Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
    22.
    发明申请
    Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same 审中-公开
    用于高频可调谐器件的高电平薄膜结构和高频可调谐器件

    公开(公告)号:US20070132065A1

    公开(公告)日:2007-06-14

    申请号:US11389761

    申请日:2006-03-27

    CPC classification number: H01G4/1227 H01G4/33 H01G7/06 H01L21/31691 H01L28/56

    Abstract: Provided are a paraelectric thin film structure and a high frequency tunable device with the paraelectric thin film structure. The paraelectric thin film structure has a large dielectric constant tuning rate and a low dielectric loss at a high frequency. The paraelectric thin film structure includes a perovskite ABO3 type paraelectric film formed on an oxide single crystal substrate. The paraelectric film is formed of a material selected from Ba(Zrx,Ti1-x)O3, Ba(Hfy,Ti1-y)O3, or Ba(Snz,Ti1-z)O3. Instead of the paraelectric film, the paraelectric thin film structure may include a compositionally graded paraelectric film having at least two paraelectric films formed of the selected material by varying the composition ratio x, y, or z. A high-frequency/phase tunable device employing the paraelectric thin film structure can have improved microwave characteristics and high-speed, low-power-consuming, low-cost characteristics.

    Abstract translation: 提供了顺电薄膜结构和具有顺电薄膜结构的高频可调谐器件。 顺电薄膜结构在高频下具有大的介电常数调谐率和低的介电损耗。 顺电薄膜结构包括在氧化物单晶衬底上形成的钙钛矿型ABO 3 N型顺电膜。 所述顺电膜由选自Ba(Zr 1 x 1,Ti 1-x O)O 3 3,Ba(HfO 3) Y 1,Y 1,Y 3,Z 3,Z a,Z z, 3> 3< 3> 代替顺电膜,顺电薄膜结构可以包括通过改变组成比x,y或z而具有由所选择的材料形成的至少两个顺电膜的组成分级的副电介质膜。 采用顺电薄膜结构的高频/相位可调谐装置可以具有改进的微波特性和高速,低功耗,低成本的特性。

    Magnetic access memory device using perpendicular magnetization and fabrication method thereof
    23.
    发明申请
    Magnetic access memory device using perpendicular magnetization and fabrication method thereof 审中-公开
    使用垂直磁化的磁存取存储器件及其制造方法

    公开(公告)号:US20070115715A1

    公开(公告)日:2007-05-24

    申请号:US11603463

    申请日:2006-11-22

    CPC classification number: G11C11/16 H01L43/08 H01L43/12

    Abstract: Provided are a magnetic random access memory (MRAM) device using perpendicular magnetization, capable of stably reducing a size of a magnetic domain, and a method of fabricating the magnetic random access memory device. The magnetic random access memory device includes at least two magnetic layers, a tunnel insulation layer, and an underlayer. Each of the two magnetic layers has a magnetic domain perpendicularly magnetized in a thickness direction. The magnetic random access memory device includes an underlayer located on one side of at least one magnetic layer, and including at least one element of elements forming at least one magnetic layer to induce exchange coupling with the magnetic layer.

    Abstract translation: 提供了使用能够稳定地减小磁畴尺寸的垂直磁化的磁性随机存取存储器(MRAM)装置,以及制造磁性随机存取存储器件的方法。 磁性随机存取存储器件包括至少两个磁性层,隧道绝缘层和底层。 两个磁性层中的每一个具有沿厚度方向垂直磁化的磁畴。 磁性随机存取存储器件包括位于至少一个磁性层的一侧的底层,并且包括形成至少一个磁性层的元件的至少一个元件,以引起与磁性层的交换耦合。

    Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same
    24.
    发明申请
    Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same 审中-公开
    使用绝缘体 - 半导体过渡材料层作为沟道材料的场效应晶体管及其制造方法

    公开(公告)号:US20060231872A1

    公开(公告)日:2006-10-19

    申请号:US10557552

    申请日:2003-12-30

    Abstract: Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.

