Technique for writing with a raster scanned beam
    1.
    发明授权
    Technique for writing with a raster scanned beam 失效
    用光栅扫描光束写入的技术

    公开(公告)号:US06828570B2

    公开(公告)日:2004-12-07

    申请号:US10114399

    申请日:2002-04-01

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174 H01J2237/31776

    Abstract: Provided is a technique for generating patterns with a raster scanned beam in a photolithographic system that employs a multiple blank position flash cycle. In accordance with one embodiment of the present invention, a beam creates a shadow of a first aperture that impinges upon a region of a stop, referred to as a first blank position. The beam is deflected so that the shadow of the first aperture moves along a first direction to a flash position, in which a portion thereof superimposes a second aperture located in the stop. To complete the flash cycle, the beam is deflected so that shadow of the first aperture impinges upon a second region of the stop, referred to as second blank position. As a result, during the flash cycle, the beam is deflected in one direction to impinge upon two different blank positions.

    Abstract translation: 提供了一种用于在采用多个空白位置闪光周期的光刻系统中用光栅扫描光束产生图案的技术。 根据本发明的一个实施例,光束产生撞击在被称为第一空白位置的停止区域上的第一孔的阴影。 光束被偏转,使得第一光圈的阴影沿着第一方向移动到闪光位置,在该闪光位置,其一部分叠加位于光阑中的第二孔。 为了完成闪光循环,光束被偏转,使得第一光圈的阴影撞击在停止的第二区域,称为第二空白位置。 结果,在闪光周期期间,光束在一个方向上偏转以撞击两个不同的空白位置。

    Electron beam exposure method and apparatus
    2.
    发明授权
    Electron beam exposure method and apparatus 失效
    电子束曝光方法及装置

    公开(公告)号:US06583430B1

    公开(公告)日:2003-06-24

    申请号:US09359370

    申请日:1999-07-23

    Applicant: Masato Muraki

    Inventor: Masato Muraki

    Abstract: Some of a plurality of alignment marks formed in advance on a substrate are selected, and the positions of the selected alignment marks are detected in turn. The layout regularity of a plurality of patterns on the substrate is determined on the basis of the design coordinate values and actually measured values of the alignment marks. A pattern is written on the patterns by moving a stage relative to the electron beam on the basis of the layout regularity of the plurality of patterns. During writing, one of the selected alignment marks is irradiated with an electron beam, and electrons reflected by the alignment mark are detected, thereby detecting the mark position. Any difference between this actually measured value and the previous actually measured value is calculated, and the relative position between the electron beam and stage is corrected based on this difference.

    Abstract translation: 选择在基板上预先形成的多个对准标记中的一些,并且依次检测所选择的对准标记的位置。 基于设计坐标值和对准标记的实际测量值来确定基板上的多个图案的布局规则性。 基于多个图案的布局规则性,通过相对于电子束移动台阶来将图案写入图案。 在写入期间,用电子束照射所选择的对准标记之一,并检测由对准标记反射的电子,从而检测标记位置。 计算该实际测量值与先前实际测量值之间的任何差异,并且基于该差异校正电子束和级之间的相对位置。

    Illumination system for electron beam lithography tool
    3.
    发明授权
    Illumination system for electron beam lithography tool 有权
    电子束光刻工具照明系统

    公开(公告)号:US06333508B1

    公开(公告)日:2001-12-25

    申请号:US09580530

    申请日:2000-05-30

    Abstract: A method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The quadrupole lens array may be three or more mesh grids or a combination of grids and continuous foils. The quadrupole lens array forms a multitude of microlenses resembling an optical “fly's eye” lens. The quadrupole lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.

    Abstract translation: 一种通过将四极透镜阵列放置在照明系统部件的漂移空间中来控制光束发射的方法和装置。 照明系统部件可以是可附接到电子枪的电子枪或衬管或漂移管。 四极透镜阵列可以是三个或更多个网格或网格和连续箔片的组合。 四极透镜阵列形成大量类似于光学“飞眼”透镜的微透镜。 四极透镜阵列将输入的固体电子束分裂成多个子束,使得输出光束发射不同于入射光束发射,而光束总电流保持不变。 该方法和装置允许对束电流和光束发射的独立控制,这在SCALPEL照明系统中是有益的。

    Electron beam drawing method in which cell projection manner and variably shaped beam manner are used in combination
    4.
    发明授权
    Electron beam drawing method in which cell projection manner and variably shaped beam manner are used in combination 失效
    组合使用单元投影方式和可变形波束方式的电子束绘制方法

    公开(公告)号:US06211528B1

    公开(公告)日:2001-04-03

    申请号:US09055755

    申请日:1998-04-07

    Applicant: Takao Tamura

    Inventor: Takao Tamura

    Abstract: Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.

