公开(公告)号：US2543185A

公开(公告)日：1951-02-27

申请号：US1490748

申请日：1948-03-15

Applicant: YVES MATHIEU

Inventor： YVES MATHIEU

IPC: F16L21/04

CPC classification number: F16L21/04 ,  Y10S285/906 ,  Y10S285/922

公开(公告)号：US20110032117A1

公开(公告)日：2011-02-10

申请号：US12809622

申请日：2008-12-18

Applicant: Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Juergen Zach

Inventor： Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Juergen Zach

IPC: G01V3/00

CPC classification number: E21B47/122 ,  E21B17/003 ,  E21B47/121

Abstract: A downhole electromagnetic telemetry unit for use with a tubing string (5) includes an insulated electrically conductive member (31) and a processing unit (15). The insulated electrically conductive member (31) is electrically coupled to the tubing string (5) at an upper measuring point (23) and a lower measuring point (25). The processing unit (15) is configured to process a voltage difference measured between the upper measuring point (23) and the lower measuring point (25) across the insulated electrically conductive member (31) and to derive therefrom a signal transmitted from a surface location (13).

Abstract translation: 用于油管柱（5）的井下电磁遥测单元包括绝缘导电构件（31）和处理单元（15）。 绝缘导电构件（31）在上测量点（23）和下测量点（25）处电耦合到油管柱（​​5）。 处理单元（15）被配置为跨过绝缘导电构件（31）处理在上测量点（23）和下测量点（25）之间测量的电压差，并且从其导出从表面位置发送的信号 （13）。

公开(公告)号：US20100149056A1

公开(公告)日：2010-06-17

申请号：US12524013

申请日：2008-01-21

Applicant: Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Sylvain Chambon

Inventor： Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Sylvain Chambon

IPC: H01Q1/04

CPC classification number: H01Q1/04 ,  E21B47/122 ,  G01V11/002

Abstract: An EM antenna for location on a pipe (10) surrounded by a casing (12). The antenna has a power source (21) for injecting a current across a first insulated section (25) of the pipe (10) and an electrode (22) for conducting the current from the pipe (10) to the casing (12). There is also a second insulated section (23) of the pipe arranged to operate together with the electrode (22) and first insulated section (25) for directing a path flow of the current. Such antennas are described both in relation to repeater arrangements as well as land and sea applications.

Abstract translation: 用于位于由壳体（12）围绕的管道（10）上的EM天线。 天线具有用于将电流注入管道（10）的第一绝缘部分（25）的电源（21）和用于将电流从管道（10）传导到壳体（12）的电极（22）。 还有一个管的第二绝缘部分（23），被布置成与电极（22）和第一绝缘部分（25）一起操作以引导电流的路径流动。 这些天线既涉及中继器布置以及陆地和海上应用。

公开(公告)号：US07535115B2

公开(公告)日：2009-05-19

申请号：US11274264

申请日：2005-11-16

Applicant: Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

Inventor： Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

IPC: H01L23/58 ,  H01L23/544

CPC classification number: H01L21/76254 ,  H01L21/2258

Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implanbumtation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

Abstract translation: 一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。 转移层可以包括一种或多种外来物质来改变其性质。 在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为 转入。 然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。 然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。 外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。 优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

公开(公告)号：US07520321B2

公开(公告)日：2009-04-21

申请号：US10554362

申请日：2004-04-09

Applicant: Stéphane Hiron ,  Yves Mathieu ,  Christian Chouzenoux ,  Patrick Gourdonneau ,  Nicolas Renoux

Inventor： Stéphane Hiron ,  Yves Mathieu ,  Christian Chouzenoux ,  Patrick Gourdonneau ,  Nicolas Renoux

IPC: E21B29/02

CPC classification number: E21B47/12 ,  H04B2203/5475

Abstract: A well instrumentation system, comprising: a power and data supply; and a plurality of functional units attached to the power and data supply and distributed throughout the well, characterised in that the power and data supply comprises first and second substantially identical cables, and in that each unit comprises a first power supply channel and a first data channel connected to the first cable, a second power supply channel and a second data channel connected to the second cable, and a functional module which draws power from the first power supply channel or the second power channel module, and data from the first data channel or the second data channel. The power and data supply can comprise a surface unit that can be selectably connected to either the first or second cable. The selection of connection of the surface unit to one or other cable is effective to select the corresponding power and data channels in the functional units.

Abstract translation: 一个井仪表系统，包括：电力和数据供应; 以及附接到电力和数据供应并分布在整个井中的多个功能单元，其特征在于，所述电源和数据供应包括第一和第二基本相同的电缆，并且每个单元包括第一电源通道和第一数据 连接到第一电缆的通道，连接到第二电缆的第二电源通道和第二数据通道，以及从第一电源通道或第二电源通道模块吸取电力的功能模块以及来自第一数据通道的数据 或第二数据信道。 电力和数据供应可以包括可以可选择地连接到第一或第二电缆的表面单元。 表面单元与一根或另一根电缆连接的选择有效地在功能单元中选择相应的功率和数据通道。

公开(公告)号：US07378729B2

公开(公告)日：2008-05-27

申请号：US11285008

申请日：2005-11-23

Applicant: Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Le Vaillant ,  Takeshi Akatsu

Inventor： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Le Vaillant ,  Takeshi Akatsu

IPC: H01L23/12

CPC classification number: H01L21/02032

Abstract: A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.

