公开(公告)号：US06376848B1

公开(公告)日：2002-04-23

申请号：US09559238

申请日：2000-04-26

Applicant: Hideyuki Minami

Inventor： Hideyuki Minami

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764

Abstract: Apparatus and methods are disclosed for performing charged-particle-beam (CPB) microlithography in which aberrations arising from increased magnitudes of beam deflection are suppressed by making respective corrections for stage-position control errors. A CPB microlithography apparatus includes an image-positioning deflector that imparts a magnitude of deflection to the patterned beam appropriate for correcting stage-position-control errors. The magnitudes of correction are recorded in a memory of a statistical computer for each subfield of the pattern. Upon performing an exposure of a specified range (e.g., stripe) of the pattern containing multiple subfields, the correction values are statistically processed and trends (e.g., shifts in a specific direction) are analyzed. When exposing the next stripe of the pattern, the position of the wafer stage is adjusted in anticipation of any trends in required corrections such that the amounts of deflection to be performed by the image-positioning deflector are as small as possible within a predetermined range.

Abstract translation: 公开了用于执行带电粒子束（CPB）微光刻的装置和方法，其中通过对级位置控制误差进行相应的校正来抑制通过增加的光束偏转幅度引起的像差。 CPB微光刻设备包括图像定位偏转器，其对适于校正级位置控制误差的图案化波束施加偏转的大小。 校正的大小被记录在该图案的每个子场的统计计算机的存储器中。 在执行包含多个子场的图案的指定范围（例如，条纹）的曝光时，统计处理校正值并分析趋势（例如，在特定方向上的偏移）。 当暴露图案的下一条纹时，预期晶片台的位置可以预期所需校正的任何趋势，使得由图像定位偏转器执行的偏转量在预定范围内尽可能小。

公开(公告)号：US06326629B1

公开(公告)日：2001-12-04

申请号：US09392685

申请日：1999-09-09

Applicant: Marcellinus P. C. M. Krijn

Inventor： Marcellinus P. C. M. Krijn

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: An object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The imaging system includes two quadrupoles, each of which coincides with one of the two round lenses (10, 12), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system remains telescopic to a high degree and the imaging remains stigmatic.

Abstract translation: 物体（14）通过旋转对称电子透镜（10,12）的伸缩系统成像在成像表面（16）上。 成像系统包括两个四极，每个四极都与两个圆形透镜（10,12）中的一个重合，使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统保持高度的伸缩性，并且成像仍然是肮脏的。

公开(公告)号：US06271531B1

公开(公告)日：2001-08-07

申请号：US09363886

申请日：1999-07-30

Applicant: Toshiya Yamaguchi

Inventor： Toshiya Yamaguchi

IPC: H01J37302

CPC classification number: H01J37/3026 ,  H01J2237/31764

Abstract: A wafer with a surface on which a to-be-exposed resist is applied is first placed in a predetermined position. The position of the wafer and an irradiation position of en electron beam to be irradiated for exposing the resist are both aligned. Next, a chip area is exposed by irradiating the electron beam onto the chip area of the wafer in which to-be-manufactured chips are formed. Now, a peripheral area, which is positioned at the periphery of the chip area and in which incomplete chips not to be manufactured are formed, is exposed with the electron beam while setting accuracy of the irradiation position of the electron beam and an exposure amount thereof lower and smaller than accuracy of the irradiation position and an exposure amount thereof when exposing the chip area. After the exposure, the wafer onto which the electron beam has been irradiated is removed from the predetermined position.

Abstract translation: 首先将其上涂有待曝光抗蚀剂的表面的晶片放置在预定位置。 晶片的位置和用于曝光抗蚀剂的被照射的电子束的照射位置都对准。 接下来，通过将电子束照射到其中形成有待制造的芯片的晶片的芯片区域上来暴露芯片区域。 现在，设置位于芯片区域的周边并且不形成不完全的芯片的外围区域，同时设定电子束的照射位置的精度和曝光量，同时用电子束曝光 低于和小于照射位置的准确度及曝光量时的曝光量。 曝光后，将电子束照射的晶片从规定位置除去。

公开(公告)号：US06222197B1

公开(公告)日：2001-04-24

申请号：US09138356

申请日：1998-08-21

Applicant: Shin-Ich Kojima

Inventor： Shin-Ich Kojima

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174

Abstract: Exposure methods are disclosed for high precision pattern transfer with reduced distortion using an evaluation mask containing distortion-measurement patterns. The distortion-measurement patterns are provided in multiple subfields on a mask, and images of the patterns are projected and exposed onto a wafer by sequentially irradiating the subfields. Distortions in the images are measured. These measurements are then used to correct distortions in subsequent images with a dynamic correcting system comprising focus-correction coils and astigmatism compensators. Additional methods and apparatus are provided in which simultaneous equations are solved to determine currents in focus-correction coils and astigmatism compensators.

