WIRELESS FETAL MONITORING SYSTEM
    26.
    发明申请
    WIRELESS FETAL MONITORING SYSTEM 有权
    无线FET监控系统

    公开(公告)号:US20120232398A1

    公开(公告)日:2012-09-13

    申请号:US13290002

    申请日:2011-11-04

    Abstract: A wireless fetal and maternal monitoring system includes a fetal sensor unit adapted to receive signals indicative of a fetal heartbeat, the sensor optionally utilizing a Doppler ultrasound sensor. A short-range transmission unit sends the signals indicative of fetal heartbeat to a gateway unit, either directly or via an auxiliary communications unit, in which case the electrical coupling between the short-range transmission unit and the auxiliary communications unit is via a wired connection. The system includes a contraction actuator actuatable upon a maternal uterine contraction, which optionally is a EMG sensor. A gateway device provides for data visualization and data securitization. The gateway device provides for remote transmission of information through a data communication network. A server adapted to receive the information from the gateway device serves to store and process the data, and an interface system to permits remote patient monitoring.

    Abstract translation: 无线胎儿和母亲监测系统包括适于接收指示胎儿心跳的信号的胎儿传感器单元,所述传感器可选地使用多普勒超声传感器。 短距离传输单元直接地或经由辅助通信单元将指示胎心跳信号的信号发送到网关单元,在这种情况下,短程传输单元和辅助通信单元之间的电耦合经由有线连接 。 该系统包括可在母体子宫收缩时致动的收缩致动器,其可选地是EMG传感器。 网关设备提供数据可视化和数据证券化。 网关设备通过数据通信网络提供信息的远程传输。 适于从网关设备接收信息的服务器用于存储和处理数据,以及允许远程病人监视的接口系统。

    Low Temperature Surface Preparation for Removal of Organometallic Polymers in the Manufacture of Integrated Circuits
    27.
    发明申请
    Low Temperature Surface Preparation for Removal of Organometallic Polymers in the Manufacture of Integrated Circuits 审中-公开
    用于去除有机金属聚合物的低温表面准备在集成电路的制造中

    公开(公告)号:US20110053372A1

    公开(公告)日:2011-03-03

    申请号:US12549538

    申请日:2009-08-28

    CPC classification number: H01L21/0206 H01L21/31133 H01L21/32139 H01L28/60

    Abstract: A method of removing photoresist from a surface during the manufacture of an integrated circuit. Organometallic polymers and monomers are formed during the etch of a hard mask material defining the locations of a metal-bearing film, such as tantalum nitride, when photoresist is used to mask the hard mask etch. These organometallic polymers and monomers as formed are not fully cross-linked. A liquid phase solution of sulfuric acid and hydrogen peroxide used to remove the photoresist also removes these not-fully-cross-linked organometallic polymers and monomers, thus preventing the formation of stubborn contaminants during subsequent high temperature processing.

    Abstract translation: 在制造集成电路期间从表面去除光致抗蚀剂的方法。 在光刻胶用于掩蔽硬掩模蚀刻时,在蚀刻期间限定含金属膜(例如氮化钽)的位置的硬掩模材料的蚀刻期间形成有机金属聚合物和单体。 形成的这些有机金属聚合物和单体不完全交联。 用于除去光致抗蚀剂的硫酸和过氧化氢的液相溶液也可除去这些不完全交联的有机金属聚合物和单体,从而防止在随后的高温处理期间形成顽固的污染物。

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