Abstract:
A correction method according to an embodiment includes illuminating an object to be inspected by using critical illumination by illumination light L11 generated by a light source 11, concentrating light from the object to be inspected illuminated by the illumination light L11 and acquiring image data of the object to be inspected by detecting the concentrated light by a first detector 23, concentrating part of the illumination light L11, and acquiring image data of a brightness distribution of the illumination light L11 by detecting the concentrated illumination light L11 by a second detector 33, and correcting the image data of the object to be inspected based on the image data of the brightness distribution.
Abstract:
A mask inspection apparatus according to the present disclosure includes: a field stop unit capable of switching between a field stop for an optical mask configured to emit an incident illumination light while maintaining the polarization state thereof and a field stop for an EUV mask configured to change the polarization state of a part of the incident illumination light and to cause an illumination light including an S-polarized light and a P-polarized light; a beam splitter unit capable of switching between a PBS for an optical mask and a non-polarized BS; an objective lens configured to collect an illumination light reflected in the beam splitter unit in a mask to be inspected and collect a reflected light obtained by reflecting an illumination light in the mask to be inspected; and a λ/4 plate that can be provided in an optical path of an illumination light and a reflected light.
Abstract:
An inspection apparatus according to an aspect of the present invention includes an EUV light source 11, an illumination optical system 10 provided to apply the EUV light to an EUV mask 60, a concave mirror and a convex mirror 22 configured to reflect the EUV light reflected on the EUV mask 60, a camera 32 configured to detect EUV light reflected on the convex mirror 22 and thereby take an image of the EUV mask 60, an AF light source 16 configured to generate AF light having a wavelength of 450 nm to 650 nm, first and second detectors 27 and 30 configured to detect the AF light reflected on the EUV mask 60 through the concave mirror with the hole 21 and the convex mirror 22, and an processing device 31 configured to adjust a focus point of the EUV light on the EUV mask 60.
Abstract:
A laser light source device having a simple configuration and an inspection device are provided. A laser light source device 200 according to an exemplary embodiment in accordance with the present invention has a repetition frequency of 1 MHz or higher, and includes fundamental wave generation means 201 for oscillating laser light including a fundamental wave with its center wavelength being included in one of first to fourth wavelength bands, and means 205 for generating a sixth harmonic of pulsed laser light extracted from the fundamental wave generation means 201. The first wavelength band is 1064.326 nm to 1064.511 nm. The second wavelength band is 1064.757 nm to 1064.852 nm. The third wavelength band is 1063.805 nm to 1063.878 nm. Further, the fourth wavelength band is 1063.962 nm to 1064.031 nm.
Abstract:
Provided are a light source apparatus and an inspection apparatus that can stably output a wavelength converted light beam. A light source apparatus includes a laser light source that generates a first fundamental light beam, at least one nonlinear optical crystal that generates a wavelength converted light beam using the fundamental light beam or a harmonic laser beam of the fundamental light beam as an incident light beam, a detector that detects the wavelength converted light beam, an acousto-optic modulator that is disposed in an optical path of the incident light beam in such a way that a zero-order light beam enters the nonlinear optical crystal, and a controller that controls an output intensity of the wavelength converted light beam according to a detection signal from the detector.
Abstract:
A defect coordinates measurement method includes a step of detecting detected coordinates of a fiducial mark and a defect of a mask blank placed on support pins, a step of detecting detected coordinates of the alignment mark of a reference mask placed on the support pins, a step of extracting a reference mark near the detected coordinates of the defect among the plurality of reference marks based on the detected coordinates of the defect of the mask blank and the alignment mark of the reference mask, a step of detecting detected coordinates of the extracted reference mark, and a step of calculating coordinates of the defect based on the detected coordinates of the reference mark and the detected coordinates of the defect.
Abstract:
Provided are a defect classifying method and an inspection apparatus which are capable of classifying a defect by distinguishing a basal plane dislocation, which is a killer defect in bipolar high-voltage elements, from other defects. The defect classifying method according to the present invention includes: projecting an illumination beam toward a silicon carbide substrate and forming a reflection image and a photoluminescence image; a first inspection step of detecting a defect image from the reflection image formed; a second inspection step of detecting a defect image from the photoluminescence image formed; and a defect classification step of classifying detected defects based on whether or not the defect image is detected and the shape of the detected defect image.
Abstract:
Provided are a defect classifying method and an inspection apparatus which are capable of classifying a defect by distinguishing a basal plane dislocation, which is a killer defect in bipolar high-voltage elements, from other defects. The defect classifying method according to the present invention includes: projecting an illumination beam toward a silicon carbide substrate and forming a reflection image and a photoluminescence image; a first inspection step of detecting a defect image from the reflection image formed; a second inspection step of detecting a defect image from the photoluminescence image formed; and a defect classification step of classifying detected defects based on whether or not the defect image is detected and the shape of the detected defect image.
Abstract:
The field of view of an objective lens is divided into two areas, and a transmission image of a photomask and a composite image obtained by optically synthesizing a transmission image and a reflection image of the photomask are picked up in parallel. A drop image generated at an edge portion of a pattern portion in the composite image is deleted by limiter processing or masking processing, or is deleted by using primary-differentiated signals of a composite image signal and a transmission image signal.
Abstract:
Provided are a chucking device having low dusting characteristics and high detergent properties and capable of vacuum-sucking even a substrate having a large warpage, and a chucking method using the same. A chucking device according to an aspect of the present invention vacuum-sucks and holds a wafer. The chucking device includes: a perforated plate having a plurality of through-holes and being mounted with a wafer, the through-holes penetrating through both sides of the perforated plate; a porous plate that supports a surface other than a mounting surface of the perforated plate, on which the wafer is mounted, transmits a vacuum state to the wafer through the plurality of through-holes, and has a pore to limit a flow rate; and a vacuum pump that exhausts an air through the pore of the porous plate.