公开(公告)号：US07750535B2

公开(公告)日：2010-07-06

申请号：US11800294

申请日：2007-05-04

Applicant: Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

Inventor： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

IPC: H01L41/08 ,  H03H9/215

CPC classification number: H03H9/19 ,  H03H3/04 ,  H03H2003/0414 ,  H03H2009/241 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/49165

Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

Abstract translation: 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中，将石英基板接合到基底基板。 石英衬底被金属化，使得偏置电压被施加到谐振器，从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外，提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。

公开(公告)号：US20090189294A1

公开(公告)日：2009-07-30

申请号：US12399680

申请日：2009-03-06

Applicant: David T. CHANG ,  Randall L. KUBENA

Inventor： David T. CHANG ,  Randall L. KUBENA

IPC: H01L27/20 ,  H01L41/22 ,  H04R31/00 ,  H01L21/673

CPC classification number: H04R17/00 ,  H01L2924/0002 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/53178 ,  H01L2924/00

Abstract: Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

Abstract translation: 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片结合将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题，并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。

公开(公告)号：US07237315B2

公开(公告)日：2007-07-03

申请号：US10426931

申请日：2003-04-30

Applicant: Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

Inventor： Randall L. Kubena ,  David T. Chang ,  Jinsoo Kim

IPC: H04R31/00

CPC classification number: H03H9/19 ,  H03H3/04 ,  H03H2003/0414 ,  H03H2009/241 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/49165

Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

Abstract translation: 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中，将石英基板接合到基底基板。 石英衬底被金属化，使得偏置电压被施加到谐振器，从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外，提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。

公开(公告)号：US07202100B1

公开(公告)日：2007-04-10

申请号：US10933853

申请日：2004-09-03

Applicant: Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

Inventor： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

IPC: H01L21/00

CPC classification number: G01C19/5719

Abstract: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, attaching the resonator wafer to a base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer. The present invention relates further to a gyroscope containing an integrated post with on or off-chip electronics.

Abstract translation: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺仪的方法，该方法包括：将后晶片连接到共振器晶片，从后晶片形成底柱，附着于谐振晶片，将谐振晶片连接到基片 其中所述底柱装配到所述基底晶片中的柱孔中，从所述谐振器晶片形成顶部柱，其中所述底部和顶部柱围绕相同的轴线对称地形成，并且将盖子晶片附接在所述基底晶片的顶部上。 本发明还涉及一种包含具有片上或片外电子器件的集成柱的陀螺仪。

公开(公告)号：US07015060B1

公开(公告)日：2006-03-21

申请号：US11008721

申请日：2004-12-08

Applicant: Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

Inventor： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

IPC: H01L21/00

CPC classification number: G01C19/5719 ,  H01L21/76898

Abstract: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

Abstract translation: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法，其特征在于，包括：将后晶片连接到谐振晶片，从后晶片形成底柱，附着于谐振晶片，制备带晶圆的基晶片 互连，将谐振器晶片连接到基底晶片，其中底部支架装配到基底晶片中的柱孔中，从谐振器晶片形成顶部柱，其中底部和顶部柱围绕相同的轴线对称地形成，并且附接 在基底晶片顶部的盖子晶片。

公开(公告)号：US06835587B2

公开(公告)日：2004-12-28

申请号：US10639289

申请日：2003-08-11

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L2100

CPC classification number: B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

Abstract: A first axis MEM tunneling/capacitive sensor and method of making same. Cantilever beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arrange sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer.

Abstract translation: 第一轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一基板或晶片上，所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构，第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成，第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。

公开(公告)号：US08912711B1

公开(公告)日：2014-12-16

申请号：US12820761

申请日：2010-06-22

Applicant: David T. Chang ,  Tsung-Yuan Hsu

Inventor： David T. Chang ,  Tsung-Yuan Hsu

IPC: H01L41/053 ,  H03H9/02

CPC classification number: H03H9/02102 ,  H01P1/127 ,  H01P7/082 ,  H03H9/02377 ,  H03H9/19

Abstract: In an embodiment, a thermal stress resistant resonator is disclosed. The thermal stress resistant resonator may include or comprise a piezoelectric member having one or more non-linear piezoelectric support members extending there from.

Abstract translation: 在一个实施例中，公开了一种耐热应力谐振器。 耐热应力谐振器可以包括或包括具有从其延伸的一个或多个非线性压电支撑构件的压电构件。

公开(公告)号：US08242865B1

公开(公告)日：2012-08-14

申请号：US12352914

申请日：2009-01-13

Applicant: David T. Chang ,  Tsung-Yuan Hsu

Inventor： David T. Chang ,  Tsung-Yuan Hsu

IPC: H01H51/22

CPC classification number: H01H55/00

Abstract: A micromachined switch is provided including a base substrate, a bond pad on the base substrate, a cantilever arm connected to the bond pad, the cantilever arm having a conductive via from the bond pad, a first actuation electrode on the base substrate, and a second actuation electrode on the cantilever arm connected to the bond pad by way of the conductive via, positioned such that an actuation voltage applied between the first actuation electrode and the second actuation electrode will deform the cantilever arm, wherein the first actuation electrode is facing a side of the cantilever arm opposite the second actuation electrode.

Abstract translation: 提供一种微加工开关，包括基底基板，基底基板上的接合焊盘，连接到接合焊盘的悬臂，悬臂臂具有来自接合焊盘的导电通孔，基底基板上的第一致动电极和 悬臂上的第二致动电极通过导电通孔连接到接合焊盘，定位成使得施加在第一致动电极和第二致动电极之间的致动电压将使悬臂变形，其中第一致动电极面向 悬臂的一侧与第二致动电极相对。

公开(公告)号：US07994877B1

公开(公告)日：2011-08-09

申请号：US12268309

申请日：2008-11-10

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/15 ,  H03H9/54 ,  H03H7/00

CPC classification number: H03H9/542 ,  H03H9/0542

Abstract: An integrated Micro-Electro-Mechanical Systems (MEMS) filter includes an insulating substrate bonded to a base substrate such that at least a portion of the insulating substrate is separated from the base substrate by a gap, the insulating substrate having a first side and a second side, an inductive element having a coil, wherein the coil of the inductive element is on the insulating substrate, and a capacitive element having two conductive plates, wherein one of the two conductive plates is on the insulating substrate.

Abstract translation: 集成的微电子机械系统（MEMS）滤波器包括与基底基板接合的绝缘基板，使得绝缘基板的至少一部分通过间隙与基底基板分离，绝缘基板具有第一面和 第二侧，具有线圈的电感元件，其中电感元件的线圈在绝缘基板上，以及具有两个导电板的电容元件，其中两个导电板中的一个位于绝缘基板上。

公开(公告)号：US20100033062A1

公开(公告)日：2010-02-11

申请号：US12577420

申请日：2009-10-12

Applicant: David T. CHANG ,  Randall L. KUBENA ,  Frederic P. STRATTON ,  Pamela R. PATTERSON

Inventor： David T. CHANG ,  Randall L. KUBENA ,  Frederic P. STRATTON ,  Pamela R. PATTERSON

IPC: H01L41/04 ,  H01L41/053

CPC classification number: H04R31/00 ,  H04R19/005 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract translation: 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英 将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔 晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器 到基板接合焊盘，并且移除硅手柄。