Abstract translation: 公开了使用包含失真测量图案的评估掩模的具有减小的失真的高精度图案转印的曝光方法。 在掩模上的多个子场中提供失真测量图案，并且通过依次照射子场来将图案的图像投影并暴露在晶片上。 测量图像中的变形。 然后使用包括聚焦校正线圈和像散补偿器的动态校正系统来校正后续图像中的失真。 提供了附加的方法和装置，其中解决联立方程以确定聚焦校正线圈和像散补偿器中的电流。

公开(公告)号：US06188074B1

公开(公告)日：2001-02-13

申请号：US09209377

申请日：1998-12-10

Applicant: Takamasa Satoh ,  Soichiro Arai

Inventor： Takamasa Satoh ,  Soichiro Arai

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174

Abstract: A charged particle beam exposure apparatus of the BAA type is disclosed, which improves the transmission rate of at least a signal transmission path leading from a blanking aperture array (BAA) control circuit to at least a blanking electrode and has an increased BAA driving speed. The impedance of the signal transmission path leading from the driver of the BAA control circuit to the BAA electrode is rendered to coincide with the output impedance of the driver of the BAA control circuit. Further, an auxiliary transmission path is provided for leading the signal transmission path inside a column outside of the column, and terminates with a resistor having the same impedance with the transmission impedance, thereby matching the impedance of the signal transmission path.

Abstract translation: 公开了一种BAA型的带电粒子束曝光装置，其将至少从消隐孔阵列（BAA）控制电路引导到至少一个消隐电极的信号传输路径的传输速率提高，并且具有增加的BAA驱动速度。 从BAA控制电路的驱动器到BAA电极的信号传输路径的阻抗与BAA控制电路的驱动器的输出阻抗一致。 此外，提供辅助传输路径用于引导在列外的列内的信号传输路径，并且以与传输阻抗具有相同阻抗的电阻终止，从而匹配信号传输路径的阻抗。

公开(公告)号：US06737658B1

公开(公告)日：2004-05-18

申请号：US09669732

申请日：2000-09-26

Applicant: Tetsuro Nakasugi ,  Toru Koike

Inventor： Tetsuro Nakasugi ,  Toru Koike

IPC: H01J37302

CPC classification number: H01J37/28 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01J2237/2826

Abstract: A first beam radiation is effected by uniformly radiating an electron beam on a vicinity of an underlying mark formed on a sample. The underlying mark is formed of a material with an emission efficiency of secondary electrons different from that of the other part of the sample. Thus, a surface of the sample is charged. A second beam radiation is effected by radiating an electron beam under conditions different from those of the first beam radiation, thereby scanning the mark. Secondary electrons from the surface of the sample are detected to determined the mark position. On the basis of the mark position, an alignment exposure is effected.

Abstract translation: 通过在形成在样品上的下面标记的附近均匀地辐射电子束来实现第一光束辐射。 底层标记由具有不同于样品其他部分的二次电子的发射效率的材料形成。 因此，样品的表面被充电。 通过在与第一光束辐射不同的条件下辐射电子束来实现第二光束辐射，从而扫描标记。 检测来自样品表面的二次电子以确定标记位置。 基于标记位置，进行对准曝光。

公开(公告)号：US06674086B2

公开(公告)日：2004-01-06

申请号：US09265181

申请日：1999-03-09

Applicant: Masato Kamada ,  Haruo Yoda ,  Minoru Wakita ,  Hajime Kawano

Inventor： Masato Kamada ,  Haruo Yoda ,  Minoru Wakita ,  Hajime Kawano

IPC: H01J37302

CPC classification number: H01J37/3026 ,  H01J2237/3175

Abstract: The subject that should be solved in the present invention is to improve throughput of electron beam lithography apparatus or electron beam lithography system and lithography method used therefor. The electron beam lithography apparatus by the present invention comprises a lithography data generation part, an exposure map implementation part, and plurality of lithography data generation parts, thereby several exposure maps which are different in condition and type, are implemented in parallel. Moreover, the electron beam lithography apparatus by present invention has a construction to compare outputs from the lithography data generation parts. Moreover, the electron beam lithography system by present invention has a construction to use lithography data formed with the lithography data generation parts of one of the electron beam lithography apparatuses with other of the electron beam lithography apparatuses.

