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公开(公告)号：US11815809B2
公开(公告)日：2023-11-14
申请号：US17209707
申请日：2021-03-23
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Azeddine Zerrade , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.
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公开(公告)号：US20220236634A1
公开(公告)日：2022-07-28
申请号：US17160844
申请日：2021-01-28
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).
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公开(公告)号：US11275300B2
公开(公告)日：2022-03-15
申请号：US16502749
申请日：2019-07-03
Applicant: Applied Materials, Inc.
Inventor： Sai Abhinand , Shuwei Liu , Hui Ni Grace Fong , Ke Chang , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.
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公开(公告)号：US11249389B2
公开(公告)日：2022-02-15
申请号：US16777188
申请日：2020-01-30
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
IPC: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and antimony.
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公开(公告)号：US20210124253A1
公开(公告)日：2021-04-29
申请号：US17077170
申请日：2020-10-22
Applicant: Applied Materials, Inc.
Inventor： Herng Yau Yoong , Wen Xiao , Vibhu Jindal , Shuwei Liu , Sanjay Bhat , Azeddine Zerrade
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.
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Patent Agency Ranking
公开(公告)号：US20200371429A1
公开(公告)日：2020-11-26
申请号：US16877962
申请日：2020-05-19
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and tellurium.
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公开(公告)号：US20200371428A1
公开(公告)日：2020-11-26
申请号：US16877955
申请日：2020-05-19
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from boron and nickel.
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公开(公告)号：US20200371424A1
公开(公告)日：2020-11-26
申请号：US16877948
申请日：2020-05-19
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and hafnium.
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公开(公告)号：US11675263B2
公开(公告)日：2023-06-13
申请号：US17370406
申请日：2021-07-08
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Vibhu Jindal
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.
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公开(公告)号：US11609490B2
公开(公告)日：2023-03-21
申请号：US17063783
申请日：2020-10-06
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Vibhu Jindal
IPC: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
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