公开(公告)号：US20060091403A1

公开(公告)日：2006-05-04

申请号：US10906573

申请日：2005-02-24

Applicant: Chih-Chin Chang ,  Teng-Huei Huang ,  Chien-Lung Lee

Inventor： Chih-Chin Chang ,  Teng-Huei Huang ,  Chien-Lung Lee

IPC: H01L33/00 ,  H01L29/06 ,  H01L23/02 ,  H01L31/12 ,  H01L29/22

CPC classification number: H01L33/642 ,  H01L33/486 ,  H01L33/641 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An LED module and method of packing the same are provided. The LED module includes a substrate with at least one cavity therein, at least one LED unit positioned on portions of the substrate in the cavity, a circuit positioned above the LED unit and electrically connected to the LED unit, and a first capsulation material filling within the cavity.

Abstract translation: 提供LED模块及其包装方法。 LED模块包括其中具有至少一个空腔的衬底，位于空腔中的衬底的部分上的至少一个LED单元，位于LED单元上方并电连接到LED单元的电路，以及填充在LED单元内的第一封装材料 空腔。

公开(公告)号：US06777169B2

公开(公告)日：2004-08-17

申请号：US10193013

申请日：2002-07-09

Applicant: Ying-Diean Hwang ,  Chih-Chin Chang

Inventor： Ying-Diean Hwang ,  Chih-Chin Chang

IPC: H01L2100

CPC classification number: H01J9/025

Abstract: A method of forming emitter tips for use in a field emission display. A dielectric layer, an insulating layer, and a conductor layer are formed on a substrate in sequence. An annular groove is formed the conductive layer and the insulating layer. A tip cavity with an insulating tip within is formed by isotropic wet etching. A molybdenum metal layer is formed on the insulating tip. The method of the present invention can substantially reduce the consumption of molybdenum.

Abstract translation: 一种形成用于场致发射显示器的发射器尖端的方法。 依次在基板上形成电介质层，绝缘层和导体层。 环形槽形成为导电层和绝缘层。 通过各向同性湿蚀刻形成具有绝缘尖端的尖端腔。 在绝缘尖端上形成钼金属层。 本发明的方法可以显着降低钼的消耗。

公开(公告)号：US20070117290A1

公开(公告)日：2007-05-24

申请号：US11625825

申请日：2007-01-23

Applicant: Chien-Shen Wung ,  Mao-Yi Chang ,  Chih-Chin Chang

Inventor： Chien-Shen Wung ,  Mao-Yi Chang ,  Chih-Chin Chang

IPC: H01L21/84

CPC classification number: C23C16/24 ,  C23C16/02

Abstract: A method of manufacturing a low temperature polysilicon film is provided. A first metal layer is formed on a substrate; and openings have been formed in the first metal layer. A second metal layer is formed on the first metal layer: and a hole corresponding to each of the openings is formed in the second metal layer. A silicon layer is formed on the second metal layer; a silicon seed is formed on the substrate inside each of the holes. After removing the first and the second metal layers, an amorphous silicon layer is formed on the substrate by using the silicon seed. Then a laser crystallization step is performed to form a polysilicon layer from the amorphous layer. Since the position of the silicon seed can be controlled, the size and distribution of the silicon grain and the number of the silicon crystal interface can also be controlled.

Abstract translation: 提供一种制造低温多晶硅膜的方法。 第一金属层形成在基板上; 并且在第一金属层中形成开口。 在第一金属层上形成第二金属层，并且在第二金属层中形成与每个开口对应的孔。 在第二金属层上形成硅层; 在每个孔内的基板上形成硅晶种。 在去除第一和第二金属层之后，通过使用硅晶种在衬底上形成非晶硅层。 然后进行激光结晶步骤以从非晶层形成多晶硅层。 由于可以控制硅晶粒的位置，所以可以控制硅晶粒的尺寸和分布以及硅晶界面的数量。

公开(公告)号：US20050090045A1

公开(公告)日：2005-04-28

申请号：US10904516

申请日：2004-11-15

Applicant: Chih-Chin Chang

Inventor： Chih-Chin Chang

IPC: H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78618

Abstract: A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and lightly doped drains (LDD) of the NLTPS TFT are formed. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.

