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    Dynamic access point based positioning
    202.
    发明授权
    Dynamic access point based positioning 有权
    动态接入点定位

    公开(公告)号：US09056767B2

    公开(公告)日：2015-06-16

    申请号：US13852073

    申请日：2013-03-28

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Deric Wayne Waters ,  Ariton E. Xhafa ,  Mohamed Farouk Mansour

    IPC: H04W24/00 ,  B81C1/00 ,  B81B7/00 ,  H04W4/02 ,  H01L21/02 ,  B81B3/00

    CPC classification number: B81C1/00984 ,  B81B3/0005 ,  B81B7/0032 ,  B81C1/00261 ,  B81C1/0096 ,  B81C2201/112 ,  H01L21/02112 ,  H04W4/02 ,  Y10S257/914

    Abstract: A wireless device that includes an access point (AP) scanner, a transceiver, and a controller coupled to the AP scanner and transceiver. The AP scanner is configured to scan wireless network channels utilized by one or more APs to transmit data packets, probe responses, and beacons. The transceiver is configured to transmit one or more probe requests to the one or more APs and receive one or more probe responses and beacons from the one or more APs. The controller is configured to determine a proximate geographic position of the wireless device based on signal strength of the one or more probe responses and beacons received from the one or more APs. The controller also dynamically adapts a parameter utilized in determining the proximate geographic position of the wireless device.

    Abstract translation: 一种包括接入点（AP）扫描器，收发器和耦合到AP扫描器和收发器的控制器的无线设备。 AP扫描器被配置为扫描由一个或多个AP使用的无线网络信道以发送数据分组，探测响应和信标。 收发器被配置为向一个或多个AP发送一个或多个探测请求，并从一个或多个AP接收一个或多个探测响应和信标。 控制器被配置为基于从一个或多个AP接收的一个或多个探测响应和信标的信号强度来确定无线设备的邻近地理位置。 控制器还动态地适配用于确定无线设备的最近地理位置的参数。

    REDUCING MEMS STICTION BY INTRODUCTION OF A CARBON BARRIER
    203.
    发明申请
    REDUCING MEMS STICTION BY INTRODUCTION OF A CARBON BARRIER 有权
    通过介绍碳障碍来减少MEMS的影响

    公开(公告)号：US20150054096A1

    公开(公告)日：2015-02-26

    申请号：US14529824

    申请日：2014-10-31

    Applicant: RUBEN B. MONTEZ ,  Robert F. Steimle

    Inventor： RUBEN B. MONTEZ ,  Robert F. Steimle

    IPC: B81B3/00

    CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

    Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

    Controlled Deposition of Metal and Metal Cluster Ions by Surface Field Patterning in Soft-Landing Devices
    204.
    发明申请
    Controlled Deposition of Metal and Metal Cluster Ions by Surface Field Patterning in Soft-Landing Devices 有权
    通过软着陆装置中的表面场图案控制金属和金属簇离子的沉积

    公开(公告)号：US20150045205A1

    公开(公告)日：2015-02-12

    申请号：US14077911

    申请日：2013-11-12

    Applicant: UNIVERSITY OF NORTH TEXAS

    Inventor： Guido Fridolin Verbeck, IV ,  Stephen Davila

    IPC: C23C14/22 ,  C23C14/04 ,  C23C14/12

    CPC classification number: C23C14/221 ,  B81C2201/112 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/28 ,  C23C14/54

    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.

    Abstract translation: 本文描述了使用激光烧蚀源将离子沉积到衬底上的软着陆（SL）仪器。 本发明的仪器设计有用于分离选定离子的定制漂移管和分离环离子光学器件。 漂移管允许通过与允许离子以低于1eV的能量降落到基底上的惰性浴气碰撞在激光烧蚀之后形成的离子的分离和热化。 分裂环离子光学器件能够将离子引向检测器或用于选定部件的着陆衬底。 本发明人进一步进行原子力显微镜（AFM）和漂移管测量以表征仪器的性能特征。

    REDUCING MICROELECTROMECHANICAL SYSTEMS STICTION BY FORMATION OF A SILICON CARBIDE LAYER
    205.
    发明申请
    REDUCING MICROELECTROMECHANICAL SYSTEMS STICTION BY FORMATION OF A SILICON CARBIDE LAYER 有权
    通过形成碳化硅层来减少微电子系统

    公开(公告)号：US20150021717A1

    公开(公告)日：2015-01-22

    申请号：US13946729

    申请日：2013-07-19

    Applicant: Michael D. Turner ,  Ruben B. Montez

    Inventor： Michael D. Turner ,  Ruben B. Montez

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/0038 ,  B81B3/0005 ,  B81C2201/112

    Abstract: A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can be coated, including those that are difficult to coat using standard self-assembled monolayer (SAM) processes (e.g., locations beneath the proof mass). Controlled processing parameters, such as temperature, length of time for annealing, and the like, provide for a near-uniform silicon carbide coating not provided by previous processes.

