CLATHRATE COMPOUND, EPOXY RESIN CURING AGENT, AND CURABLE RESIN COMPOSITION

    公开(公告)号:US20240409681A1

    公开(公告)日:2024-12-12

    申请号:US18698296

    申请日:2022-10-17

    Abstract: A clathrate compound obtained by mixing an imidazole compound (A) and a polyhydric phenol compound (B), wherein the clathrate compound has an average particle size (X) of 7 μm or less, and a maximum particle size (Y) of 40 μm or less. The imidazole compound (A) is preferably at least one selected from compounds represented by the following formula (1), where R1, R2, R3, and R4 each independently represent a hydrogen atom, an alkyl group that has 1 to 20 carbon atoms and may have a substituent, or an aryl group that has 6 to 20 carbon atoms and may have a substituent, and the substituent is at least one selected from a halogen atom, a hydroxy group, and a nitrile group.

    EPOXY RESIN COMPOSITION
    225.
    发明公开

    公开(公告)号:US20240301128A1

    公开(公告)日:2024-09-12

    申请号:US18565337

    申请日:2022-06-22

    CPC classification number: C08G59/223 C08G59/245 C08G59/50 C08G59/66

    Abstract: An epoxy material that provides a cured product having a reduced modulus of elasticity and thereby maintaining reliability even under conditions of wide environmental variation. The epoxy resin composition provided includes (A) an epoxy compound A of formula (1) below, (B) phenyl glycidyl ether substituted with a C6-20 hydrocarbon group, and (C) a curing agent. In formula (1), R1 and R2 each independently represent C2-4 alkylene; R3 represents methylene or —C(CH3)2—; and a and b each independently represent a number of 1 to 10.

    METHOD OF PRODUCING THIN-FILM
    230.
    发明公开

    公开(公告)号:US20240018655A1

    公开(公告)日:2024-01-18

    申请号:US18037206

    申请日:2021-11-16

    Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate:






    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

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