Abstract:
A stator lead retainer includes a stator lead retainer body having a plurality of through-holes extending longitudinally therethrough, each through-hole configured for receiving a stator lead. The stator lead body is constructed from an elastic material and is operable to accommodate stator leads of different cross-sectional shapes and diameters.
Abstract:
A wavelength converting material including a wavelength converting activator and a scatter is provided. The wavelength converting activator is suitable for being activated by a light with a wavelength λ1, so as to emit a light with a wavelength λ2. The scatter is disposed on the wavelength converting activator. The scatter is suitable for scattering a first light and a second light irradiated to a surface thereof. As a result of that the scatters on the wavelength converting activators increases the gap of two wavelength converting activators adjacent to each other, the wavelength converting activators could be sufficiently activated for emitting a light with wavelength λ2 while the wavelength converting materials are irradiated by the light with λ1. Therefore, the brightness of a light emitting diode with the wavelength converting material is enhanced.
Abstract:
A stator lead retainer includes a stator lead retainer body having a plurality of through-holes extending longitudinally therethrough, each through-hole configured for receiving a stator lead. The stator lead body is constructed from an elastic material and is operable to accommodate stator leads of different cross-sectional shapes and diameters.
Abstract:
A light module comprises a light unit, a heat transferring plate or a plurality of heat transferring pipes, and a plurality of heat dissipating fins. The heat transferring plate or heat transferring pipes are positioned on the bottom surface of the light unit to transfer heat generated by the light unit. When the heat transferring plate is used, the heat dissipating fins are arranged under the heat transferring plate and perpendicular to the bottom surface of the heat transferring plate. The heat dissipating fins have a recess for the accommodation of the heat transferring plate and the light unit. When the heat transferring pipes are used, the heat dissipating fins each contact the heat transferring pipes. Uniform heat dissipation is thus attained.
Abstract:
A method of manufacturing a low temperature polysilicon film is provided. A first metal layer is formed on a substrate; and openings have been formed in the first metal layer. A second metal layer is formed on the first metal layer: and a hole corresponding to each of the openings is formed in the second metal layer. A silicon layer is formed on the second metal layer; a silicon seed is formed on the substrate inside each of the holes. After removing the first and the second metal layers, an amorphous silicon layer is formed on the substrate by using the silicon seed. Then a laser crystallization step is performed to form a polysilicon layer from the amorphous layer. Since the position of the silicon seed can be controlled, the size and distribution of the silicon grain and the number of the silicon crystal interface can also be controlled.
Abstract:
A light module comprises a light unit, a heat transferring plate or a plurality of heat transferring pipes, and a plurality of heat dissipating fins. The heat transferring plate or heat transferring pipes are positioned on the bottom surface of the light unit to transfer heat generated by the light unit. When the heat transferring plate is used, the heat dissipating fins are arranged under the heat transferring plate and perpendicular to the bottom surface of the heat transferring plate. The heat dissipating fins have a recess for the accommodation of the heat transferring plate and the light unit. When the heat transferring pipes are used, the heat dissipating fins each contact the heat transferring pipes. Uniform heat dissipation is thus attained.
Abstract:
An LED module and method of packing the same are provided. The LED module includes a substrate with at least one cavity therein, at least one LED unit positioned on portions of the substrate in the cavity, a circuit positioned above the LED unit and electrically connected to the LED unit, and a first capsulation material filling within the cavity.
Abstract:
A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and lightly doped drains (LDD) of the NLTPS TFT are formed. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.
Abstract:
A detector and method for detecting intensity of ultraviolet (UV) rays are disclosed. The detector has a plurality of UV photo-diodes for detecting intensities of UV rays within different wave bands, an A/D converter for converting analog output signals of the UV photo-diodes into corresponding digital signals, and a micro-controller for controlling operations of the detector. Each of the wave bands overlaps at least one of the other wave bands. The micro-controller calculates the intensity of each overlapped wave band according to the digital signals.
Abstract:
A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical cone shape and a remaining photoresist layer. The dielectric layer is thus exposed in the lightly doped area. Specially, the bottom width of the first gate is narrower than that of the first metal layer and the symmetrical cone shape is gradually thinner from bottom to top. Using the gate as a mask, an n−-ion implantation is performed to form a self-aligned and symmetrical LDD region in a semiconductor layer without additional photolithography steps.