公开(公告)号：US07724349B2

公开(公告)日：2010-05-25

申请号：US11797358

申请日：2007-05-02

Applicant: Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derek Jan Wilfred Klunder

Inventor： Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derek Jan Wilfred Klunder

IPC: G03B27/42 ,  G03B27/54

CPC classification number: G03F7/70916 ,  G03F7/70558 ,  G03F7/7085

Abstract: A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor.

Abstract translation: 一个装置被安排来测量与辐射有关的数量。 该装置包括被配置为测量该数量的传感器，布置成保护传感器免受从被配置为发射极紫外辐射的源射出的入射颗粒的屏幕，以及被配置为重定向由该源发射的超过紫外线的过滤器， 到传感器。

公开(公告)号：US20090074962A1

公开(公告)日：2009-03-19

申请号：US11898801

申请日：2007-09-14

Applicant: Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

Inventor： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

IPC: C23C16/06

CPC classification number: C23C16/06 ,  C23C16/0236 ,  G03F7/70916 ,  G03F7/70983

Abstract: A method for the protection of an optical element of a lithographic apparatus is disclosed. A deposition gas comprising SnH4 is provided to the surface of the optical element to deposit a Sn cap layer on the surface of the optical element. In this way, a Sn cap layer is deliberately provided on the optical element, which may protect the optical element during lithographic processing from debris from a (Sn) plasma source. During or after lithographic processing, the (deteriorated) cap layer may be repaired by providing a hydrogen radical containing gas and/or a SnH4 containing gas. Additionally or alternatively, the (deteriorated) cap layer may be removed and a new cap layer provided by providing the deposition gas comprising SnH4.

Abstract translation: 公开了一种用于保护光刻设备的光学元件的方法。 包含SnH4的沉积气体被提供到光学元件的表面以在光学元件的表面上沉积Sn盖层。 以这种方式，在光学元件上有意地提供Sn盖层，这可以在光刻处理期间保护光学元件免受来自（Sn）等离子体源的碎片的影响。 在平版印刷加工期间或之后，可以通过提供含氢自由基气体和/或含SnH 4的气体来修复（劣化的）盖层。 附加地或替代地，可以去除（劣化的）盖层，并且通过提供包括SnH 4的沉积气体提供新的盖层。

公开(公告)号：US20080142736A1

公开(公告)日：2008-06-19

申请号：US11637936

申请日：2006-12-13

Applicant: Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

Inventor： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

IPC: G21K5/00 ,  H05G2/00

CPC classification number: G03F7/70933 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/005

Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Abstract translation: 提供了一种用于产生限定光轴的辐射束的辐射系统。 辐射系统包括用于产生EUV辐射的等离子体产生的放电源。 放电源包括一对构造和布置成具有电压差的电极，以及用于在一对电极之间产生等离子体的系统，以便在电极之间的等离子体中提供放电。 辐射系统还包括用于从电极捕获碎屑的碎片捕获屏蔽。 碎片捕捉屏蔽被构造和布置成屏蔽电极与相对于光轴以预定球面角度提供的视线，并为视线中的电极之间的中心区域提供孔。

公开(公告)号：US20080074655A1

公开(公告)日：2008-03-27

申请号：US11527731

申请日：2006-09-27

Applicant: Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

Inventor： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

IPC: G01N21/00

CPC classification number: G03F7/70916 ,  G01N21/15 ,  G03F7/70558

Abstract: An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Abstract translation: 公开了一种用于极紫外光刻系统的光学传感器装置。 该装置包括光学传感器，其包括传感器表面和被配置为从传感器表面去除碎屑的移除机构。 因此，可以方便地为光刻系统进行剂量和/或污染测量。

公开(公告)号：US09465306B2

公开(公告)日：2016-10-11

申请号：US13003137

申请日：2009-07-13

Applicant: Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

Inventor： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

IPC: G21K5/00 ,  G03F7/20 ,  H05G2/00

CPC classification number: G03F7/70916 ,  G03F7/70033 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70908 ,  H05G2/003 ,  H05G2/008

Abstract: A source module for use in a lithographic apparatus is constructed to generate extreme ultra violet (EUV) and secondary radiation, and includes a buffer gas configured to cooperate with a source of the EUV radiation. The buffer gas has at least 50% transmission for the EUV radiation and at least 70% absorption for the secondary radiation.

Abstract translation: 用于光刻设备的源模块被构造成产生极紫外（EUV）和二次辐射，并且包括配置成与EUV辐射源协作的缓冲气体。 缓冲气体对于EUV辐射具有至少50％的透射率，对于次级辐射具有至少70％的吸收。

公开(公告)号：US09041912B2

公开(公告)日：2015-05-26

申请号：US13617705

申请日：2012-09-14

Applicant: Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrey Mikhailovich Yakunin ,  Martin Jacobus Johan Jak

Inventor： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrey Mikhailovich Yakunin ,  Martin Jacobus Johan Jak

IPC: G03B27/72 ,  G03F7/20 ,  G21K1/10

CPC classification number: G03F7/702 ,  G03F7/70191 ,  G03F7/70575 ,  G21K1/10

Abstract: According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 μm.

