公开(公告)号：US20220107558A1

公开(公告)日：2022-04-07

申请号：US17552513

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: G03F1/24

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US11237473B2

公开(公告)日：2022-02-01

申请号：US16801642

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: G03F1/24

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US20210333703A1

公开(公告)日：2021-10-28

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US20210272785A1

公开(公告)日：2021-09-02

申请号：US17316883

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C22C9/04 ,  C22C9/06 ,  B23K15/00 ,  B23K1/20 ,  B23K1/00 ,  B23K1/19 ,  C23C14/54

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US11037769B2

公开(公告)日：2021-06-15

申请号：US16867878

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C22C9/04 ,  C22C9/06 ,  B23K15/00 ,  B23K1/20 ,  B23K1/00 ,  B23K1/19 ,  C23C14/54 ,  B23K103/12

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US20200277698A1

公开(公告)日：2020-09-03

申请号：US16801642

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/04 ,  C23C14/16 ,  H01L21/02

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US20200266039A1

公开(公告)日：2020-08-20

申请号：US16867878

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/54 ,  B23K1/19 ,  B23K15/00 ,  B23K1/00 ,  B23K1/20 ,  C22C9/06 ,  C22C9/04 ,  C23C14/35 ,  C23C14/34

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US20200241409A1

公开(公告)日：2020-07-30

申请号：US16750586

申请日：2020-01-23

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/22 ,  C23C14/34 ,  H01J37/34

Abstract: Physical vapor deposition target assemblies, PVD chambers including target assemblies and methods of manufacturing EUV mask blanks using such target assemblies are disclosed. The target assembly includes a target shield adjacent the target and surrounding the peripheral edges of the target, the target shield comprising an insulating material and a non-insulating outer peripheral fixture to secure the target shield to the assembly.

公开(公告)号：US10685821B2

公开(公告)日：2020-06-16

申请号：US15680975

申请日：2017-08-18

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C22C9/04 ,  C22C9/06 ,  B23K15/00 ,  B23K1/20 ,  B23K1/00 ,  B23K1/19 ,  C23C14/54 ,  B23K103/12

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US11860528B2

公开(公告)日：2024-01-02

申请号：US17129077

申请日：2020-12-21

Applicant: Applied Materials, Inc.

Inventor： Ribhu Gautam ,  Vibhu Jindal ,  Sanjay Bhat ,  Praveen Kumar Choragudi ,  Vinodh Ramachandran ,  Arun Rengaraj

IPC: H01L21/67 ,  G03F1/24 ,  H01L21/687 ,  B65G47/90 ,  C23C14/06 ,  C23C14/56 ,  C23C14/58 ,  C23C14/35

CPC classification number: G03F1/24 ,  B65G47/90 ,  C23C14/0641 ,  C23C14/35 ,  C23C14/566 ,  C23C14/568 ,  C23C14/5806 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/68707 ,  H01L21/68742 ,  H01L21/68764

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.