Abstract:
A micromechanical component in which lateral deformations, i.e., deformations of the component parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component. The component structure includes at least one bellows-like structure in which lateral deformations of the component are concentrated. A pressure sensor having a micromechanical component of this type may be used, for example, for measured-value detection.
Abstract:
A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.
Abstract:
The invention refers to a thermoplastic polyurethane produced from at least an organic diisocyanate and a compound which is reactive toward isocyanates, wherein the polyurethane comprises the ester of a tricarboxylic acid with at least one alcohol and wherein all acid groups of the tricarboxylic acid are esterified with an alcohol. The invention further refers to a process for producing the respective polyurethane, products comprising this thermoplastic polyurethane and the use of the ester of a tricarboxylic acid as plasticizer in thermoplastic polyurethanes.
Abstract:
A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.
Abstract:
This invention relates to tablets especially tablets formed by direct compression of a dipeptidylpeptidase IV (DPP-IV) inhibitor compound, a process for the preparation thereof, to new pharmaceutical formulations, and new tableting powders comprising DPP-IV inhibitor formulations capable of being directly compressed into tablets. The invention relates further to a process for preparing the tablets by blending the active ingredient and specific excipients into the new formulations and then directly compressing the formulations into the direct compression tablets. The invention also relates to vildagliptin particle size distribution and a new crystal form of vildagliptin particularly adapted for the preparation of improved tablets and other pharmaceutical compositions.
Abstract:
The invention relates to a method for the preparation of an application buffer for the purification of proteins by means of immobilized metal ion affinity chromatography (IMAC) under denaturing conditions, which is characterized in that a defined amount of a buffer concentrate having a defined pH value is mixed with a defined amount of a urea concentrate, whereby an application buffer having a defined pH value is provided. According to the invention, a corresponding kit is provided in addition. The components are stable in storage and by mixing produce an application buffer having a defined composition and a defined pH value. The need for pH adjustment or a new preparation is eliminated. The invention can thus be used in an automated manner and as a closed kit concept.
Abstract:
The present invention relates to a process for the synthesis of (S)-2′[2-1-(methyl-2-piperidyl) ethyl] cinnamanilide (I) or salts or pharmaceutically acceptable prodrugs thereof:
Abstract:
A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.
Abstract:
A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure.A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.
Abstract:
A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.