Abstract translation: 根据本发明的一个方面，光谱纯度滤光器包括孔径，孔被布置成衍射第一波长的辐射并且允许第二波长的辐射的至少一部分透射通过孔，第二 辐射的波长比辐射的第一波长短，其中孔径的直径大于20μm。

公开(公告)号：US08817237B2

公开(公告)日：2014-08-26

申请号：US13392434

申请日：2010-07-21

Applicant: Wouter Anthon Soer ,  Martin Jacobus Johan Jak ,  Ronald Dekker

Inventor： Wouter Anthon Soer ,  Martin Jacobus Johan Jak ,  Ronald Dekker

IPC: G03B27/32 ,  G03B27/72 ,  G03F7/20 ,  G21K1/10 ,  G02B5/18

CPC classification number: G03F7/70575 ,  G02B5/1809 ,  G21K1/10

Abstract: A method of forming a spectral purity filter having a plurality of apertures configured to transmit extreme ultraviolet radiation and suppress transmission of a second type of radiation, in which trenches are formed in a base material in a pattern corresponding to the walls to be formed between the apertures. The trenches are filled with a grid material to form walls of the grid material, and the base material is selectively removed until the grid material is exposed and forms the spaces between the walls of the grid material for the apertures.

Abstract translation: 一种形成光谱纯度滤光片的方法，该光谱纯度滤光器具有多个孔，其被配置为透射极紫外辐射并抑制第二类型辐射的透射，其中沟槽以对应于待形成的壁之间的壁的图案形成在基材中 孔。 沟槽填充有栅格材料以形成栅格材料的壁，并且选择性地去除基底材料，直到栅格材料暴露并且在孔的栅格材料的壁之间形成空间。

公开(公告)号：US08593617B2

公开(公告)日：2013-11-26

申请号：US12920417

申请日：2009-03-03

Applicant: Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

Inventor： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer

IPC: G03B27/42 ,  G03B27/54

CPC classification number: G03F7/70958 ,  G03F7/70033 ,  G03F7/70916 ,  G03F7/70983

Abstract: A lithographic apparatus includes a plasma source that includes a vessel configured to enclose a plasma formation site, an optical device configured to transfer optical radiation to or from the vessel, and a reflector arranged in an optical path between the optical device and the plasma formation site source. The reflector is configured to reflect the optical radiation between the optical device and the plasma formation site. The reflector is formed, in operation, as a molten metal mirror.

Abstract translation: 光刻设备包括等离子体源，其包括构造成包围等离子体形成位置的容器，被配置为向容器转移光辐射的光学器件和布置在光学器件与等离子体形成部位之间的光路中的反射器 资源。 反射器被配置为反射光学装置和等离子体形成部位之间的光辐射。 反射器在操作中形成为熔融金属镜。

公开(公告)号：US20130114059A1

公开(公告)日：2013-05-09

申请号：US13808636

申请日：2011-06-06

Applicant: Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunn ,  Maarten Van Kampen ,  Gerard Frans Jozef Schasfoort

Inventor： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunn ,  Maarten Van Kampen ,  Gerard Frans Jozef Schasfoort

IPC: C09D5/08 ,  B32B15/01 ,  G02B5/20 ,  G03F7/20

CPC classification number: C09D5/08 ,  B32B15/01 ,  B32B15/018 ,  G02B5/208 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70858 ,  G03F7/70908 ,  G03F7/70916 ,  G21K1/10 ,  H05G2/008 ,  Y10T428/12736 ,  Y10T428/12778 ,  Y10T428/12806 ,  Y10T428/12986 ,  Y10T428/31678

Abstract: A metal component (262M, 300M) is designed for use in an EUV lithography apparatus, for example as a spectral purity filter (260) or a heating element (300) in a hydrogen radical generator. An exposed surface of the metal is treated (262P, 300P) to inhibit the formation of an oxide of said metal in an air environment prior to operation. This prevents contamination of optical components by subsequent evaporation of the oxide during operation of the component at elevated temperatures.

Abstract translation: 金属部件（262M，300M）被设计用于EUV光刻设备中，例如作为氢自由基发生器中的光谱纯度过滤器（260）或加热元件（300）。 处理金属的暴露表面（262P，300P）以在操作之前在空气环境中抑制所述金属的氧化物的形成。 这防止了在组件在升高的温度下操作期间随后氧化物的蒸发而污染光学部件。

公开(公告)号：US20110211185A1

公开(公告)日：2011-09-01

申请号：US13059057

申请日：2009-07-09

Applicant: Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

Inventor： Martin Jacobus Johan Jak ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Andrei Mikhailovich Yakunin

IPC: G03B27/72 ,  G02B13/14 ,  G02B5/20 ,  G03F7/20

CPC classification number: G03F7/702 ,  G03F7/70191 ,  G03F7/70575 ,  G21K1/10

Abstract: A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.

Abstract translation: 光谱纯度滤光器被配置为允许透射通过其中的极紫外（EUV）辐射并折射或反射非EUV次级辐射。 光谱纯度滤光片可以是源模块和/或光刻设备的一部分。