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    Downhole telemetry system
    1.
    发明授权
    Downhole telemetry system 失效
    井下遥测系统

    公开(公告)号：US08711045B2

    公开(公告)日：2014-04-29

    申请号：US12524013

    申请日：2008-01-21

    Applicant: Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Sylvain Chambon

    Inventor： Matthe Contant ,  Erwann Lemenager ,  Yves Mathieu ,  Sylvain Chambon

    IPC: H01Q1/04

    CPC classification number: H01Q1/04 ,  E21B47/122 ,  G01V11/002

    Abstract: An EM antenna for location on a pipe (10) surrounded by a casing (12). The antenna has a power source (21) for injecting a current across a first insulated section (25) of the pipe (10) and an electrode (22) for conducting the current from the pipe (10) to the casing (12). There is also a second insulated section (23) of the pipe arranged to operate together with the electrode (22) and first insulated section (25) for directing a path flow of the current. Such antennas are described both in relation to repeater arrangements as well as land and sea applications.

    Abstract translation: 用于位于由壳体（12）围绕的管道（10）上的EM天线。 天线具有用于将电流注入管道（10）的第一绝缘部分（25）的电源（21）和用于将电流从管道（10）传导到壳体（12）的电极（22）。 还有一个管的第二绝缘部分（23），被布置成与电极（22）和第一绝缘部分（25）一起操作以引导电流的路径流动。 这些天线既涉及中继器布置以及陆地和海上应用。

    Wafer and method of producing a substrate by transfer of a layer that includes foreign species
    2.
    发明授权
    Wafer and method of producing a substrate by transfer of a layer that includes foreign species 有权

    公开(公告)号：US07008859B2

    公开(公告)日：2006-03-07

    申请号：US10678127

    申请日：2003-10-06

    Applicant: Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

    Inventor： Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

    IPC: H01L21/30 ,  H01L21/20

    CPC classification number: H01L21/76254 ,  H01L21/2258

    Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

    Image processing circuit with reduced number of contact pads
    3.
    发明授权
    Image processing circuit with reduced number of contact pads 失效
    图像处理电路数量少的接触片

    公开(公告)号：US5163100A

    公开(公告)日：1992-11-10

    申请号：US681629

    申请日：1991-04-02

    Applicant: Yves Mathieu ,  Philippe Martin

    Inventor： Yves Mathieu ,  Philippe Martin

    IPC: G06T1/20 ,  G06T5/20 ,  G06T7/00

    CPC classification number: G06T5/20

    Abstract: An integrated circuit for the processing of digitized signals which are representative of a source image which is defined by image elements which are encoded on M bits and which are arranged in I rows and J columns. The image is processed by means of M sliding windows (W.sub.1 to W.sub.M) which consist of N rows and P columns and which step-wise slide past each image element along I rows, but which have been shifted through one row with respect to one another. Processing is performed by bit serial operators which successively act on the bits of each of the N+N-1 image elements. The signals may be serially applied via Q contact pads, where Q=N+M-1, or in parallel via Q contact pads where Q is the first multiple of M which is equal to or larger than N+M-1, the integrated circuit then also comprising a parallel to serial converter circuit.

    Abstract translation: 一种用于处理数字化信号的集成电路，其代表源图像，该图像由以M位编码且以I行和J列排列的图像元素定义。 通过由N行和P列组成的M个滑动窗口（W1到WM）处理图像，并且逐步地沿I行经过每个图像元素，但是已经相对于彼此移动了一行 。 处理由连续作用在N + N-1个图像元素中的每一个的位的位串行操作符执行。 信号可以通过Q接触焊盘串联施加，其中Q = N + M-1，或者通过Q接触焊盘并联，其中Q是等于或大于N + M-1的M的第一倍数， 然后电路还包括并行到串行转换器电路。

    Wafer and method of producing a substrate by transfer of a layer that includes foreign species
    5.
    发明授权
    Wafer and method of producing a substrate by transfer of a layer that includes foreign species 有权
    晶片和通过转移包括外来物质的层来生产基板的方法

    公开(公告)号：US07645684B2

    公开(公告)日：2010-01-12

    申请号：US12139609

    申请日：2008-06-16

    Applicant: Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

    Inventor： Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

    IPC: H01L21/30

    CPC classification number: H01L21/76254 ,  H01L21/2258

    Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

    Abstract translation: 一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。 转移层可以包括一种或多种外来物质来改变其性质。 在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为 转入。 然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。 然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。 外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。 优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

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