Abstract:
A liquid crystal display device includes a gate line and a data line intersecting each other on a substrate. The liquid crystal display device further includes a photo sensing device and a first thin film transistor (“TFT”) located at an intersection area of the gate line. The photo sensing device operates to sense an ambient light and includes a storage capacitor to store charge generated by light. The photo sensing device is drive by a driving voltage other than the data voltage.
Abstract:
Provided are a paraelectric thin film structure and a high frequency tunable device with the paraelectric thin film structure. The paraelectric thin film structure has a large dielectric constant tuning rate and a low dielectric loss at a high frequency. The paraelectric thin film structure includes a perovskite ABO3 type paraelectric film formed on an oxide single crystal substrate. The paraelectric film is formed of a material selected from Ba(Zrx,Ti1-x)O3, Ba(Hfy,Ti1-y)O3, or Ba(Snz,Ti1-z)O3. Instead of the paraelectric film, the paraelectric thin film structure may include a compositionally graded paraelectric film having at least two paraelectric films formed of the selected material by varying the composition ratio x, y, or z. A high-frequency/phase tunable device employing the paraelectric thin film structure can have improved microwave characteristics and high-speed, low-power-consuming, low-cost characteristics.
Abstract:
Provided are a magnetic random access memory (MRAM) device using perpendicular magnetization, capable of stably reducing a size of a magnetic domain, and a method of fabricating the magnetic random access memory device. The magnetic random access memory device includes at least two magnetic layers, a tunnel insulation layer, and an underlayer. Each of the two magnetic layers has a magnetic domain perpendicularly magnetized in a thickness direction. The magnetic random access memory device includes an underlayer located on one side of at least one magnetic layer, and including at least one element of elements forming at least one magnetic layer to induce exchange coupling with the magnetic layer.
Abstract:
Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.
Abstract:
A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
Abstract translation:具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜,以克服介电常数的调谐率和铁电薄膜的介电损耗的限制,其形成方法和高 提供具有铁电/顺电多层薄膜的高频可变器件。 铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层和外延铁电(Ba x Sr Sr 1-x < / SUB>)TiO 3薄膜形成在顺电种子层上。 高频可变装置可以实现具有高速度,低功耗,低价格和优异的微波特性的RF频率/相位可变装置。
Abstract:
A liquid crystal display device includes a liquid crystal panel divided into a non-display area and a display area where pixel cells are arranged in a matrix, a backlight for supplying light to the liquid crystal panel, and a photo-sensing device in the non-display area for sensing an external light to control light output from the backlight in accordance with the sensed the external light.
Abstract:
A liquid crystal display panel and a fabricating method thereof comprising an image sensing capability, image scanning, and touch inputting. In the liquid crystal display device, a gate line and a data line are formed to intersect each other on a substrate to define a pixel area in which a pixel electrode is positioned. A first thin film transistor is positioned at an intersection area of the gate line and the data line. A sensor thin film transistor senses light having image information and supplied with a first driving voltage from the data line. A driving voltage supply line is positioned in parallel to the gate line to supply a second driving voltage to the sensor thin film transistor.
Abstract:
A method of dividing, in a micro computer unit (MCU), a first binary number (N), having a first number of significant bits, by a second binary number (D), having a second number of significant bits, produces an integer result (Y). The method includes: determining the difference (K) between the first and second numbers of significant bits; aligning the most significant bits (MSBs) of N and D by shifting the bits of D, by K bit positions, such that its MSB occupies the same relative bit position as the MSB of N; repeating K times: multiplying Y by 2; dividing D by 2; and, if N is greater than or equal to D: increasing Y by 1; setting N equal to N−D.
Abstract:
A method, apparatus and computer-usable medium for using wildcards in a JMS Topic name. The method includes the steps of sending to a Java Naming and Directory Interface (JNDI) a storage message for messages that are identified by an identifier that includes a topic stock identifier and a topic wildcard indicator; and sending an implementation message from the JNDI to a middleware instructing the middleware to store new messages in any topic having the topic stock identifier. The implementation message causes the middleware to create a special topic that includes the topic stock identifier and the topic wildcard indicator, a query of all topics that include the topic stock identifier, and a generation of a reusable dynamic message flow instruction to a broker to direct future new messages from a publisher to all topics having the topic stock identifier.
Abstract:
A liquid crystal display device includes a liquid crystal display panel, a backlight unit, a first sensor, and a second sensor. The liquid crystal display panel includes a first substrate divided into a display region and a non-display region including a first region and a second region, a liquid crystal layer, and a second substrate. The backlight unit is disposed opposite a surface of the first substrate to emit light onto the liquid crystal display panel. The first sensor is disposed in the first region to sense ambient light, and the second sensor is disposed in the second region to sense light emitted from the backlight unit.