Abstract translation: 本发明中要解决的课题是提高电子束光刻装置或电子束光刻系统的生产率和用于其的光刻方法。 本发明的电子束光刻设备包括光刻数据生成部分，曝光图实现部分和多个光刻数据生成部分，从而并行地实现条件和类型不同的几个曝光图。 此外，本发明的电子束光刻装置具有比较光刻数据生成部的输出的结构。 此外，本发明的电子束光刻系统具有使用与电子束光刻设备中的其中一个电子束光刻设备的光刻数据生成部分形成的光刻数据的结构。

公开(公告)号：US06653644B1

公开(公告)日：2003-11-25

申请号：US09602460

申请日：2000-06-23

Applicant: Ken Nakajima

Inventor： Ken Nakajima

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31761 ,  H01J2237/31788 ,  H01J2237/31794

Abstract: In a pattern exposure method and apparatus for projecting a circuit pattern on a circuit member by an electron beam passing through a pattern exposure mask having a number of exposure regions separated from one another by a boundary region, the pattern exposure mask additionally includes a beam restraining area for restraining the electron beam scattered by the boundary region, so that the strength of the total background exposure is equalized.

Abstract translation: 在通过通过具有通过边界区域彼此分离的曝光区域的数目的图案曝光掩模的电子束将电路图案投影在电路构件上的图案曝光方法和装置中，图案曝光掩模还包括光束抑制 用于抑制由边界区域散射的电子束的区域，使得总背景曝光的强度相等。

公开(公告)号：US06624429B1

公开(公告)日：2003-09-23

申请号：US09662182

申请日：2000-09-14

Applicant: John Charles Wolfe ,  Paul Ruchhoeft

Inventor： John Charles Wolfe ,  Paul Ruchhoeft

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

Abstract: For producing an exposure pattern on a curved, in particular concave substrate field of a substrate which comprises a layer of resist material sensitive to exposure to an energetic radiation, in a pattern transfer system a wide, substantially parallel beam of said energetic radiation is produced, and by means of said beam a planar mask having a structure pattern, namely, a set of transparent windows to form a structured beam, is illuminated and the structure pattern is imaged onto the substrate by means of the structured beam, producing a pattern image, namely, a spatial distribution of irradiation over the substrate. The direction of incidence of said beam onto the mask is varied through a sequence of inclinations with respect to the normal axis to the mask, the sequence of inclinations being adapted to merge those exposure pattern components which result from neighboring windows of the structure pattern, the exposure with respect to the sequence of inclinations superposing into a spatial distribution of exposure dose on the substrate, said distribution exceeding the specific minimum exposure dose of said resist material within only one or more regions of the substrate field, said region(s) forming the exposure pattern. The center of curvature of the substrate field is positioned to align with the pattern center on the mask. The windows of the structure pattern are arranged in a manner that along each radius from the pattern center, the radial spacing of said windows decreases with increasing radius from the pattern center; preferably, the windows have uniform area.

Abstract translation: 为了在基板的弯曲的特别是凹面基板领域产生曝光图案，该基板包括对暴露于能量辐射敏感的抗蚀剂材料层，在图案转印系统中，产生所述能量辐射的宽的基本平行的光束， 并且借助于所述光束，照射具有结构图案的平面掩模，即形成结构光束的一组透明窗口，并且通过结构化光束将结构图案成像到衬底上，产生图案图像， 即基板上的照射的空间分布。 所述光束到掩模上的入射方向通过相对于垂直于掩模的轴线的倾斜序列而变化，倾斜序列适于合并由结构图案的相邻窗口产生的那些曝光图案部件， 相对于叠加在衬底上的曝光剂量的空间分布中的倾斜序列的曝光，所述分布超过仅在衬底场的一个或多个区域内的所述抗蚀剂材料的特定最小曝光剂量，所述区域形成 曝光模式 基板区域的曲率中心定位成与掩模上的图案中心对准。 结构图案的窗口以沿着图案中心的每个半径的方式布置，所述窗口的径向间距随着距图案中心的半径的增加而减小; 优选地，窗户具有均匀的面积。

公开(公告)号：US06515291B2

公开(公告)日：2003-02-04

申请号：US09768722

申请日：2001-01-25

Applicant: Hiroyuki Itoh

Inventor： Hiroyuki Itoh

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: It is an object of the present invention to reduce a number of deflection awaiting and a connection error between shots by scanning and exposing a formed beam having a large area. To achieve the object, a continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. According to this structure, the number of deflection awaiting and the connection error between shots are reduced and further, a high-speed and highly accurate drawing of a 45° slanted figure is made possible.