公开(公告)号：US20220068935A1

公开(公告)日：2022-03-03

申请号：US17522448

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US20200286897A1

公开(公告)日：2020-09-10

申请号：US16804226

申请日：2020-02-28

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US10559578B2

公开(公告)日：2020-02-11

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/285 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/822

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US20190338417A1

公开(公告)日：2019-11-07

申请号：US16515585

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/40 ,  C23C16/455

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

公开(公告)号：US10358719B2

公开(公告)日：2019-07-23

申请号：US15814863

申请日：2017-11-16

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/26 ,  C01F7/02

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

公开(公告)号：US20180240755A1

公开(公告)日：2018-08-23

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US20180076020A1

公开(公告)日：2018-03-15

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/02074 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US09685371B2

公开(公告)日：2017-06-20

申请号：US14482601

申请日：2014-09-10

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

IPC: H01L21/768 ,  H01L21/20 ,  H01L21/203 ,  H01L21/14 ,  H01L21/285 ,  C23C16/18

CPC classification number: H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US09169556B2

公开(公告)日：2015-10-27

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/08 ,  C23C16/14 ,  C23C16/50 ,  C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US09017776B2

公开(公告)日：2015-04-28

申请号：US13625229

申请日：2012-09-24

Applicant: Applied Materials, Inc.

Inventor： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC: H05H1/24 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

Abstract translation: 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。