Abstract translation: 一种形成自对准低温多晶硅薄膜晶体管（LTPS TFT）的方法。 首先，在衬底上形成N型LTPS TFT（NLTPS TFT）和P型LTPS TFT（PLTPS TFT）的有源层，并在衬底上形成栅极绝缘（GI）层。 然后，形成NLTPS TFT的源电极，漏电极和轻掺杂漏极（LDD）。 此外，在栅极绝缘层上形成有NLTPS TFT的栅电极和PLTPS TFT。 最后，PLTPS TFT的栅电极用于在PLTPS TFT的有源层中形成源电极和漏电极。

公开(公告)号：US07479733B2

公开(公告)日：2009-01-20

申请号：US11160287

申请日：2005-06-17

Applicant: Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

Inventor： Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

IPC: H01J1/62

CPC classification number: C09K11/7774 ,  H01L33/502 ,  H01L33/56 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

Abstract: An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of WmMon(Y,Ce,Tb,Gd,Sc)3+t+u(Al,Ga,Tl,In,B)5+u+2v(O,S,Se)12+2t+3u+3v+3m+3n: Ce3+, Tb3+, wherein 0

Abstract translation: 提供了包括载体，LED芯片，密封剂和PL材料的LED封装结构，其中LED芯片设置在载体上用于发光。 密封剂封装了LED芯片。 PL材料分布在密封剂中。 PL材料适合于被LED芯片发出的光激发并散射光线。 此外，本发明提供了分子式为WmMon（Y，Ce，Tb，Gd，Sc）3 + t + u（Al，Ga，Tl，In，B）5 + u + 2v（O ，S，Se）12 + 2t + 3u + 3v + 3m + 3n：Ce3 +，Tb3 +，其中0

公开(公告)号：US20080224096A1

公开(公告)日：2008-09-18

申请号：US12129644

申请日：2008-05-29

Applicant: Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

Inventor： Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

IPC: C09K11/78 ,  C09K11/88 ,  C09K11/84 ,  C01F17/00 ,  C09K11/80

CPC classification number: C09K11/7774 ,  H01L33/502 ,  H01L33/56 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

Abstract: An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of WmMon(Y,Ce,Tb,Gd,Sb)3+t+u(Al,Ga,Tl,In,B)5+u+2v(O,S,Se)12+2t+3u+3v+3m+3n:Ce3+,Tb3+, wherein 0

Abstract translation: 提供了包括载体，LED芯片，密封剂和PL材料的LED封装结构，其中LED芯片设置在载体上用于发光。 密封剂封装了LED芯片。 PL材料分布在密封剂中。 PL材料适合于被LED芯片发出的光激发并散射光线。 此外，本发明提供了具有分子式为W m（n，Ce，Tb，Gd，Sb）3 + t的新型PL材料 （O，S，Se）12 + 2t + 3u + 3v + 3m + 3n（O，S，Se）12 + 2t + 3u + 3v + 3m + 3n 其中0

公开(公告)号：US20060274524A1

公开(公告)日：2006-12-07

申请号：US10908977

申请日：2005-06-02

Applicant: Chih-Chin Chang ,  Teng-Huei Huang ,  Chien-Lung Lee

Inventor： Chih-Chin Chang ,  Teng-Huei Huang ,  Chien-Lung Lee

IPC: F21V9/00

CPC classification number: H01L33/648 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012

Abstract: Disclosed herein is a light module comprising a substrate, at least one light-emitting element on the substrate, a sealing cap on the substrate and covering the light-emitting elements, and a fluid in the space formed among the sealing cap, the light-emitting elements, and the substrate, such that heat dissipation is fast and yellowing of the encapsulating material is retarded.

