DETERMINING THE RESONANCE PARAMETERS FOR MECHANICAL OSCILLATORS
    21.
    发明申请
    DETERMINING THE RESONANCE PARAMETERS FOR MECHANICAL OSCILLATORS 有权
    确定机械振荡器的共振参数

    公开(公告)号:US20100324852A1

    公开(公告)日:2010-12-23

    申请号:US12792500

    申请日:2010-06-02

    CPC classification number: G01D1/00 G01D15/00 G01H13/00 G01N17/04 G01N29/46

    Abstract: The prior art describes the application of mechanical oscillators for the measurement of corrosion and/or deposition. Mechanical oscillators employ the use of resonance parameters, frequency and the quality factor Q, for the measurement of corrosion or deposition. However, the prior art does not consider the required precision for measuring frequency or Q in the presence of noise to make these measurements. In particular, the ability of the mechanical oscillator to measure small amounts of metal loss or deposition is not only dependent upon the mechanical design but is limited by the precision in determining the resonance frequency and Q. The present invention discloses methods for measuring these resonance parameters with a high precision in the presence of noise. This degree of precision is required to maximize the utility of these devices as sensitive probes for corrosion and deposition (fouling) measurement. All of the embodiments described herein employ curve fitting consistent with modeling the mechanical oscillator as a simple harmonic oscillator. This curve fitting procedure, combined with averaging and utilizing signal processing parameters to mitigate noise effects, adds considerable precision in measuring resonance parameters.

    Abstract translation: 现有技术描述了用于测量腐蚀和/或沉积的机械振荡器的应用。 机械振荡器采用谐振参数,频率和质量因子Q来测量腐蚀或沉积。 然而,现有技术不考虑在存在噪声的情况下测量频率或Q的所需精度以进行这些测量。 特别地,机械振荡器测量少量金属损失或沉积的能力不仅取决于机械设计,而且受到确定共振频率和Q的精度的限制。本发明公开了用于测量这些谐振参数的方法 在噪声的存在下具有高精度。 需要这种精度来最大限度地利用这些装置作为腐蚀和沉积(污垢)测量的敏感探头。 本文所述的所有实施例都使用与将机械振荡器建模为简单谐波振荡器一致的曲线拟合。 该曲线拟合程序,结合平均和利用信号处理参数来减轻噪声影响,增加了测量共振参数的相当大的精度。

    Optical disc drive
    27.
    发明授权
    Optical disc drive 有权
    光盘驱动器

    公开(公告)号:US07562371B2

    公开(公告)日:2009-07-14

    申请号:US11462370

    申请日:2006-08-04

    CPC classification number: G11B17/056

    Abstract: An optical disc drive including a case, a tray, a turntable, a pickup head, a transmission mechanism, and a protecting cover is provided. The tray is movably set inside the case. The turntable is embedded in the tray. The pickup head is movably embedded in the tray. The transmission mechanism is embedded in the tray and connected to the pickup head. And the protecting cover is set on the tray and covers the transmission mechanism. The protecting cover has a protruding structure located on the surface of the protecting cover that corresponds to a non-data area of an optical disc. Moreover, the tray has a protruding structure located on the surface of the tray adjacent to the protecting cover. Furthermore, pads could be substituted for the abovementioned protruding structures.

    Abstract translation: 提供了包括壳体,托盘,转盘,拾取头,传动机构和保护盖的光盘驱动器。 托盘可移动地设置在外壳内。 转盘嵌入托盘。 拾取头可移动地嵌入托盘中。 传动机构嵌入托盘并连接到拾取头。 并且保护盖设置在托盘上并覆盖传动机构。 保护盖具有位于保护罩表面上对应于光盘的非数据区的突出结构。 此外,托盘具有位于托盘的与保护盖相邻的表面上的突出结构。 此外,垫可以代替上述突出结构。

    Memory and manufacturing method thereof
    29.
    发明申请
    Memory and manufacturing method thereof 有权
    其记忆及其制造方法

    公开(公告)号:US20090108331A1

    公开(公告)日:2009-04-30

    申请号:US11979101

    申请日:2007-10-31

    Abstract: A memory having isolated dual memory cells is provided. A first isolation wall and a second isolation wall are separately disposed between a source and a drain on a substrate. An isolation bottom layer and a polysilicon layer are orderly disposed on the substrate between the first and the second isolation walls. A first charge storage structure and a first gate are orderly disposed on the substrate between the first isolation wall and the source. A second charge storage structure and a second gate are orderly disposed on the substrate between the second isolation wall and the drain. A word line disposed on the polysilicon layer, the first gate, the second gate, the first isolation wall and the second isolation wall is electrically connected to the first gate, the second gate and the polysilicon layer.

    Abstract translation: 提供具有隔离双存储单元的存储器。 第一隔离壁和第二隔离壁分别设置在基板上的源极和漏极之间。 隔离底层和多晶硅层有序地设置在第一和第二隔离壁之间的衬底上。 第一电荷存储结构和第一栅极有序地设置在第一隔离壁和源极之间的衬底上。 第二电荷存储结构和第二栅极有序地设置在第二隔离壁和漏极之间的衬底上。 布置在多晶硅层上的字线,第一栅极,第二栅极,第一隔离壁和第二隔离壁电连接到第一栅极,第二栅极和多晶硅层。

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