Abstract:
Disclosed is a wafer processing system, a dual gate system, and methods for operating these systems. The dual gate system may have a shaft, a first gate and a second gate coupled to the shaft at opposite sides thereof, and an actuator coupled to the shaft. The actuator is configured to tilt together the shaft, the first gate, and the second gate to a first sealed gate position or to a second sealed gate position. The actuator can be operated using a pneumatic mechanism, an electro-magnetic mechanism, or a cam follower mechanism.
Abstract:
A substrate processing system includes an equipment front end module (EFEM) coupled to a vacuum-based mainframe, the EFEM including multiple interface openings. The system further includes a batch degas chamber attached to the EFEM at an interface opening of the multiple interface openings. The batch degas chamber includes a housing that is sealed to the interface opening of the EFEM. Within the housing is located a cassette configured to hold multiple substrates. A reactor chamber, attached to the housing, is to receive the cassette and perform an active degas process on the multiple substrates. The active degas process removes moisture and contaminants from surfaces of the multiple substrates. An exhaust line is attached to the reactor chamber to provide an exit for the moisture and contaminants.
Abstract:
Electronic device manufacturing apparatus and robot apparatus are described. The apparatus are configured to efficiently pick and place substrates wherein the robot apparatus includes an upper arm and three blades B1, B2, B3 that are independently rotatable. The three blades are configured to service a first dual load lock and second dual load lock wherein each dual load lock includes a different pitch. In some embodiments, a first pitch P1 is smaller than a second pitch P2. Blades B2 and B3 (or optionally blades B1 and B2) can service the first dual load lock with Pitch P1 and blades B1 and B3 can service the second dual load lock including the second pitch P2. Methods of operating the electronic device manufacturing apparatus and the robot apparatus are provided, as are numerous other aspects.
Abstract:
A transfer chamber for semiconductor device manufacturing includes (1) a plurality of sides that define a region configured to maintain a vacuum level and allow transport of substrates between processing chambers, the plurality of sides defining a first portion and a second portion of the transfer chamber and including (a) a first side that couples to two twinned processing chambers; and (b) a second side that couples to a single processing chamber; (2) a first substrate handler located in the first portion of the transfer chamber; (3) a second substrate handler located in the second portion of the transfer chamber; and (4) a hand-off location configured to allow substrates to be passed between the first portion and the second portion of the transfer chamber using the first and second substrate handlers. Method aspects are also provided.
Abstract:
Methods and apparatus of substrate supports having temperature profile control are provided herein. In some embodiments, a substrate support includes: a plate having a substrate receiving surface and an opposite bottom surface; and a shaft having a first end comprising a shaft heater and a second end, wherein the first end is coupled to the bottom surface. Methods of making a substrate support having temperature profile control are also provided.
Abstract:
Process chamber gas flow control apparatus may include, or be included in, a process chamber configured to process a substrate therein. The gas flow control apparatus may include a valve configured to seal an exhaust port in the process chamber. The valve may be moveable in the X, Y, and Z directions relative to the exhaust port to adjust a gas flow pattern (including, e.g., flow rate and/or flow uniformity) within the process chamber. Methods of adjusting a flow of a process gas within a process chamber are also provided, as are other aspects.
Abstract:
Process chamber gas flow control apparatus having a tiltable valve are disclosed. The gas flow apparatus includes a process chamber adapted to contain a substrate, an exit from the process chamber including a valve seat, and a tiltable valve configured and adapted to tilt relative to the valve seat to control flow non-uniformities within the process chamber. Systems and methods including the tiltable valve apparatus are disclosed, as are numerous other aspects.
Abstract:
Disclosed is a wafer processing system, a dual gate system, and methods for operating these systems. The dual gate system may have a shaft, a first gate and a second gate coupled to the shaft at opposite sides thereof, and an actuator coupled to the shaft. The actuator is configured to tilt together the shaft, the first gate, and the second gate to a first sealed gate position or to a second sealed gate position. The actuator can be operated using a pneumatic mechanism, an electro-magnetic mechanism, or a cam follower mechanism.
Abstract:
Electronic device processing assemblies including an equipment front end module (EFEM) with at least one side storage pod attached thereto are described. The side storage pod has a side storage container. In some embodiments, an exhaust conduit extends between the chamber and a pod plenum that can contain a chemical filter proximate thereto. A supplemental fan may draw purge gas from the pod plenum through the chemical filter and route the gas through a return duct to an upper plenum of the EFEM. Methods and side storage pods in accordance with these and other embodiments are also disclosed.
Abstract:
Electronic device processing systems including an equipment front end module (EFEM) with a side storage pod are described. The EFEM includes an EFEM chamber and a recirculation duct. The side storage pod is fluidly coupled to the recirculation duct. The side storage pod includes an interior chamber and a side storage container disposed within the interior chamber. The side storage container is configured to receive one or more substrates from the EFEM chamber. The electronic device processing system further includes an environmental control system. The environmental control system is configured to circulate a purge gas between the EFEM chamber and the side storage pod via the recirculation duct.