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    Photosensitive element comprising a substrate and an alkaline soluble mixture
    22.
    发明授权
    Photosensitive element comprising a substrate and an alkaline soluble mixture 失效
    包含底物和碱溶性混合物的感光元件

    公开(公告)号：US4666820A

    公开(公告)日：1987-05-19

    申请号：US764612

    申请日：1985-08-12

    Applicant: Edwin A. Chandross ,  Elsa Reichmanis ,  Cletus W. Wilkins, Jr.

    Inventor： Edwin A. Chandross ,  Elsa Reichmanis ,  Cletus W. Wilkins, Jr.

    IPC: C07F7/18 ,  C07J51/00 ,  G03F7/004 ,  G03C1/76

    CPC classification number: G03F7/0045 ,  C07F7/1856 ,  C07J51/00

    Abstract: Photosensitive bodies that are sensitive to ultraviolet radiation and that exhibit excellent contrast are formed from base soluble polymers such as poly(methyl methacrylate-co-methacrylic acid) physically mixed with base insoluble materials such as o,o'-dinitrobenzyl esters. The base insoluble esters decompose upon irradiation to form base soluble entities in the irradiated regions. These irradiated portions are then soluble in basic solutions that are used to develop the desired image.

    Abstract translation: 对紫外线辐射敏感并且表现出优异对比度的感光体由基础可溶性聚合物形成，例如与基础不溶性物质如邻二甲基苄基酯物理混合的聚（甲基丙烯酸甲酯 - 共 - 甲基丙烯酸）。 碱不溶性酯在照射时分解，以在照射区域中形成碱可溶性物质。 然后这些照射的部分可溶于用于显影所需图像的碱性溶液中。

    Photosensitive element containing UV sensitive terpolymers
    23.
    发明授权
    Photosensitive element containing UV sensitive terpolymers 失效
    含有紫外线敏感三元共聚物的感光元件

    公开(公告)号：US4382120A

    公开(公告)日：1983-05-03

    申请号：US347483

    申请日：1982-02-10

    Applicant: Elsa Reichmanis ,  Cletus W. Wilkins, Jr.

    Inventor： Elsa Reichmanis ,  Cletus W. Wilkins, Jr.

    IPC: G03F7/039 ,  G03C1/68

    CPC classification number: G03F7/039 ,  Y10S522/91

    Abstract: A photolithographic resist with excellent sensitivity for actinic radiation in the short wavelength ultraviolet region is produced from terpolymers of (1) methyl methacrylate, (2) materials such as 3-oximino-2-butanone methacrylate, and (3) compounds such as methacrylonitrile.

    Abstract translation: 由（1）甲基丙烯酸甲酯，（2）诸如3-肟基-2-丁酮甲基丙烯酸酯的材料和（3）化合物如甲基丙烯腈的三元共聚物制备了在短波长紫外区域中具有优异的光化辐射灵敏度的光刻抗蚀剂。

    POLYMER FILM-PRODUCING METHODS AND DEVICES PRODUCED THEREFROM
    24.
    发明申请
    POLYMER FILM-PRODUCING METHODS AND DEVICES PRODUCED THEREFROM 有权
    聚合物膜生产方法和生产的装置

    公开(公告)号：US20120088901A1

    公开(公告)日：2012-04-12

    申请号：US13077896

    申请日：2011-03-31

    Applicant: Avishek Aiyar ,  Rakesh Nambiar ,  David Collard ,  Elsa Reichmanis

    Inventor： Avishek Aiyar ,  Rakesh Nambiar ,  David Collard ,  Elsa Reichmanis

    IPC: C08G75/06 ,  B06B1/00

    CPC classification number: H01B1/127 ,  C08G61/126 ,  C08G2261/3223 ,  C08J5/2256 ,  C08J2353/02 ,  H01L51/0037 ,  H01L51/007

    Abstract: Described herein are improved methods of forming polymer films, the polymer films formed thereby, and electronic devices formed form the polymer films. The methods generally include contacting a polymer with a solvent to at least partially solvate the polymer in the solvent, exposing the at least partially solvated polymer and solvent to ultrasonic energy for a duration effective to form a plurality of ordered assemblies of the polymer in the solvent, and forming a solid film of the polymer, wherein the solid film comprises the plurality of ordered assemblies of the polymer.