    Abstract translation: 确定在抗蚀剂中绘制图案的图案区域是以单元投影方式绘制的第一区域或以可变形波束方式绘制的第二区域。 然后,如果图案区域是第一区域,则选择第一曝光剂量,如果图案区域是第二区域,则选择第二曝光剂量。 第二次接触剂量与第一次接触剂量不同。 该图案以第一区域中的第一曝光剂量和第二区域中的第二曝光剂量绘制。

    Variably shaped beam EB writing system
    5.
    发明授权
    Variably shaped beam EB writing system 失效
    可变形梁EB书写系统

    公开(公告)号:US06774380B2

    公开(公告)日:2004-08-10

    申请号:US10255580

    申请日:2002-09-27

    Applicant: Takayuki Abe

    Inventor: Takayuki Abe

    Abstract: A variably shaped beam EB writing system which draws a pattern, comprises a recognition module, an adjustment module, and a drawing module. The recognition module recognizes at least one of a first length unit to specify a pattern length and a first position unit to specify a position described to a pattern data. The adjustment module adjusts at least one of a second length unit to specify a pattern length which is drawn by the variably shaped beam EB writing system and a second position unit to specify a position thereof to a value of which at least one of the first length unit and the first position unit are divided by a natural number. The drawing module draws a predetermined pattern based on at least one of the second length unit and the second position unit adjusted by the adjustment module.

    Abstract translation: 绘制图案的可变形束EB写入系统包括识别模块,调整模块和绘图模块。 识别模块识别指定图案长度的第一长度单元中的至少一个以及指定对图案数据描述的位置的第一位置单元。 调整模块调整第二长度单元中的至少一个以指定由可变形束EB写入系统绘制的图案长度,以及第二位置单元,用于将其位置指定为第一长度中的至少一个 单位和第一位置单位除以自然数。 绘图模块基于由调整模块调整的第二长度单元和第二位置单元中的至少一个来绘制预定图案。

    Reticle and direct lithography writing strategy
    6.
    发明授权
    Reticle and direct lithography writing strategy 有权
    光栅和直接光刻写作策略

    公开(公告)号:US06605816B2

    公开(公告)日:2003-08-12

    申请号:US09992653

    申请日:2001-11-16

    Abstract: The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

    Abstract translation: 本发明涉及在制造半导体和其它器件时用作掩模的图案化掩模版的制备。 利用掩模上的掩模层上的抗蚀剂和转移层来描述方法和装置。 方法和装置在掩模和相移掩模中产生小的特征尺寸。 对于掩模描述的方法在许多情况下可适用于具有类似小特征的其它工件的直接写入,例如半导体,低温,磁性和光学微器件。

    Charged particle beam exposure method and charged particle beam exposure device
    7.
    发明授权
    Charged particle beam exposure method and charged particle beam exposure device 有权
    带电粒子束曝光方法和带电粒子束曝光装置

    公开(公告)号:US06350992B1

    公开(公告)日:2002-02-26

    申请号:US09520756

    申请日:2000-03-07

    CPC classification number: H01J37/3026 H01J2237/31769

    Abstract: The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of areas surrounding the area and the distance between areas; (c) generating a supplementary exposure pattern in the area when the corrected pattern density for the area is lower than a prescribed reference exposure density; and (d) exposing the material in accordance with exposure data comprising the supplementary exposure pattern data appended to the pattern data. A first invention comprises a step for further generating a supplementary exposure pattern in areas lying between pattern existing regions where the patterns are located, and having a pattern density higher than the reference exposure density, when the distance between the pattern existing regions is greater than a prescribed reference distance.

    Abstract translation: 本发明的基础是带电粒子束曝光方法,包括以下步骤:(a)在子场内产生多个区域; (b)确定每个区域内的图案密度,并且根据区域周围的区域的图案密度和区域之间的距离来校正图案密度; (c)当所述区域的校正图案密度低于规定的参考曝光浓度时,在所述区域中产生补充曝光图案; 和(d)根据包括附加到图案数据的补充曝光图案数据的曝光数据曝光该材料。 第一发明包括在图案存在区域之间的距离大于图形存在区域时,在图案存在区域之间的区域中进一步产生补充曝光图案并具有高于参考曝光浓度的图案密度的步骤 规定参考距离。

