公开(公告)号：US20250066905A1

公开(公告)日：2025-02-27

申请号：US18811842

申请日：2024-08-22

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Charles Dezelah

IPC: C23C16/04 ,  C23C16/12 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: Disclosed are methods and systems for filling a gap. A method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20250011927A1

公开(公告)日：2025-01-09

申请号：US18889542

申请日：2024-09-19

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US12094769B2

公开(公告)日：2024-09-17

申请号：US17530691

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L21/76837 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/76877

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

公开(公告)号：US20240128090A1

公开(公告)日：2024-04-18

申请号：US18530759

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20230324803A1

公开(公告)日：2023-10-12

申请号：US18131279

申请日：2023-04-05

Applicant: ASM IP Holding, B.V.

Inventor： Jan Deckers ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  David Kurt de Roest ,  Kishan Ashokbhai Patel ,  Yoann Tomczak

IPC: G03F7/16 ,  G03F7/075 ,  G03F7/40 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0757 ,  G03F7/40 ,  G03F7/0042

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

公开(公告)号：US20230098575A1

公开(公告)日：2023-03-30

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220165615A1

公开(公告)日：2022-05-26

申请号：US17530691

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

公开(公告)号：US20250051925A1

公开(公告)日：2025-02-13

申请号：US18795263

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: C23C16/56 ,  C23C16/455 ,  C23C16/52 ,  H01L21/3205

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20250014895A1

公开(公告)日：2025-01-09

申请号：US18762752

申请日：2024-07-03

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56

Abstract: This disclosure relates to a method for depositing a layer onto a substrate and a semiconductor processing apparatus. The semiconductor processing apparatus comprises a process chamber comprising a housing defining an inner volume of the process chamber and a plurality of process stations inside the inner volume for holding a substrate. The semiconductor processing apparatus further comprises a plurality of active species generators comprising at least a first active species generator configured to provide first active species to at least one or more first process stations of the plurality of process stations and a second active species generator configured to provide second active species to at least one or more second process stations of the plurality of process stations.

公开(公告)号：US20240363358A1

公开(公告)日：2024-10-31

申请号：US18647931

申请日：2024-04-26

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  Charles Dezelah ,  René Henricus Jozef Vervuurt

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01L21/02321 ,  H01L21/02337

Abstract: Methods for chemically etching a target layer are disclosed. In particular, methods for etching a target layer by cyclical chemical vapor etching processes and atomic layer etching processes are disclosed. Exemplary apparatus for performing chemical etching processes are further disclosed.