Abstract:
Provided is a technique for generating patterns with a raster scanned beam in a photolithographic system that employs a multiple blank position flash cycle. In accordance with one embodiment of the present invention, a beam creates a shadow of a first aperture that impinges upon a region of a stop, referred to as a first blank position. The beam is deflected so that the shadow of the first aperture moves along a first direction to a flash position, in which a portion thereof superimposes a second aperture located in the stop. To complete the flash cycle, the beam is deflected so that shadow of the first aperture impinges upon a second region of the stop, referred to as second blank position. As a result, during the flash cycle, the beam is deflected in one direction to impinge upon two different blank positions.
Abstract:
Some of a plurality of alignment marks formed in advance on a substrate are selected, and the positions of the selected alignment marks are detected in turn. The layout regularity of a plurality of patterns on the substrate is determined on the basis of the design coordinate values and actually measured values of the alignment marks. A pattern is written on the patterns by moving a stage relative to the electron beam on the basis of the layout regularity of the plurality of patterns. During writing, one of the selected alignment marks is irradiated with an electron beam, and electrons reflected by the alignment mark are detected, thereby detecting the mark position. Any difference between this actually measured value and the previous actually measured value is calculated, and the relative position between the electron beam and stage is corrected based on this difference.
Abstract:
A method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The quadrupole lens array may be three or more mesh grids or a combination of grids and continuous foils. The quadrupole lens array forms a multitude of microlenses resembling an optical “fly's eye” lens. The quadrupole lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.
Abstract:
Whether a pattern region in which a pattern is drawn in a resist is a first region to be drawn in a cell projection manner or a second region to be drawn in a variably shaped beam manner is decided. Then a first exposure dose is selected if the pattern region is the first region or a second exposure dose is selected if the pattern region is the second region. The second exposure dose is different from the first exposure dose. The pattern is drawn with the first exposure dose in the first region and with the second exposure dose in the second region respectively.
Abstract:
A variably shaped beam EB writing system which draws a pattern, comprises a recognition module, an adjustment module, and a drawing module. The recognition module recognizes at least one of a first length unit to specify a pattern length and a first position unit to specify a position described to a pattern data. The adjustment module adjusts at least one of a second length unit to specify a pattern length which is drawn by the variably shaped beam EB writing system and a second position unit to specify a position thereof to a value of which at least one of the first length unit and the first position unit are divided by a natural number. The drawing module draws a predetermined pattern based on at least one of the second length unit and the second position unit adjusted by the adjustment module.
Abstract:
The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.
Abstract:
The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of areas surrounding the area and the distance between areas; (c) generating a supplementary exposure pattern in the area when the corrected pattern density for the area is lower than a prescribed reference exposure density; and (d) exposing the material in accordance with exposure data comprising the supplementary exposure pattern data appended to the pattern data. A first invention comprises a step for further generating a supplementary exposure pattern in areas lying between pattern existing regions where the patterns are located, and having a pattern density higher than the reference exposure density, when the distance between the pattern existing regions is greater than a prescribed reference distance.
Abstract:
The approach taken to provide variable writing speeds consists of the following: (1) Software in the Job Control subsystem that Identifies the minimum and maximum valid writing speeds, given the resist sensitivity, maximum beam current density, and requested write address size. if the variable writing speed option is enabled, Job Control selects the maximum valid speed. (2) Software in the Pattern Data Conversion subsystem that determines the number of stripes of pattern figure data to combine into each output bitmap for the selected writing speed. (3) Hardware in the Timing Logic Board to clock bitmap data to the serializer at the desired frequency. (4) Logic in the Blanking device to synchronize its blanking frequency with the clock rate used by the Timing Logic
Abstract:
An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer via a reduction electron optical system, irradiates collimated electron beams toward an aperture board having an arcuated aperture sandwiched between two arcs having, as the center, the axis of the reduction electron optical system, and exposes the wafer with electron beams having an arcuated sectional shape that have been transmitted through the aperture.
Abstract:
Disclosed is a charged-particle beam lithography apparatus capable of readily detecting an abnormality in controlling the on-off operation of a charged-particle beam. The charged-particle beam lithography apparatus consists of a charged-particle beam generator, a charged-particle beam reshaping unit, a charged-particle beam converging unit, a charged-particle beam deflecting unit, a blanking unit, a digital converting circuit, and a comparing circuit. The blanking unit produces a blanking signal used to control the on-off operation of a charged-particle beam according to exposure pattern data, and thus controls the on-off operation of the charged-particle beam. The digital converting circuit produces a blanking data signal that is a digital signal indicating a variation of the blanking signal. The comparing circuit compares the blanking data signal with the exposure pattern data. It is detected whether the on-off operation of the charged-particle beam is controlled according to the exposure pattern data.