公开(公告)号：US20110311844A1

公开(公告)日：2011-12-22

申请号：US13143477

申请日：2009-12-21

Applicant: Yeon soo Han ,  Sang Youl Lee ,  Woo Jong Lim

Inventor： Yeon soo Han ,  Sang Youl Lee ,  Woo Jong Lim

IPC: H01M10/42

CPC classification number: H01M10/54 ,  H01M10/4242 ,  H01M2220/20 ,  H02J7/0075 ,  H02J7/0086 ,  H02J7/0091 ,  Y02W30/84

Abstract: Disclosed herein is a storage battery recycling apparatus in which a pulse current is applied to polar plates or electrodes of a storage battery functioning as a secondary cell through the SCR phase control so as to remove sulfate formed in a film or membrane on the electrodes of the storage battery, thereby recovering the performance of the storage battery in a deteriorated state. The inventive storage battery recycling apparatus includes: a transformer unit 200 for transforming a commercial AC power voltage supplied thereto from an external power source through a power input unit 100; an SCR driving unit 400 for converting the AC power voltage transformed by the transformer unit 200 into a voltage having a pulse waveform through the SCR phase control; an output terminal 500 adapted to be in close contact with the electrodes of the storage battery for supplying the converted pulse voltage outputted from the SCR driving unit 400 to the electrodes of the storage battery so as to charge the storage battery; an SCR controller 300 for controlling the operation of the SCR driving unit 400; a setting unit 600 and a display unit 650 for setting and displaying the operational environment of the storage battery recycling apparatus; a voltage detecting unit 900 and a current detecting unit 950 for detecting the voltage and current of the storage battery; and a microcomputer 700 for controlling the operation of each of the constituent elements.

Abstract translation: 这里公开了一种蓄电池回收设备，其中通过SCR相位控制将脉冲电流施加到用作二​​次电池的蓄电池的极板或电极上，以便去除形成在电极上的膜或膜中的硫酸盐 从而在劣化状态下恢复蓄电池的性能。 本发明的蓄电池回收装置包括：变压器单元200，用于通过电力输入单元100将从外部电源提供的商用AC电力电压变换; SCR驱动单元400，用于通过SCR相位控制将由变压器单元200变换的AC电压转换成具有脉冲波形的电压; 输出端子500，其适于与蓄电池的电极紧密接触，用于将从SCR驱动单元400输出的转换脉冲电压提供给蓄电池的电极，以对蓄电池充电; 用于控制SCR驱动单元400的操作的SCR控制器300; 设置单元600和用于设置和显示蓄电池回收设备的操作环境的显示单元650; 用于检测蓄电池的电压和电流的电压检测单元900和电流检测单元950; 以及用于控制每个组成元件的操作的微计算机700。

公开(公告)号：US20110210362A1

公开(公告)日：2011-09-01

申请号：US13102478

申请日：2011-05-06

Applicant: Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi ,  Chung Song Kim ,  Hwan Hee Jeong

Inventor： Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi ,  Chung Song Kim ,  Hwan Hee Jeong

IPC: H01L33/60 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.

Abstract translation: 发光器件包括发光结构，其包括第二导电类型半导体层，有源层和第一导电类型半导体层，布置在发光结构下的第二电极层，第一电极层，至少部分延伸到 接触通过第二导电类型半导体层和有源层的第一导电类型半导体层，以及布置在第二电极层和第一电极层之间，在第二导电类型半导体层和第一电极层之间以及介于 所述有源层和所述第一电极层，其中所述与所述第一导电型半导体层接触的所述第一电极层的所述至少一部分具有粗糙度。

公开(公告)号：US20110198991A1

公开(公告)日：2011-08-18

申请号：US13028686

申请日：2011-02-16

Applicant: Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi

Inventor： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi

IPC: H01J1/62 ,  H01L33/32 ,  H01L33/26 ,  H01L33/40 ,  H01L33/22 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L33/08 ,  H01L33/20 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.

Abstract translation: 公开了发光器件，其制造方法，发光器件封装和照明系统。 发光器件包括透射衬底，透射衬底上的欧姆层，欧姆层上的发光结构，并且包括第一和第二半导体层之间的第一导电半导体层，第二导电半导体层和有源层 ，透射基板的底面上的电极层，以及通过透射基板将发光结构与电极层电连接的导电通孔，其中透射基板的面积从下部向其上部增加。

公开(公告)号：US20110193117A1

公开(公告)日：2011-08-11

申请号：US13011479

申请日：2011-01-21

Applicant: Hwan Hee JEONG ,  Ji Hyung Moon ,  Sang Youl Lee ,  June O. Song

Inventor： Hwan Hee JEONG ,  Ji Hyung Moon ,  Sang Youl Lee ,  June O. Song

IPC: H01L33/60

CPC classification number: H01L33/42 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.