    Abstract translation: 提供了包括绝缘体 - 半导体过渡材料层的场效应晶体管。 绝缘体 - 半导体过渡材料层选择性地提供第一状态,其中当不施加栅极场时,在绝缘体半导体转移材料层的表面上没有引入带电孔,并且第二状态引入大量带电孔 绝缘体 - 半导体过渡材料层的表面,当施加负电场时形成导电通道。 在绝缘体半导体过渡材料层上形成栅极绝缘层。 栅电极形成在栅极绝缘层上,以将预定强度的负电场施加到绝缘体 - 半导体转移材料层。 源电极和漏电极在绝缘体 - 半导体过渡材料层的两侧彼此面对设置,使得当绝缘体半导体转移材料层处于第二状态时,电荷载流子能够流过导电沟道。

    Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same
    25.
    发明申请
    Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same 失效
    铁电/顺电多层薄膜,其形成方法和使用其的高频可变装置

    公开(公告)号:US20060118843A1

    公开(公告)日:2006-06-08

    申请号:US11180744

    申请日:2005-07-12

    Abstract: A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.

    Abstract translation: 具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜,以克服介电常数的调谐率和铁电薄膜的介电损耗的限制,其形成方法和高 提供具有铁电/顺电多层薄膜的高频可变器件。 铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层和外延铁电(Ba x Sr Sr 1-x < / SUB>)TiO 3薄膜形成在顺电种子层上。 高频可变装置可以实现具有高速度,低功耗,低价格和优异的微波特性的RF频率/相位可变装置。

    Liquid crystal display device having photo-sensor and fabricating method and driving method thereof
    26.
    发明授权
    Liquid crystal display device having photo-sensor and fabricating method and driving method thereof 有权
    具有光传感器的液晶显示装置及其制造方法和驱动方法

    公开(公告)号:US07944429B2

    公开(公告)日:2011-05-17

    申请号:US11386773

    申请日:2006-03-23

    Abstract: A liquid crystal display device includes a liquid crystal panel divided into a non-display area and a display area where pixel cells are arranged in a matrix, a backlight for supplying light to the liquid crystal panel, and a photo-sensing device in the non-display area for sensing an external light to control light output from the backlight in accordance with the sensed the external light.

    Abstract translation: 液晶显示装置包括分为非显示区域的液晶面板和像素单元排列成矩阵的显示区域,用于向液晶面板供给光的背光源以及非液晶显示装置中的感光装置, - 用于感测外部光的显示区域,以根据感测到的外部光来控制从背光源输出的光。

    Liquid crystal display device and fabricating method thereof
    27.
    发明授权
    Liquid crystal display device and fabricating method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号:US07943405B2

    公开(公告)日:2011-05-17

    申请号:US12784002

    申请日:2010-05-20

    Abstract: A liquid crystal display panel and a fabricating method thereof comprising an image sensing capability, image scanning, and touch inputting. In the liquid crystal display device, a gate line and a data line are formed to intersect each other on a substrate to define a pixel area in which a pixel electrode is positioned. A first thin film transistor is positioned at an intersection area of the gate line and the data line. A sensor thin film transistor senses light having image information and supplied with a first driving voltage from the data line. A driving voltage supply line is positioned in parallel to the gate line to supply a second driving voltage to the sensor thin film transistor.

    Abstract translation: 一种液晶显示面板及其制造方法,包括图像感测能力,图像扫描和触摸输入。 在液晶显示装置中,形成栅极线和数据线,以在基板上彼此相交以限定像素电极所在的像素区域。 第一薄膜晶体管位于栅极线和数据线的交叉区域。 传感器薄膜晶体管感测具有图像信息的光并从数据线提供第一驱动电压。 驱动电压供给线与栅极线并联设置,以向传感器薄膜晶体管提供第二驱动电压。

    Divider apparatus and associated method
    28.
    发明授权
    Divider apparatus and associated method 有权
    分频器及相关方法

    公开(公告)号:US07415494B2

    公开(公告)日:2008-08-19

    申请号:US10407148

    申请日:2003-04-03

    CPC classification number: G06F7/535 G06F2207/5353

    Abstract: A method of dividing, in a micro computer unit (MCU), a first binary number (N), having a first number of significant bits, by a second binary number (D), having a second number of significant bits, produces an integer result (Y). The method includes: determining the difference (K) between the first and second numbers of significant bits; aligning the most significant bits (MSBs) of N and D by shifting the bits of D, by K bit positions, such that its MSB occupies the same relative bit position as the MSB of N; repeating K times: multiplying Y by 2; dividing D by 2; and, if N is greater than or equal to D: increasing Y by 1; setting N equal to N−D.

