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    MULTI-WAFER BASED LIGHT ABSORPTION APPARATUS AND APPLICATIONS THEREOF
    22.
    发明申请
    MULTI-WAFER BASED LIGHT ABSORPTION APPARATUS AND APPLICATIONS THEREOF 有权
    基于多波长的光吸收装置及其应用

    公开(公告)号：US20170025454A1

    公开(公告)日：2017-01-26

    申请号：US15219200

    申请日：2016-07-25

    Applicant: Artilux Corporation

    Inventor： Szu-Lin Cheng ,  Han-Din Liu ,  Shu-Lu Chen ,  Yun-Chung Na ,  Hui-Wen Chen

    IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02

    CPC classification number: H01L31/1812 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0549 ,  H01L31/107 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547

    Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

    Abstract translation: 这里介绍的结构和技术使得能够使用典型的半导体器件制造技术来设计和制造光电检测器（PD）和/或其他电子电路，同时减少对PD性能的不利影响。 这里引入的各种结构和技术的实例包括但不限于：前PD均匀晶片结合技术，pre-PD异种晶片结合技术，后PD晶片结合技术，它们的组合和多个反射镜 配备PD结构。 通过引入的结构和技术，可以使用典型的直接生长材料外延技术实现PD，同时减少由晶格失配引起的材料界面处的缺陷层的不利影响。

    WIDE SPECTRUM OPTICAL SENSOR
    28.
    发明申请
    WIDE SPECTRUM OPTICAL SENSOR 有权
    宽光谱光传感器

    公开(公告)号：US20170062508A1

    公开(公告)日：2017-03-02

    申请号：US15248618

    申请日：2016-08-26

    Applicant: Artilux Corporation

    Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

    IPC: H01L27/146 ,  H01L31/028 ,  H01L31/105 ,  H01L31/103 ,  H01L27/144 ,  H01L31/0352

    CPC classification number: H01L27/14647 ,  H01L27/1443 ,  H01L27/14652 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/105 ,  H02S40/44

    Abstract: An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

    Abstract translation: 一种包括半导体衬底的光学传感器; 形成在所述半导体衬底中的第一光吸收区，所述第一光吸收区被配置为吸收第一波长范围的光子并从所吸收的光子产生光载流子; 形成在所述第一光吸收区上的第二光吸收区，所述第二光吸收区被配置为吸收第二波长范围的光子并从所吸收的光子产生光载流子; 以及耦合到所述第二光吸收区域的传感器控制信号，所述传感器控制信号被配置为提供至少第一控制电平和第二控制电平。

    Germanium-silicon light sensing apparatus
    29.
    发明授权
    Germanium-silicon light sensing apparatus 有权

    公开(公告)号：US10269838B2

    公开(公告)日：2019-04-23

    申请号：US15895932

    申请日：2018-02-13

    Applicant: Artilux Corporation

    Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

    IPC: H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

    Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

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