公开(公告)号：US10395916B2

公开(公告)日：2019-08-27

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US20190214229A1

公开(公告)日：2019-07-11

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L21/285 ,  H01L27/02

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32788 ,  H01J37/32972 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28518 ,  H01L27/0203 ,  H01L27/10

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US10256144B2

公开(公告)日：2019-04-09

申请号：US15498024

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Feiyue Ma ,  Yu Lei ,  Kai Wu ,  Mehul B. Naik ,  Zhiyuan Wu ,  Vikash Banthia ,  Hua Al

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.

公开(公告)号：US20180145034A1

公开(公告)日：2018-05-24

申请号：US15817985

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Feiyue Ma ,  Yu Lei ,  Kazuya Daito ,  Vikash Banthia ,  Kai Wu ,  Jenn Yue Wang ,  Mei Chang

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/528 ,  H01L21/285

Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

公开(公告)号：US11355391B2

公开(公告)日：2022-06-07

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Feiyue Ma ,  Kai Wu ,  Yu Lei ,  Kazuya Daito ,  Yi Xu ,  Vikash Banthia ,  Mei Chang ,  He Ren ,  Raymond Hoiman Hung ,  Yakuan Yao ,  Avgerinos V. Gelatos ,  David T. Or ,  Jing Zhou ,  Guoqiang Jian ,  Chi-Chou Lin ,  Yiming Lai ,  Jia Ye ,  Jenn-Yue Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US10861676B2

公开(公告)日：2020-12-08

申请号：US15912404

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.

公开(公告)号：US09947578B2

公开(公告)日：2018-04-17

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Yu Lei ,  Vikash Banthia ,  Kai Wu ,  Xinyu Fu ,  Yi Xu ,  Kazuya Daito ,  Feiyue Ma ,  Pulkit Agarwal ,  Chi-Chou Lin ,  Dien-Yeh Wu ,  Guoqiang Jian ,  Wei V. Tang ,  Jonathan Bakke ,  Mei Chang ,  Sundar Ramamurthy

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/311 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/505 ,  C23C16/54

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20180076020A1

公开(公告)日：2018-03-15

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/02074 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US10854426B2

公开(公告)日：2020-12-01

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US10727119B2

公开(公告)日：2020-07-28

申请号：US16252100

申请日：2019-01-18

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Feiyue Ma ,  Yu Lei ,  Kai Wu ,  Mehul B. Naik ,  Zhiyuan Wu ,  Vikash Banthia ,  Hua Ai

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.