Abstract translation: 由在分离至少一个有用层之后再循环晶片的方法产生的施主晶片。 施主晶片包括基板; 衬底上的缓冲结构; 与缓冲结构相关联的保护层; 以及位于缓冲结构上方的后分离层，并且在其表面上呈现突起或粗糙部分。 当去除后剥离层时，保护层防止整个缓冲结构的移除。

公开(公告)号：US20070080963A1

公开(公告)日：2007-04-12

申请号：US10585062

申请日：2004-12-29

Applicant: Cunat Christophe ,  Yves Mathieu

Inventor： Cunat Christophe ,  Yves Mathieu

IPC: G06T15/20 ,  G06T15/10

CPC classification number: G06T15/04

Abstract: A method of mapping an input image split into input triangles including texels onto an output image also split into corresponding output triangles including pixels. Said method comprising the steps of: determining an inverse affine transform (BT) for transforming an intermediate rectangle triangle (T0) into an input triangle (T1); determining a direct affine transform (FT) for transforming the intermediate rectangle triangle (T0) into an output triangle (T2); applying the inverse affine transform to intermediate points of the intermediate rectangle triangle (T0) so as to determine intermediate intensity values corresponding to said intermediate points on the basis of input intensity values of texels; and applying the direct affine transform to the intermediate points so as to determine output intensity values of pixels on the basis of the intermediate intensity values.

Abstract translation: 将分割成输入三角形的输入图像（包括纹理像素）映射到输出图像上的方法也被分割成包括像素的对应输出三角形。 所述方法包括以下步骤：确定用于将中间矩形三角形（T 0）变换为输入三角形（T 1）的逆仿射变换（BT）; 确定用于将中间矩形三角形（T 0）变换为输出三角形（T 2）的直接仿射变换（FT）; 将逆仿射变换应用到中间矩形三角形（T 0）的中间点，以便基于纹素的输入强度值确定与所述中间点对应的中间强度值; 以及将直接仿射变换应用于中间点，以便基于中间强度值来确定像素的输出强度值。

公开(公告)号：US07187162B2

公开(公告)日：2007-03-06

申请号：US10733470

申请日：2003-12-12

Applicant: Sebastien Kerdiles ,  Yves-Mathieu Le Vaillant

Inventor： Sebastien Kerdiles ,  Yves-Mathieu Le Vaillant

IPC: G01R31/28

CPC classification number: H01L21/68707 ,  G01N19/04 ,  H01L21/67092 ,  Y10S156/943 ,  Y10T29/53683 ,  Y10T83/0267 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1978 ,  Y10T156/1983

Abstract: A tool for disuniting two wafers, at least one of which is for use in fabricating substrates for microelectronics, optoelectronics, or optics, the tool comprising two gripper members suitable for being fixed temporarily to respective opposite faces of the two wafers that are united with each other, and a disuniting control device suitable for moving said members relative to each other. The tool is remarkable in that the disuniting control device comprises an actuator for positively displacing said gripper members and for inducing controlled flexing in at least one of said members. This makes it easier to disunite the wafers while reducing the risk of damaging them. The invention is applicable to disuniting wafers that have been weakened by implantation, that have been temporarily bonded together, etc.

Abstract translation: 用于分离两个晶片的工具，其中至少一个用于制造用于微电子学，光电子学或光学器件的衬底，该工具包括两个夹持器构件，其适于临时固定在两个晶片的相应的相对面上 以及适于相对于彼此移动所述构件的分离控制装置。 该工具是显着的，因为分离控制装置包括用于使所述夹持构件正向移动并用于在至少一个所述构件中引起受控弯曲的致动器。 这使得更容易使晶片脱粒，同时降低了损坏晶片的风险。 本发明适用于已经被临时粘合在一起的通过植入而被削弱的晶片的分离等。

公开(公告)号：US20050191779A1

公开(公告)日：2005-09-01

申请号：US10863193

申请日：2004-06-07

Applicant: Yves Mathieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

Inventor： Yves Mathieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC: H01L21/762 ,  H01L21/30 ,  C12P21/06 ,  H01L21/00 ,  H01L21/46

CPC classification number: H01L21/76254 ,  H01L2221/68318 ,  Y10S438/977

Abstract: A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

Abstract translation: 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

公开(公告)号：US4347603A

公开(公告)日：1982-08-31

申请号：US145539

申请日：1980-05-01

Applicant: Jean-Baptiste Jacob ,  Yves Mathieu ,  Michel Ruvoen

Inventor： Jean-Baptiste Jacob ,  Yves Mathieu ,  Michel Ruvoen

IPC: H04L1/22 ,  H04Q11/04 ,  H04J3/08 ,  H04L1/10 ,  H04L1/16

CPC classification number: H04L1/22 ,  H04Q11/0407

Abstract: The present invention consists in a system for exchanging encoded messages between stations, in which each station comprises a connection module (2) connected to a signal bus (LMS) and to a data bus (LMI), the signal and data buses being serial multiplex links synchronized by a general timebase, a time interval comprising consecutive even-numbered and odd-numbered time slots being allocated in each signalling frame to each connection module. In this system for exchanging encoded messages, the signal and data buses are duplicated for security reasons, signalling messages being sent simultaneously on both signal buses and data messages being sent simultaneously on both data buses, messages being received on one bus only.

Abstract translation: 本发明包括用于在站之间交换编码消息的系统，其中每个站包括连接到信号总线（LMS）和数据总线（LMI）的连接模块（2），所述信号和数据总线是串行多路复用 由通用时基同步的链路，包括在每个信令帧中分配给每个连接模块的连续偶数和奇数时隙的时间间隔。 在用于交换编码消息的系统中，出于安全原因，信号和数据总线被复制，在两个信号总线上同时发送信令消息和在两个数据总线上同时发送的数据消息，仅在一个总线上接收消息。