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公开(公告)号：US11635698B2
公开(公告)日：2023-04-25
申请号：US16959736
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Yichen Zhang , Sarathi Roy
Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
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公开(公告)号：US11599027B2
公开(公告)日：2023-03-07
申请号：US17520803
申请日：2021-11-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Hans Erik Kattouw , Valerio Altini , Bearrach Moest
Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.
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公开(公告)号：US11422476B2
公开(公告)日：2022-08-23
申请号：US17061641
申请日：2020-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Wim Tjibbo Tel , Frank Staals , Leon Martin Levasier
Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
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公开(公告)号：US11249404B2
公开(公告)日：2022-02-15
申请号：US16619821
申请日：2018-05-18
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Rene Marinus Gerardus Johan Queens , Wolfgang Helmut Henke , Wim Tjibbo Tel , Theodorus Franciscus Adrianus Maria Linschoten
IPC: G03F9/00
Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.
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公开(公告)号：US10962886B2
公开(公告)日：2021-03-30
申请号：US16067303
申请日：2016-12-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans Van Der Laan , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/20 , G06F30/398 , H01L21/66
Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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Patent Agency Ranking
公开(公告)号：US20200211819A1
公开(公告)日：2020-07-02
申请号：US16730848
申请日：2019-12-30
Applicant: ASML Netherlands B.V.
Inventor： Hermanus Adrianus DILLEN , Wim Tjibbo Tel , Willem Louis Van Mierlo
Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.
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公开(公告)号：US10133191B2
公开(公告)日：2018-11-20
申请号：US15325716
申请日：2015-07-15
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo Tel , Frank Staals , Paul Christiaan Hinnen , Reiner Maria Jungblut
Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.
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公开(公告)号：US10078273B2
公开(公告)日：2018-09-18
申请号：US15121340
申请日：2014-12-17
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Wolfgang Henke , Christopher Prentice , Frank Staals , Wim Tjibbo Tel
CPC classification number: G03F7/70641 , G03F7/70725 , G03F9/7019 , G03F9/7026 , G03F9/7092
Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.
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公开(公告)号：US10025193B2
公开(公告)日：2018-07-17
申请号：US15109784
申请日：2014-10-23
Applicant: ASML Netherlands B.V.
Inventor： Hakki Ergün Cekli , Xing Lan Liu , Daan Maurits Slotboom , Wim Tjibbo Tel , Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren
Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.
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公开(公告)号：US12124179B2
公开(公告)日：2024-10-22
申请号：US17920014
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Hermanus Adrianus Dillen , Marc Jurian Kea , Roy Werkman , Weitian Kou
IPC: G03F9/00
CPC classification number: G03F9/7023 , G03F9/7088
Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
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