DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20230111185A1

    公开(公告)日:2023-04-13

    申请号:US17769937

    申请日:2021-05-21

    Abstract: The present disclosure provides a display substrate and a display device. The display substrate includes a pixel circuit, and the pixel circuit includes a light-emitting element, a driving circuit and a capacitor circuit. The driving circuit is configured to drive the light-emitting element to emit light; a first terminal of the capacitor circuit is electrically connected to a control terminal of the driving circuit, and a second terminal of the capacitor circuit is electrically connected to a data writing-in node; the capacitor circuit includes at least two capacitors connected in parallel with each other.

    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND ARRAY SUBSTRATE AND DISPLAY DEVICE USING THE SAME
    25.
    发明申请
    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND ARRAY SUBSTRATE AND DISPLAY DEVICE USING THE SAME 有权
    制造薄膜晶体管,薄膜晶体管和阵列基板的方法和使用其的显示器件

    公开(公告)号:US20170040342A1

    公开(公告)日:2017-02-09

    申请号:US14911213

    申请日:2015-07-20

    Abstract: The present disclosure relates to the field of display technology and provides a method for manufacturing a TFT, the TFT, an array substrate including the TFT, and a display device. The method includes steps of forming a pattern of a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, and forming patterns of a source electrode and a drain electrode arranged above the gate insulation layer. The method further includes forming an antioxidation metal protection layer on a surface or surfaces of the gate electrode, the source electrode and/or the drain electrode.

    Abstract translation: 本公开涉及显示技术领域,并且提供了制造TFT,TFT,包括TFT的阵列基板和显示装置的方法。 该方法包括以下步骤:在基底基板上形成栅极电极的图案,在基底基板上形成栅极绝缘层,以及形成设置在栅极绝缘层上方的源电极和漏电极的图案。 该方法还包括在栅电极,源电极和/或漏电极的表面上形成抗氧化金属保护层。

    ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
    26.
    发明申请
    ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE 有权
    阵列基板及其制造方法及显示装置

    公开(公告)号:US20160329352A1

    公开(公告)日:2016-11-10

    申请号:US14892067

    申请日:2015-04-20

    Abstract: An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a thin film transistor (TFT 10) provided on a base substrate (01), a first passivation layer (200) provided on the thin film transistor (TFT 10), and a transparent electrode layer (300) provided on a surface of the first passivation layer (200). The first passivation layer (300) includes: a first sub-thin film layer (210), and a second sub-thin film layer (211) which is provided on a surface of the first sub-thin film layer (210) and in contact with the transparent electrode layer (300); and a film density of the second sub-thin film layer (211) is greater than that of the first sub-thin film layer (210).

    Abstract translation: 提供阵列基板及其制造方法以及显示装置。 阵列基板包括:设置在基底基板(01)上的薄膜晶体管(TFT 10),设置在薄膜晶体管(TFT 10)上的第一钝化层)和设置在薄膜晶体管上的透明电极层 第一钝化层(200)的表面。 第一钝化层(300)包括:第一亚薄膜层(210)和设置在第一亚薄膜层(210)的表面上的第二亚薄膜层(211) 与透明电极层(300)接触; 并且第二亚薄膜层(211)的膜密度大于第一亚薄膜层(210)的膜密度。

    METHOD FOR FABRICATING ARRAY SUBSTRATE
    27.
    发明申请
    METHOD FOR FABRICATING ARRAY SUBSTRATE 有权
    用于制作阵列基板的方法

    公开(公告)号:US20160211284A1

    公开(公告)日:2016-07-21

    申请号:US14347833

    申请日:2013-04-22

    Inventor: Fangzhen ZHANG

    Abstract: Embodiments of the invention provides a method for fabricating an array substrate comprising: forming, on a substrate, at least two semiconductor active islands, first patterns positioned on both sides of each of the semiconductor active islands, second patterns positioned at outer side of a part of the first patterns, and third patterns positioned at outer side of the rest of the first patterns, through a single patterning process; doping a semiconductor at the second patterns for once to form a semiconductor of a first conductivity type; and doping a semiconductor at the third patterns for once to form a semiconductor of a second conductivity type.

    Abstract translation: 本发明的实施例提供一种制造阵列衬底的方法,包括:在衬底上形成至少两个半导体活性岛,位于每个半导体活性岛的两侧的第一图案,位于部分的外侧的第二图案 的第一图案和位于其余第一图案的外侧的第三图案通过单个图案化工艺; 以第二图案掺杂半导体一次以形成第一导电类型的半导体; 并且以第三图案掺杂半导体一次以形成第二导电类型的半导体。

    METHOD FOR PATTERNING A GRAPHENE LAYER AND METHOD FOR MANUFACTURING A DISPLAY SUBSTRATE
    29.
    发明申请
    METHOD FOR PATTERNING A GRAPHENE LAYER AND METHOD FOR MANUFACTURING A DISPLAY SUBSTRATE 有权
    用于绘制石墨层的方法和用于制造显示基板的方法

    公开(公告)号:US20150357239A1

    公开(公告)日:2015-12-10

    申请号:US14513324

    申请日:2014-10-14

    Abstract: The invention provides a method for patterning a graphene layer and a method for manufacturing a display substrate. The method for patterning a graphene layer comprises: forming an isolation layer on a graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned photoresist layer to form a patterned graphene layer; and removing the patterned isolation layer. In the method of the invention, the unfavorable condition of the prior art may be avoided that a graphene film sloughs off or a photoresist remains on a graphene film when a photoresist material is peeled off, and the product yield can be improved in the case that the production cost is controlled.

    Abstract translation: 本发明提供一种用于图案化石墨烯层的方法和用于制造显示基板的方法。 图案化石墨烯层的方法包括:在石墨烯层上形成隔离层; 在隔离层上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 根据图案化的光致抗蚀剂层蚀刻隔离层以形成图案化隔离层; 根据图案化的光致抗蚀剂层蚀刻石墨烯层以形成图案化的石墨烯层; 并去除图案化隔离层。 在本发明的方法中,可以避免现有技术的不利条件,当光致抗蚀剂材料被剥离时,石墨烯薄膜脱落或光致抗蚀剂残留在石墨烯薄膜上,并且在以下情况下可提高产品产率: 生产成本受到控制。

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