    Abstract translation: 提供了一种用于通过在制造期间使用的基于TEOS的氧化硅牺牲膜的碳在硅表面上形成近均匀碳化硅层来减少MEMS器件中的静摩擦的机构。 通过使用TEOS作为碳源来形成抗静电涂层，可以涂覆所有的硅表面，包括使用标准自组装单层（SAM）工艺（例如，证明质量下方的位置）难以涂覆的硅表面。 诸如温度，退火时间长度等受控加工参数提供了以前的方法未提供的近均匀的碳化硅涂层。

    Comb MEMS Device and Method of Making a Comb MEMS Device
    206.
    发明申请
    Comb MEMS Device and Method of Making a Comb MEMS Device 有权
    梳状MEMS器件和制造梳状MEMS器件的方法

    公开(公告)号：US20140197502A1

    公开(公告)日：2014-07-17

    申请号：US13743306

    申请日：2013-01-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： Alfons Dehe

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00968 ,  B81C2201/112

    Abstract: A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.

    Abstract translation: 公开了MEMS器件和制造MEMS器件的方法。 一个实施例包括在衬底的第一主表面中形成沟槽，通过在沟槽中形成导电材料形成导电指状物并从衬底的第二主表面形成开口，从而暴露导电指状物，第二主表面与第一主表面相反 主表面。

    WAFER-LEVEL PASSIVATION STRUCTURE OF MICRO-DEVICE, MICRO-DEVICE INCLUDING THE SAME, AND METHODS OF MANUFACTURING WAFER-LEVEL PASSIVATION STRUCTURE AND MICRO-DEVICE
    208.
    发明申请
    WAFER-LEVEL PASSIVATION STRUCTURE OF MICRO-DEVICE, MICRO-DEVICE INCLUDING THE SAME, AND METHODS OF MANUFACTURING WAFER-LEVEL PASSIVATION STRUCTURE AND MICRO-DEVICE 有权
    微型器件的水平钝化结构，包括其的微型器件以及制造水平钝化结构和微型器件的方法

    公开(公告)号：US20130052394A1

    公开(公告)日：2013-02-28

    申请号：US13562968

    申请日：2012-07-31

    Applicant: Jeong-yub Lee

    Inventor： Jeong-yub Lee

    IPC: B81B7/02 ,  B32B38/10 ,  B32B37/30 ,  G02B3/12 ,  B32B3/08

    CPC classification number: B81C1/00269 ,  B81C2201/112 ,  B81C2203/019 ,  B81C2203/036 ,  G02B3/12 ,  G02B26/0833 ,  Y10T428/23 ,  Y10T428/234

    Abstract: A wafer-level passivation structure of a micro-device, a micro-device including the same, and methods of manufacturing the wafer-level passivation structure and the micro-device may be provided. In particular, the passivation structure may include a spacer that is disposed on a substrate, covers a portion of the first surface, and has an elastic property, and an anti-adhesion layer that is disposed on a surface of the substrate between the spacer. The spacer may form a lattice pattern. The spacer may be formed of a silicon. The anti-adhesion layer may be a metallic film, an oxide film, or a nitride film.

    Abstract translation: 可以提供微器件的晶片级钝化结构，包括微晶器件的微器件以及制造晶片级钝化结构和微器件的方法。 特别地，钝化结构可以包括设置在基板上，覆盖第一表面的一部分并且具有弹性的间隔物，以及设置在间隔件之间的基板的表面上的防粘附层。 间隔物可以形成格子图案。 间隔物可以由硅形成。 抗粘附层可以是金属膜，氧化膜或氮化物膜。

    Electret condenser
    209.
    发明授权
    Electret condenser 失效
    驻极体冷凝器

    公开(公告)号：US08320589B2

    公开(公告)日：2012-11-27

    申请号：US12939748

    申请日：2010-11-04

    Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

    Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

    IPC: H04R25/00

    CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

    Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

    Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

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