公开(公告)号：US20220389580A1

公开(公告)日：2022-12-08

申请号：US17835482

申请日：2022-06-08

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Joseph AuBuchon ,  Zhejun Zhang

IPC: C23C16/455 ,  H01J37/32

Abstract: Embodiments of this disclosure relate to methods for depositing gapfill materials by a plasma ALD cycle including a plasma deactivation outside of and near the top of the substrate feature. Some embodiments of the disclosure relate to methods for filling reentrant features without void formation. In some embodiments, the gapfill material comprises one or more of silicon nitride and titanium nitride.

公开(公告)号：US11220747B2

公开(公告)日：2022-01-11

申请号：US16658396

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677

Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

公开(公告)号：US10787739B2

公开(公告)日：2020-09-29

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US20200131635A1

公开(公告)日：2020-04-30

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US20200066572A1

公开(公告)日：2020-02-27

申请号：US16664406

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

公开(公告)号：US20190332129A1

公开(公告)日：2019-10-31

申请号：US16396684

申请日：2019-04-27

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US09252024B2

公开(公告)日：2016-02-02

申请号：US13897327

申请日：2013-05-17

Applicant: Applied Materials, Inc.

Inventor： Hyman Lam ,  Nicholas R. Denny ,  Joseph AuBuchon ,  Mei Chang

IPC: C23C16/00 ,  H01L21/3205 ,  C23C16/48 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C16/482 ,  H01L21/67115 ,  H01L21/76862

Abstract: Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.

Abstract translation: 描述了用于处理半导体晶片的装置和方法，使得膜可以沉积在晶片上，并且膜可以被UV处理，而不需要将晶片移动到单独的处理位置。 该装置和方法包括通过惰性气体流与活性气体隔离的窗口。

公开(公告)号：US11923233B2

公开(公告)日：2024-03-05

申请号：US16910540

申请日：2020-06-24

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Tejas Ulavi

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68792 ,  C23C16/45544 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/6833 ,  H01L21/68735

Abstract: Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A seal band within a pocket of a substrate support defines an inner pocket region and an outer pocket region. The seal band has a pressure dependent controlled leakage rate so that a backside gas flow to the inner pocket region can diffuse through the seal band to the outer pocket region to create an edge purge while providing backside pressure to the substrate. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

公开(公告)号：US11761083B2

公开(公告)日：2023-09-19

申请号：US17025405

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/02

CPC classification number: C23C16/45557 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/0228 ,  H01L21/67253

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US20230230830A1

公开(公告)日：2023-07-20

申请号：US18125509

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  H01L21/02186 ,  H01L21/0217 ,  C23C16/45542 ,  H01L21/02205 ,  H01L21/02274 ,  C23C16/34 ,  H01L21/02211

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.