区的上电极层包括用于使从铁电发射体发射的电子的多个电子发射孔; 以及由上电极层支撑的用于控制电子通过上电极层和驱动电极层中的电子发射区的驱动电极层。

    Method of forming pointed structures
    17.
    发明授权
    Method of forming pointed structures 有权
    形成尖结构的方法

    公开(公告)号:US07935297B2

    公开(公告)日:2011-05-03

    申请号:US11370396

    申请日:2006-03-06

    Applicant: Diane E. Pugel

    Inventor: Diane E. Pugel

    Abstract: A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

    Abstract translation: 形成尖锐结构阵列的方法包括将铁磁流体沉积在基底上,向铁磁流体施加磁场以产生阵列的表面突起,并固化表面突起以形成尖锐结构的阵列。 尖的结构可以具有从大约10nm到大约25μm的尖端半径。 表面突起的固化可以在约10摄氏度至约30摄氏度的温度下进行。

    Electron emission source, electron emission device using the same, and composition for the same
    18.
    发明授权
    Electron emission source, electron emission device using the same, and composition for the same 失效
    电子发射源,使用其的电子发射装置及其组合物

    公开(公告)号:US07795794B2

    公开(公告)日:2010-09-14

    申请号:US11589790

    申请日:2006-10-31

    CPC classification number: H01J1/304 H01J2201/30446 H01J2201/306 H01J2329/00

    Abstract: An electron emission device includes a first plate and a second plate spaced apart and facing each other, a first electrode having an electron emission source electrically coupled thereto, the electron emission source including a carbon-based material and a ferroelectric material, a second electrode disposed adjacent to the first electrode, and a phosphor layer disposed so as to receive electrons emitted by the electron emission source.

    Abstract translation: 电子发射装置包括第一板和间隔开并彼此面对的第二板,具有与其电耦合的电子发射源的第一电极,电子发射源包括碳基材料和铁电材料,第二电极设置 邻近第一电极,以及荧光体层,其设置成接收由电子发射源发射的电子。

    Electron emitter
    19.
    发明授权
    Electron emitter 有权
    电子发射体

    公开(公告)号:US07576479B2

    公开(公告)日:2009-08-18

    申请号:US11673769

    申请日:2007-02-12

    Abstract: Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

    Abstract translation: 提供了一种具有高耐久性的压电薄膜型电子发射体,其显示出抑制电子发射量的减少,但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底,下电极,发射极层和上电极。 上电极具有多个开口,并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时,电子在发射极部分积聚,然后电子朝向减压气氛发射。 发射极层包含主要组分(即铁电组合物)和附加组分。 附加成分含有高氧化数的过渡金属氧化物,其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

    Method of forming pointed structures
    20.
    发明申请
    Method of forming pointed structures 有权
    形成尖结构的方法

    公开(公告)号:US20060197052A1

    公开(公告)日:2006-09-07

    申请号:US11370396

    申请日:2006-03-06

    Applicant: Diane Pugel

    Inventor: Diane Pugel

    Abstract: A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

    Abstract translation: 形成尖锐结构阵列的方法包括将铁磁流体沉积在基底上,向铁磁流体施加磁场以产生阵列的表面突起,并固化表面突起以形成尖锐结构的阵列。 尖的结构可以具有从大约10nm到大约25μm的范围的尖端半径。 表面突起的固化可以在约10摄氏度至约30摄氏度的温度下进行。

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