公开(公告)号：US10025107B2

公开(公告)日：2018-07-17

申请号：US15432442

申请日：2017-02-14

Applicant: Gerald Ho Kim

Inventor： Gerald Ho Kim

IPC: G02B27/10 ,  G02B5/18

Abstract: Examples of combining multiple laser beams into a single laser beam by using a circular or spiral diffraction grating are described. The multiple laser beams can be combined coherently or incoherently depending on the geometrical layout of the laser beams.

公开(公告)号：US20170303431A1

公开(公告)日：2017-10-19

申请号：US15640596

申请日：2017-07-03

Applicant: Gerald Ho Kim

Inventor： Gerald Ho Kim

IPC: H05K7/20 ,  H05K7/02 ,  H01L23/473 ,  H01L23/373 ,  H01L23/14

CPC classification number: H05K7/20254 ,  H01L23/147 ,  H01L23/3738 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/14 ,  H05K1/0212 ,  H05K7/023 ,  H05K7/20272 ,  H05K7/20636 ,  H01L2924/00

Abstract: Examples of a silicon cold plate with an integrated PCB are described. An apparatus may include a silicon plate, one or more electrical and thermal connections, and a heat-generating device. The silicon plate may include a first side and a second side opposite the first side, a plurality of edges between the first side and the second side, one or more internal coolant flow channels therein, one or more coolant inlet ports disposed on one or more of the edges and configured to allow a coolant to flow into the one or more internal coolant flow channels, and one or more coolant outlet ports disposed on one or more of the edges and configured to allow the coolant to flow out of the one or more internal coolant flow channels. The one or more electrical and thermal connections may be disposed on the first side of the silicon plate. The heat-generating device may be disposed on the one or more electrical and thermal connections.

公开(公告)号：US09502740B2

公开(公告)日：2016-11-22

申请号：US14987744

申请日：2016-01-04

Applicant: Gerald Ho Kim

Inventor： Gerald Ho Kim

IPC: H01L23/427 ,  H01L23/04 ,  H01L23/367 ,  H01L23/373 ,  H01M10/6551 ,  H01M10/6569 ,  H01L23/00

CPC classification number: H01M10/6551 ,  H01L23/04 ,  H01L23/3738 ,  H01L23/4275 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01M2/1016 ,  H01M10/613 ,  H01M10/6569 ,  H01M2220/20 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of an apparatus with a thermal management technique utilizing a silicon heat sink and/or a phase-change material, as well as an assembling method thereof, are described. In one aspect, the apparatus comprises a main unit, a phase-change material and an enclosure enclosing the main unit and the phase-change material. The main unit comprises a substrate and at least one heat-generating device disposed on the substrate. The phase-change material is in direct contact with each heat-generating device of the at least one heat-generating device to absorb and dissipate heat generated by the at least one heat-generating device.

Abstract translation: 描述了利用硅散热器和/或相变材料的热管理技术的装置的实施例及其组装方法。 一方面，该装置包括主单元，相变材料和封闭主单元和相变材料的外壳。 主单元包括基板和设置在基板上的至少一个发热元件。 相变材料与至少一个发热装置的每个发热装置直接接触，以吸收和散发由至少一个发热装置产生的热量。

公开(公告)号：US20150289408A1

公开(公告)日：2015-10-08

申请号：US14742615

申请日：2015-06-17

Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

IPC: H05K7/20 ,  H01L25/16 ,  H01L23/373 ,  H01S5/022 ,  H01S5/183 ,  H01L23/367 ,  H01L31/024 ,  H01S5/024

CPC classification number: H05K7/2039 ,  F28F21/065 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/3738 ,  H01L25/167 ,  H01L31/024 ,  H01L2924/0002 ,  H01S5/02248 ,  H01S5/02469 ,  H01S5/183 ,  H01L2924/00

Abstract: Various embodiments of an apparatus that simultaneously cools and thermally decouples adjacent electrically-driven devices in close proximity are provided. In one aspect, an apparatus comprises a first non-silicon heat sink and a first silicon-based heat sink disposed on the first non-silicon heat sink. The first silicon-based heat sink is configured to receive a first electrically-driven device on a first portion of the first silicon-based heat sink and to receive a second electrically-driven device on a second portion of the first silicon-based heat sink. The first silicon-based heat sink includes a first groove or a first opening between the first portion and the second portion such that a heat conduction path between the first electrically-driven device and the first non-silicon heat sink through the first silicon-based heat sink is shorter than a heat conduction path between the first electrically-driven device and the second electrically-driven device through the first silicon-based heat sink.

