公开(公告)号：US20120274771A1

公开(公告)日：2012-11-01

申请号：US13548668

申请日：2012-07-13

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L31/0352 ,  H04N7/18 ,  B82Y15/00

CPC classification number: B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

Abstract: An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.

Abstract translation: 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散在光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

公开(公告)号：US07999231B2

公开(公告)日：2011-08-16

申请号：US12508008

申请日：2009-07-23

Applicant: Yasuhiro Iguchi ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Youichi Nagai

IPC: G01J5/20

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/03042 ,  H01L31/03046 ,  Y02E10/544

Abstract: A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.

Abstract translation: 水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。 水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

公开(公告)号：US07332751B2

公开(公告)日：2008-02-19

申请号：US11073322

申请日：2005-03-04

Applicant: Yasuhiro Iguchi

Inventor： Yasuhiro Iguchi

IPC: H01L31/072

CPC classification number: H01L27/1446

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.

Abstract translation: 背照式光电二极管阵列具有（a）第一导电型半导体基板，（b）第一导电型电极，其设置在半导体基板的后侧，并且具有一或二个开口 （c）设置在第一导电型电极的每个开口处的抗反射涂层，（d）形成在基板的正面侧的第一导电型吸收层，（e） 设置在吸收层上并具有比吸收层的吸收边长波长的吸收边缘波长的漏光波吸收层，（f）多个第二导电型区域， 光吸收层从上表面延伸到吸收层一定程度，并且在相反侧的抗反射涂层的位置一一或二维地排列，（g）一个 设置在每个第二导电型区域的顶表面上的导电型电极。

公开(公告)号：US06835990B2

公开(公告)日：2004-12-28

申请号：US10359582

申请日：2003-02-07

Applicant: Yasuhiro Iguchi ,  Akira Yamaguchi ,  Manabu Shiozaki ,  Takashi Iwasaki ,  Kenji Ohki

Inventor： Yasuhiro Iguchi ,  Akira Yamaguchi ,  Manabu Shiozaki ,  Takashi Iwasaki ,  Kenji Ohki

IPC: H01L310232

CPC classification number: H01L31/02165 ,  G02B6/29361 ,  G02B6/4214

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

Abstract translation: 半导体光接收元件具有半导体部分。 半导体部分包括基板，光检测部分和滤波部分。 基板，光检测部分和滤光器部分沿预定轴线方向依次设置。 光检测部分具有包括III-V半导体层的光吸收层，包括III-V半导体层的窗口层和阳极半导体区域。 光吸收层是n或i导电型半导体层。 光吸收层设置在III-V半导体层和窗口层之间。 光检测部分设置在半导体衬底的一个表面上，其间插入III-V半导体层。 滤波器部分包括InGaAsP半导体层和III-V半导体层。

公开(公告)号：US06696740B2

公开(公告)日：2004-02-24

申请号：US10310924

申请日：2002-12-06

Applicant: Yoshiki Kuhara ,  Yasuhiro Iguchi

Inventor： Yoshiki Kuhara ,  Yasuhiro Iguchi

IPC: H01L3106

CPC classification number: G02B6/4246 ,  H01L31/02162 ,  H01L31/1035 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A photodiode that is used in an optical communication system using two different wavelengths, &lgr;1 and &lgr;2 (&lgr;1

Abstract translation: 在光通信系统中使用的光电二极管，其使用两个不同的波长λ1和λ2（λ1<λ2），并且能够减少由具有较长波长λ2的出射光引起的光学串扰。 接收具有较短波长λ1的光的光电二极管设置有由具有带隙波长的材料制成的吸收层。 （λ1

公开(公告)号：US06683326B2

公开(公告)日：2004-01-27

申请号：US09986366

申请日：2001-11-08

Applicant: Yasuhiro Iguchi ,  Yoshiki Kuhara

Inventor： Yasuhiro Iguchi ,  Yoshiki Kuhara

IPC: H01L2715

CPC classification number: H01L31/1035 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer, and another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate, a decrease of sensitivity by the substrate absorption can be prevented.