    Electron beam lithography system having variable writing speed
    8.
    发明授权
    Electron beam lithography system having variable writing speed 失效
    具有可变写入速度的电子束光刻系统

    公开(公告)号:US06288406B1

    公开(公告)日:2001-09-11

    申请号:US09262639

    申请日:1999-03-04

    CPC classification number: H01J37/3023 H01J2237/30488 H01J2237/3175

    Abstract: The approach taken to provide variable writing speeds consists of the following: (1) Software in the Job Control subsystem that Identifies the minimum and maximum valid writing speeds, given the resist sensitivity, maximum beam current density, and requested write address size. if the variable writing speed option is enabled, Job Control selects the maximum valid speed. (2) Software in the Pattern Data Conversion subsystem that determines the number of stripes of pattern figure data to combine into each output bitmap for the selected writing speed. (3) Hardware in the Timing Logic Board to clock bitmap data to the serializer at the desired frequency. (4) Logic in the Blanking device to synchronize its blanking frequency with the clock rate used by the Timing Logic

    Abstract translation: 提供可变写入速度的方法包括以下内容:(1)作业控制子系统中的软件,鉴于光刻胶敏感度,最大光束电流密度和所请求的写入地址大小,标识最小和最大有效写入速度。 如果启用了变量写入速度选项,则作业控制选择最大有效速度。 (2)模式数据转换子系统中的软件,用于根据所选择的写入速度确定要组合到每个输出位图中的图形数据数据的条带数。 (3)定时逻辑板中的硬件,以期望的频率将位图数据记录到串行器。 (4)消隐设备中的逻辑,用于将其消隐频率与定时逻辑使用的时钟速率同步

    Electron beam exposure apparatus
    9.
    发明授权
    Electron beam exposure apparatus 失效
    电子束曝光装置

    公开(公告)号:US06225637B1

    公开(公告)日:2001-05-01

    申请号:US08954520

    申请日:1997-10-20

    Abstract: An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer via a reduction electron optical system, irradiates collimated electron beams toward an aperture board having an arcuated aperture sandwiched between two arcs having, as the center, the axis of the reduction electron optical system, and exposes the wafer with electron beams having an arcuated sectional shape that have been transmitted through the aperture.

    Abstract translation: 一种用于通过还原电子光学系统将由电子束形成的图像投影到晶片上的电子束曝光装置,将准直的电子束照射到具有弧形孔的孔板,该弧形孔夹在两个弧之间,该弧之间以中心为中心 电子光学系统,并且使具有已经透过该孔的弧形截面形状的电子束曝光晶片。

    Charged-particle beam lithography apparatus and system capable of readily detecting abnormality in controlling on-off operation
    10.
    发明授权
    Charged-particle beam lithography apparatus and system capable of readily detecting abnormality in controlling on-off operation 失效
    带电粒子束光刻设备和系统,其能够容易地检测控制开关操作的异常

    公开(公告)号:US06399954B1

    公开(公告)日:2002-06-04

    申请号:US09241576

    申请日:1999-02-02

    Abstract: Disclosed is a charged-particle beam lithography apparatus capable of readily detecting an abnormality in controlling the on-off operation of a charged-particle beam. The charged-particle beam lithography apparatus consists of a charged-particle beam generator, a charged-particle beam reshaping unit, a charged-particle beam converging unit, a charged-particle beam deflecting unit, a blanking unit, a digital converting circuit, and a comparing circuit. The blanking unit produces a blanking signal used to control the on-off operation of a charged-particle beam according to exposure pattern data, and thus controls the on-off operation of the charged-particle beam. The digital converting circuit produces a blanking data signal that is a digital signal indicating a variation of the blanking signal. The comparing circuit compares the blanking data signal with the exposure pattern data. It is detected whether the on-off operation of the charged-particle beam is controlled according to the exposure pattern data.

    Abstract translation: 公开了一种能够容易地检测控制带电粒子束的开关动作的异常的带电粒子束光刻装置。 带电粒子束光刻设备由带电粒子束发生器,带电粒子束整形单元,带电粒子束会聚单元,带电粒子束偏转单元,消隐单元,数字转换电路和 比较电路。 消隐单元根据曝光图案数据产生用于控制带电粒子束的开 - 关操作的消隐信号,从而控制带电粒子束的开 - 关操作。 数字转换电路产生消隐数据信号,该消隐数据信号是指示消隐信号变化的数字信号。 比较电路将消隐数据信号与曝光图案数据进行比较。 检测根据曝光图案数据是否控制带电粒子束的开 - 关操作。

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