    Abstract translation: 本文描述了形成聚合物膜，由此形成的聚合物膜以及由聚合物膜形成的电子器件的改进方法。 方法通常包括使聚合物与溶剂接触以使溶剂中的聚合物至少部分溶剂化，将至少部分溶剂化的聚合物和溶剂暴露于超声波能量，持续时间有效地在溶剂中形成多个有序聚合物 ，并形成聚合物的固体膜，其中固体膜包含聚合物的多个有序组件。

    Patterned structures of high refractive index materials
    29.
    发明申请
    Patterned structures of high refractive index materials 审中-公开

    公开(公告)号：US20060099536A1

    公开(公告)日：2006-05-11

    申请号：US11316058

    申请日：2005-12-21

    Applicant: Elsa Reichmanis ,  Shu Yang

    Inventor： Elsa Reichmanis ,  Shu Yang

    IPC: G03F7/00

    CPC classification number: G03F7/2022 ,  G03F7/001 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/265 ,  G03F7/36

    Abstract: A process for forming a polymer template includes exposing a photoresist having polymer molecules to a light pattern and baking the photoresist to chemically react polymer molecules in portions of the photoresist that were exposed to light of the light pattern. The reacted polymer molecules have a different solubility in a solvent than chemically unreacted polymer molecules. The process also includes washing the baked photoresist with the solvent to produce a porous structure by selectively solvating one of the reacted polymer molecules and the unreacted polymer molecules. The porous structure can be used as template for forming porous structures of high refractive index materials.

    Semiconductor device having a low dielectric constant dielectric material and process for its manufacture
    30.
    发明授权
    Semiconductor device having a low dielectric constant dielectric material and process for its manufacture 失效
    具有低介电常数介电材料的半导体器件及其制造方法

    公开(公告)号：US06852648B2

    公开(公告)日：2005-02-08

    申请号：US10435561

    申请日：2003-05-09

    Applicant: Omkaram Nalamasu ,  Chien-Shing Pai ,  Elsa Reichmanis ,  Shu Yang

    Inventor： Omkaram Nalamasu ,  Chien-Shing Pai ,  Elsa Reichmanis ,  Shu Yang

    IPC: C08G77/442 ,  C08L71/02 ,  C09D183/04 ,  H01L21/312 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/02126 ,  C08G77/442 ,  C08G2650/58 ,  C08L71/02 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/7682 ,  Y10S438/96 ,  C08L83/00

    Abstract: A process for fabricating an integrated semiconductor device with a low dielectric constant material and an integrated semiconductor device with the low dielectric constant material interposed between two conductors is disclosed. The low dielectric constant material has a dielectric constant of less than about 2.8. The low dielectric constant material is a porous glass material with an average pore size of less than about 10 nm. The low dielectric constant material is formed on a semiconductor substrate with circuit lines thereover by combining an uncured and unmodified glass resin with an amphiphilic block copolymer. The amphiphilic block copolymer is miscible in the uncured glass resin. The mixture is applied onto the semiconductor substrate and the glass resin is cured. The glass resin is further processed to decompose or otherwise remove residual block copolymer from the cured glass resin.

    Abstract translation: 公开了一种制造具有低介电常数材料的集成半导体器件和介于两个导体之间的低介电常数材料的集成半导体器件的工艺。 低介电常数材料的介电常数小于约2.8。 低介电常数材料是平均孔径小于约10nm的多孔玻璃材料。 低介电常数材料通过将未固化和未改性的玻璃树脂与两亲性嵌段共聚物组合而形成在具有电路线的半导体衬底上。 两亲嵌段共聚物可与未固化的玻璃树脂混溶。 将混合物施加到半导体衬底上并使玻璃树脂固化。 进一步处理玻璃树脂以从固化的玻璃树脂中分解或以其它方式除去残留的嵌段共聚物。

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