Abstract translation: 本发明涉及高灵敏度顶电极和底照型光电二极管。 该器件由高度掺杂的缓冲层，半绝缘衬底上的光电检测层组成。 在形成在光检测层中的导电畴上形成电极，另一电极通过去除一部分光检测层而形成在高掺杂缓冲层的局部露出的周边区域上。 由于半绝缘基板吸收较少的基板中的光，可以防止基板吸收的灵敏度的降低。

公开(公告)号：US5910014A

公开(公告)日：1999-06-08

申请号：US589248

申请日：1996-01-23

Applicant: Takashi Iwasaki ,  Nobuhisa Tanaka ,  Yasuhiro Iguchi ,  Naoyuki Yamabayashi

Inventor： Takashi Iwasaki ,  Nobuhisa Tanaka ,  Yasuhiro Iguchi ,  Naoyuki Yamabayashi

IPC: H01L21/28 ,  H01L21/22 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1844 ,  H01L31/022416 ,  H01L31/103 ,  Y02E10/544

Abstract: InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially grown layers and an InGaAs light sensing layer. An insulating protection film of SixNy or SiOx with openings is selectively deposited on the epitaxial wafer. Compound semiconductor undercoats of a compound semiconductor with a narrower band gap than InP are grown on the InP window layers at the openings by utilizing the protection film as a mask. A p-type impurity from a solid source or a gas source is diffused through the undercoats and the epitaxial InP layer into the InGaAs sensing layer. Then, either p-electrodes are formed on the undercoats and the undercoats are etched by utilizing the p-electrodes as a mask, or the undercoats are shaped by selective etching in a form of p-electrodes and the p-electrodes are formed on the undercoats.

Abstract translation: InGaAs光电二极管在具有InP衬底，外延生长层和InGaAs光感测层的外延InP晶片上产生。 在外延晶片上选择性地沉积具有开口的SixNy或SiOx的绝缘保护膜。 通过利用保护膜作为掩模，在开口处的InP窗口层上生长具有比InP窄的带隙的化合物半导体的化合物半导体底漆。 来自固体源或气体源的p型杂质通过底涂层和外延InP层扩散到InGaAs感测层中。 然后，在底涂层上形成p-电极，通过利用p电极作为掩模蚀刻底涂层，或者通过以p电极的形式的选择性蚀刻来形成底涂层，并且p电极形成在 底漆。

公开(公告)号：US5316956A

公开(公告)日：1994-05-31

申请号：US11747

申请日：1993-02-01

Applicant: Takashi Iwasaki ,  Yasuhiro Iguchi ,  Naoyuki Yamabayashi

Inventor： Takashi Iwasaki ,  Yasuhiro Iguchi ,  Naoyuki Yamabayashi

IPC: H01L31/10 ,  H01L31/18

CPC classification number: H01L31/1844 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/938

Abstract: A method for manufacturing semiconductor light-receiving elements is provided. The method includes the steps of forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate, forming a p-type layer in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer, and separating the n-InP substrate on which the p-type layer has been formed into semiconductor light-receiving elements.

Abstract translation: 提供一种制造半导体光接收元件的方法。 该方法包括以下步骤：通过至少将In气体，Ga气体和As气体供应到在n-InP衬底的表面上，在n-InP衬底上形成至少包含In，Ga和As的光接收层的外延层 n-InP衬底，其容纳n-InP衬底的容器的一侧，通过将p型杂质热扩散到光接收层中，形成浮岛的构型的p型层， InP衬底，其中p型层已经形成为半导体光接收元件。

公开(公告)号：US20140319464A1

公开(公告)日：2014-10-30

申请号：US14365515

申请日：2012-06-11

Applicant: Yasuhiro Iguchi

Inventor： Yasuhiro Iguchi

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/0352

CPC classification number: H01L31/02161 ,  B82Y20/00 ,  H01L27/14647 ,  H01L31/022408 ,  H01L31/02363 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/109 ,  H01L31/18 ,  H01L2224/16225 ,  Y02E10/50

Abstract: A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode.

Abstract translation: 光接收元件包括用于接收光的光接收层，光接收层设置在半导体衬底上，设置在光接收层上的接触层和与触点欧姆接触的像素电极 层。 半导体基板的背面作为光入射面起作用，并且在接触层和像素电极之间的预定区域插入用于防止接触层和像素电极之间的化学反应的防反射膜。

公开(公告)号：US08513759B2

公开(公告)日：2013-08-20

申请号：US12906858

申请日：2010-10-18

Applicant: Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L27/146

CPC classification number: H01L27/1446 ,  H01L31/1035 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

Abstract translation: 包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度 的氮，制造光电二极管阵列的方法和光学测量系统。 在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，该开口设置在一维或二维中，并且选择性地生长多个半导体层3a，3b 和包括开口中的吸收层3b的3c。