Abstract translation: 公开了一种发光器件和发光器件封装。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，第一导电类型的电极 半导体层，第二导电类型半导体层下面的反射层，在第二导电类型半导体层的下表面的外周部分处的保护层，以及在保护层上包括化合物半导体的光提取结构。

公开(公告)号：US20110193113A1

公开(公告)日：2011-08-11

申请号：US12986592

申请日：2011-01-07

Applicant: Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi

Inventor： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O. Song ,  Kwang Ki Choi

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/58

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.

Abstract translation: 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电半导体层，第一导电半导体层下方的有源层和有源层下的第二导电半导体层; 第二导电半导体层下面的第一电极层; 电极，其包括与所述第一导电半导体层的底表面的一部分接触的顶表面; 以及用于覆盖电极的外周面的绝缘构件，其中绝缘构件的一部分从电极的底面延伸到第二导电半导体层和第一电极层之间的区域中。

公开(公告)号：US07989820B2

公开(公告)日：2011-08-02

申请号：US12516956

申请日：2008-06-18

Applicant: Sang Youl Lee

Inventor： Sang Youl Lee

IPC: H01L27/15

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/44

Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

Abstract translation: 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：发光结构，包括第一导电类型半导体层，第一导电类型半导体层下的有源层和有源层下面的第二导电类型半导体层; 在发光结构下方的反射电极层，以及在反射电极层的外周的外保护层。

公开(公告)号：US20110156077A1

公开(公告)日：2011-06-30

申请号：US13044721

申请日：2011-03-10

Applicant: Sang Youl LEE ,  Jun Ho Song

Inventor： Sang Youl LEE ,  Jun Ho Song

IPC: H01L33/46

CPC classification number: H01L33/0079 ,  H01L2224/48091 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.

Abstract translation: 提供了一种发光器件。 发光器件包括：导电支撑衬底; 导电支撑基板上的接合层; 接合层上的反射层; 和反射层上的发光结构层。 所述接合层包括在所述导电性支撑基板上的焊料接合层，并且所述焊料接合层，所述焊料接合层，所述扩散阻挡层，以及所述粘合层的扩散阻挡层和粘附层中的至少一个由 金属或其杨氏模量为9GPa至200GPa的合金。

公开(公告)号：US20110089452A1

公开(公告)日：2011-04-21

申请号：US12797927

申请日：2010-06-10

Applicant: Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon ,  Kwang Ki Choi

Inventor： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon ,  Kwang Ki Choi

IPC: H01L33/60 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括发光结构，电极，反射层，导电支撑构件和沟道层。 发光结构可以包括多个化合物半导体层。 电极可以设置在化合物半导体层上。 反射层可以设置在化合物半导体层之下。 导电支撑构件可以设置在反射层下方。 沟道层可以沿着化合物半导体层的底部边缘设置。

公开(公告)号：US07928464B2

公开(公告)日：2011-04-19

申请号：US12702674

申请日：2010-02-09

Applicant: Sang Youl Lee ,  Jun Ho Song

Inventor： Sang Youl Lee ,  Jun Ho Song

IPC: H01L29/22

CPC classification number: H01L33/0079 ,  H01L2224/48091 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.

Abstract translation: 提供了一种发光器件。 发光器件包括：导电支撑衬底; 导电支撑基板上的接合层; 接合层上的反射层; 和反射层上的发光结构层。 所述接合层包括在所述导电性支撑基板上的焊料接合层，以及所述焊料接合层，所述焊料接合层，所述扩散阻挡层和所述粘附层的扩散阻挡层和粘附层中的至少一个由 金属或其杨氏模量为9GPa至200GPa的合金。

公开(公告)号：US20100193834A1

公开(公告)日：2010-08-05

申请号：US12758649

申请日：2010-04-12

Applicant: Sang Youl LEE

Inventor： Sang Youl LEE

IPC: H01L33/30

CPC classification number: H01L33/20 ,  H01L33/08 ,  H01L33/44

Abstract: A semiconductor light emitting device having a light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer above the at least one first conductive GaN based semiconductor layer, and at least one second conductive GaN based semiconductor layer above the active layer, a plurality of patterns disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, and an insulating member on the plurality of patterns. The plurality of patterns include a lower part contacting with the light emitting structure and a upper part contacting with the light emitting structure. A first base angle of the lower part is different from the second base angle of the upper part.

Abstract translation: 一种具有发光结构的半导体发光器件，其包括至少一个第一导电GaN基半导体层，至少一个第一导电GaN基半导体层上方的有源层以及有源层上方的至少一个第二导电GaN基半导体层 ，从所述至少一个第二导电GaN基半导体层通过所述至少一个第一导电GaN基半导体层的一部分设置的多个图案，以及所述多个图案上的绝缘构件。 多个图案包括与发光结构接触的下部和与发光结构接触的上部。 下部的第一底角与上部的第二底角不同。