    Abstract translation: 一种在微计算机单元(MCU)中划分具有第二数目有效位的具有第二数目的有效位的第二二进制数(D)的具有第二数目的有效位的第一二进制数(N)产生一个整数 结果(Y)。 该方法包括:确定第一和第二有效位数之间的差(K); 通过将D的位移位K位位置来对齐N和D的最高有效位(MSB),使得其MSB占据与N的MSB相同的相对位位置; 重复K次:将Y乘以2; 将D除以2; 并且如果N大于或等于D:将Y增加1; 设置N等于N-D。

    Dynamically discovering subscriptions for publications
    29.
    发明申请
    Dynamically discovering subscriptions for publications 审中-公开
    动态发现出版物的订阅

    公开(公告)号:US20070174232A1

    公开(公告)日:2007-07-26

    申请号:US11327578

    申请日:2006-01-06

    CPC classification number: H04L51/00

    Abstract: A method, apparatus and computer-usable medium for using wildcards in a JMS Topic name. The method includes the steps of sending to a Java Naming and Directory Interface (JNDI) a storage message for messages that are identified by an identifier that includes a topic stock identifier and a topic wildcard indicator; and sending an implementation message from the JNDI to a middleware instructing the middleware to store new messages in any topic having the topic stock identifier. The implementation message causes the middleware to create a special topic that includes the topic stock identifier and the topic wildcard indicator, a query of all topics that include the topic stock identifier, and a generation of a reusable dynamic message flow instruction to a broker to direct future new messages from a publisher to all topics having the topic stock identifier.

    Abstract translation: 用于在JMS主题名称中使用通配符的方法,设备和计算机可用介质。 该方法包括以下步骤:向包含主题库标识符和主题通配符指示符的标识符标识的消息发送到Java命名和目录接口(JNDI)存储消息; 并将实现消息从JNDI发送到指示中间件的中间件,以在具有主题库存标识符的任何主题中存储新消息。 实现消息导致中间件创建一个特殊主题,其中包括主题库存标识符和主题通配符指示符,包括主题库存标识符的所有主题的查询,以及生成可重用动态消息流指令, 从发布商到具有主题库存标识符的所有主题的未来新消息。

    Liquid crystal display device and method for driving the same
    30.
    发明申请
    Liquid crystal display device and method for driving the same 有权
    液晶显示装置及其驱动方法

    公开(公告)号:US20070153157A1

    公开(公告)日:2007-07-05

    申请号:US11638386

    申请日:2006-12-14

    Abstract: A liquid crystal display device includes a liquid crystal display panel, a backlight unit, a first sensor, and a second sensor. The liquid crystal display panel includes a first substrate divided into a display region and a non-display region including a first region and a second region, a liquid crystal layer, and a second substrate. The backlight unit is disposed opposite a surface of the first substrate to emit light onto the liquid crystal display panel. The first sensor is disposed in the first region to sense ambient light, and the second sensor is disposed in the second region to sense light emitted from the backlight unit.

    Abstract translation: 液晶显示装置包括液晶显示面板,背光单元,第一传感器和第二传感器。 液晶显示面板包括分为显示区域的第一基板和包括第一区域和第二区域的非显示区域,液晶层和第二基板。 背光单元与第一基板的表面相对设置,以将光发射到液晶显示面板上。 第一传感器设置在第一区域中以感测环境光,并且第二传感器设置在第二区域中以感测从背光单元发射的光。

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