公开(公告)号：US20160154467A1

公开(公告)日：2016-06-02

申请号：US14950036

申请日：2015-11-24

Applicant: Pyreos Ltd.

Inventor： Carsten Giebeler ,  Spyros Brown ,  Tim Chamberlain ,  Jonathan Ephraim David Hurwitz

IPC: G06F3/01 ,  H03K17/945

CPC classification number: G06F3/017 ,  G06F3/012 ,  G06F3/0308 ,  G06F3/041 ,  H03K17/943 ,  H03K17/945 ,  H03K2217/94106 ,  H03K2217/94112

Abstract: Switch operating device (100) with: a gesture sensor operating a switch (103) with a non-tactile push-gesture performed with a heat emitting part. The gesture has an approach phase (111) during which the part approaches the sensor, a waiting phase (113) during which the part remains proximate to the sensor, and a withdrawal phase (112) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs per pixel a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel while the gesture (115) is performed. A signal processing unit (101) which determines performance of the gesture from a temporal succession of signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the gesture is performed.

Abstract translation: 使用具有以热发射部分执行的非触觉推动手势操作开关（103）的手势传感器来切换操作装置（100）。 手势具有接近阶段（111），在该阶段期间，部件接近传感器，等待阶段（113）期间零件保持靠近传感器，以及抽出阶段（112），在该阶段，部件被移动远离传感器 。 该传感器利用至少一个像素检测由该部件发出的热量，并且每个像素输出信号（51至54），信号偏转（56,57）对应于由像素检测到的热量的时间强度曲线，而手势（115） 被执行。 信号处理单元（101），其从信号偏转的时间连续性确定手势的性能。 致动器（104）由信号处理单元控制，并且在执行手势时操作开关。

公开(公告)号：US20160149071A1

公开(公告)日：2016-05-26

申请号：US15011812

申请日：2016-02-01

Applicant: Pyreos Ltd.

Inventor： Carsten GIEBELER ,  Neil CONWAY

IPC: H01L31/18

CPC classification number: H01L31/1884 ,  G01J1/44 ,  G01J5/023 ,  G01J5/024 ,  G01J5/046 ,  G01J5/34 ,  G01J2005/345 ,  H01L37/02 ,  H01L37/025 ,  H01L41/316

Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

Abstract translation: 一种用于制造具有像素的微系统（1）的方法包括：通过硅晶片的氧化在硅晶片的表面上形成作为基底层（5）的热氧化硅层; 通过热沉积在基底层上形成作为载体层（6）的氧化硅薄层; 通过热沉积在载体层上产生铂层，由此产生中间产物; 将中间产物冷却至室温; 通过去除铂层的剩余区域来形成铂层的像素结构，由此像素（7,8）的底部电极（8,12）以剩余区域中的载体层上的像素形状形成; 去除硅晶片背离基底层的材料，因此保留框架（3），并且由基底层和载体层形成的膜（4）被框架横跨。