Abstract translation: 这里公开了一种光模块，其包括基板，基板上的至少一个发光元件，基板上的密封盖和覆盖发光元件，以及形成在密封盖之间的空间中的流体， 发光元件和基板，使得散热快速且封装材料变黄延迟。

公开(公告)号：US20060214562A1

公开(公告)日：2006-09-28

申请号：US11160287

申请日：2005-06-17

Applicant: Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

Inventor： Chih-Chin Chang ,  Hsiang-Cheng Hsieh ,  Teng-Huei Huang

IPC: H01J1/62

CPC classification number: C09K11/7774 ,  H01L33/502 ,  H01L33/56 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

Abstract: An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of WmMon(Y,Ce,Tb,Gd,Sc)3+t+u(Al,Ga,Tl,In,B)5+u+2v(O,S,Se)12+2t+3u+3v+3m+3n: Ce3+, Tb3+, wherein 0

Abstract translation: 提供了包括载体，LED芯片，密封剂和PL材料的LED封装结构，其中LED芯片设置在载体上用于发光。 密封剂封装了LED芯片。 PL材料分布在密封剂中。 PL材料适合于被LED芯片发出的光激发并散射光线。 此外，本发明提供了具有分子式为W m（n，Ce，Tb，Gd，Sc）3 + t的新型PL材料 （O，S，Se）12 + 2t + 3u + 3v + 3m + 3n（O，S，Se）12 + 2t + 3u + 3v + 3m + 3n 其中0

公开(公告)号：US20060152139A1

公开(公告)日：2006-07-13

申请号：US10908189

申请日：2005-05-02

Applicant: Hsiang-Cheng Hsieh ,  Chih-Chin Chang ,  Teng-Huei Huang ,  Tse-Min Mao

Inventor： Hsiang-Cheng Hsieh ,  Chih-Chin Chang ,  Teng-Huei Huang ,  Tse-Min Mao

IPC: H01J1/62 ,  H01L33/00

CPC classification number: C09K11/7774 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/14 ,  H01L2924/00014

Abstract: A wavelength converting substance comprises a wavelength converting material particle and a transparent layer on the wavelength converting material particle. The wavelength converting substance is a material possessing both wavelength converting and light scattering properties. Thus, when the wavelength converting substance is used in a light emitting device, the brightness is improved and the light mixing is more uniform than that of a traditional package. A light emitting device and an encapsulating material comprising the wavelength converting substance are also disclosed.

Abstract translation: 波长转换物质包括波长转换材料颗粒和波长转换材料颗粒上的透明层。 波长转换物质是具有波长转换和光散射性质的材料。 因此，当在发光器件中使用波长转换物质时，亮度提高，并且光混合比传统封装更加均匀。 还公开了一种发光器件和包含波长转换物质的封装材料。

公开(公告)号：US07053421B2

公开(公告)日：2006-05-30

申请号：US10707443

申请日：2003-12-15

Applicant: Chih-Chin Chang

Inventor： Chih-Chin Chang

IPC: H01L33/00

CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/12041 ,  H05K3/3442 ,  H05K2201/10106 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) mainly includes a surface mounted package. The surface mounted package includes a substrate, two composite metal layers positioned on the substrate and being insulated from each other, an LED chip electrically connected to the composite metal layers, and a sealing member covering the LED chip. Each of the composite metal layers has a silver layer for preventing solder paste from penetrating into space between the sealing member and the composite metal layers and for reflecting light beams generated by the LED chip.

Abstract translation: 发光二极管（LED）主要包括表面安装的封装。 表面安装封装包括基板，位于基板上并彼此绝缘的两个复合金属层，电连接到复合金属层的LED芯片和覆盖LED芯片的密封构件。 复合金属层中的每一层具有银层，用于防止焊膏渗透到密封构件和复合金属层之间的空间中，并且用于反射由LED芯片产生的光束。