公开(公告)号：US20180080121A1

公开(公告)日：2018-03-22

申请号：US15795768

申请日：2017-10-27

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/7685

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US09803277B1

公开(公告)日：2017-10-31

申请号：US15177195

申请日：2016-06-08

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/7685

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20170098550A1

公开(公告)日：2017-04-06

申请号：US15331366

申请日：2016-10-21

Applicant: ASM IP HOLDING B.V

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US20220178025A1

公开(公告)日：2022-06-09

申请号：US17682058

申请日：2022-02-28

Applicant: ASM IP Holding B.V.

Inventor： Antti Juhani Niskanen

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/52 ,  C23C16/54 ,  C23C16/44

Abstract: A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

公开(公告)号：US10741411B2

公开(公告)日：2020-08-11

申请号：US16143888

申请日：2018-09-27

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US10741386B2

公开(公告)日：2020-08-11

申请号：US16381634

申请日：2019-04-11

Applicant: ASM IP Holding B.V.

Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US10041166B2

公开(公告)日：2018-08-07

申请号：US15795768

申请日：2017-10-27

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20180010247A1

公开(公告)日：2018-01-11

申请号：US15205827

申请日：2016-07-08

Applicant: ASM IP Holding B.V.

Inventor： Antti Juhani Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45553

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US09576792B2

公开(公告)日：2017-02-21

申请号：US14855261

申请日：2015-09-15

Applicant: ASM IP Holding B.V.

Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Abstract translation: 提供了形成氮化硅膜的方法和前体。 在一些实施例中，氮化硅可以通过原子层沉积（ALD）沉积，例如等离子体增强的ALD。 在一些实施例中，沉积的氮化硅可以用等离子体处理。 等离子体处理可以是氮等离子体处理。 在一些实施方案中，用于沉积氮化硅的硅前体包含碘配体。 当沉积到诸如FinFETS或其它类型的多栅极FET的三维结构上时，氮化硅膜可以具有相对均匀的垂直和水平部分的蚀刻速率。 在一些实施方案中，本公开的各种氮化硅膜具有小于具有稀释HF（0.5％）的热氧化物去除速率的一半的蚀刻速率。 在一些实施例中，沉积氮化硅膜的方法包括多步等离子体处理。

公开(公告)号：US09490145B2

公开(公告)日：2016-11-08

申请号：US14628799

申请日：2015-02-23

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

Abstract translation: 从铜表面去除钝化膜的方法可以包括将钝化膜暴露于气相有机反应物，例如在100℃至400℃的温度下。在一些实施例中，钝化膜可以由 铜表面暴露于苯并三唑，例如可能在化学机械平面化过程中发生。 该方法可以作为用于集成电路制造的过程的一部分来执行。 第二材料可以相对于衬底的另一表面选择性地沉积在清洁的铜表面上。