Abstract translation: 提供了一种同时冷却并使邻近的电驱动装置热解耦的装置的各种实施例。 一方面，一种装置包括第一非硅散热器和设置在第一非硅散热器上的第一硅基散热器。 第一硅基散热器被配置为在第一硅基散热器的第一部分上接收第一电驱动装置，并且在第一硅基散热片的第二部分上接收第二电驱动装置 。 第一硅基散热器包括在第一部分和第二部分之间的第一凹槽或第一开口，使得第一电驱动装置和第一非硅散热器之间的热传导路径穿过第一硅基散热片 散热器比通过第一硅基散热器的第一电驱动装置和第二电驱动装置之间的热传导路径短。

公开(公告)号：US20150257249A1

公开(公告)日：2015-09-10

申请号：US14507806

申请日：2014-10-06

Applicant: Gerald Ho Kim

Inventor： Gerald Ho Kim

IPC: H05K1/02 ,  H05K7/20 ,  H05K5/04

CPC classification number: H05K7/2029 ,  F28F3/048 ,  H01L23/13 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/467 ,  H01L29/0657 ,  H01L2924/0002 ,  H05K1/0204 ,  H05K1/0206 ,  H05K1/0209 ,  H05K5/03 ,  H05K5/04 ,  H05K2201/066 ,  H05K2201/09054 ,  H01L2924/00

Abstract: Embodiments of a thermal management unit and an electronic apparatus utilizing the thermal management unit are described. In one aspect, the thermal management unit includes a heat sink. The heat sink includes a base portion, a first protrusion structure and a second protrusion structure. The base portion has a first side and a second side opposite the first side. The first protrusion structure protrudes from the first side of the base portion, and includes multiple fins. The second protrusion structure protrudes from the second side of the base portion, and includes multiple ribs. The heat sink may be made of silicon.

Abstract translation: 描述了使用热管理单元的热管理单元和电子设备的实施例。 一方面，热管理单元包括散热器。 散热器包括基部，第一突出结构和第二突起结构。 基部具有与第一侧相对的第一侧和第二侧。 第一突出结构从基部的第一侧突出，并且包括多个翅片。 第二突出结构从基部的第二侧突出，并且包括多个肋。 散热器可以由硅制成。

公开(公告)号：US08916765B2

公开(公告)日：2014-12-23

申请号：US13844724

申请日：2013-03-15

Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

IPC: H01L31/052 ,  H01L31/042

CPC classification number: H01L31/042 ,  H01L31/035281 ,  H01L31/0521 ,  H02S40/22 ,  H02S40/44 ,  Y02E10/52 ,  Y02E10/60

Abstract: A low cost design for a concentrated photovoltaic (CPV) solar cell device is developed with a 3-D solar cell structure that eliminates the need for sun-ray tracking and with improved electricity conversion efficiency for cooling solar cells. The 3-D solar cell structure can be built with conventional monocrystalline or polycrystalline silicon or with multi-junction III-V solar material, joining two or more solar cell segments perpendicular to a base solar cell. This structure is able to collect all incident sunlight from sunrise to sunset.

Abstract translation: 利用3-D太阳能电池结构开发了集中光伏（CPV）太阳能电池器件的低成本设计，消除了对太阳能电池跟踪的需求，并提高了用于冷却太阳能电池的电力转换效率。 3-D太阳能电池结构可以用常规单晶硅或多晶硅或多结III-V太阳能材料制成，连接两个或更多个太阳能电池片段，其垂直于基极太阳能电池。 这种结构能够从日出到日落收集所有入射的阳光。

公开(公告)号：US20140269798A1

公开(公告)日：2014-09-18

申请号：US14270255

申请日：2014-05-05

Applicant: Gerald Ho Kim

Inventor： Gerald Ho Kim

IPC: H01S5/024

CPC classification number: H01S5/02423 ,  H01S3/025 ,  H01S3/0407 ,  H01S3/042 ,  H01S3/0604 ,  H01S3/0606 ,  H01S5/024

Abstract: Embodiments of silicon-based thermal energy transfer apparatus for a gain medium of a laser system are provided. In one aspect, a silicon-based thermal energy transfer apparatus includes silicon-based first and second manifolds each having internal coolant flow channels therein. When the first and second manifolds are coupled together, a first groove on the first manifold and a second groove on the second manifold form a through hole configured to receive the gain medium therein. The through hole has a polygonal cross section when viewed along a longitudinal axis of the gain medium.

Abstract translation: 提供了一种用于激光系统的增益介质的硅基热能转移装置的实施例。 一方面，硅基热能转移装置包括硅基第一和第二歧管，每个歧管在其中具有内部冷却剂流动通道。 当第一和第二歧管联接在一起时，第一歧管上的第一凹槽和第二歧管上的第二凹槽形成用于在其中接纳增益介质的通孔。 当沿着增益介质的纵向轴线观察时，通孔具有多边形横截面。

公开(公告)号：US20140014161A1

公开(公告)日：2014-01-16

申请号：US13546237

申请日：2012-07-11

Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

IPC: H01L31/052 ,  H01L31/058 ,  H01L31/042

CPC classification number: H01L31/042 ,  H01L31/035281 ,  H01L31/0521 ,  H02S40/22 ,  H02S40/44 ,  Y02B10/20 ,  Y02B10/70 ,  Y02E10/52 ,  Y02E10/60

Abstract: A concentrated photovoltaic device that is capable of generating thermal and electrical energy from solar radiation using a three-dimensional solar cell design structure with no need for a sun-tracking system is provided. The three-dimensional solar cell structure uses liquid cooling to provide maximum energy utilization from both stored thermal and electrical solar energy.

Abstract translation: 提供了能够使用三维太阳能电池设计结构从太阳辐射产生热能和电能的集中光电器件，而不需要太阳跟踪系统。 三维太阳能电池结构使用液体冷却从存储的热和电太阳能提供最大的能量利用。

公开(公告)号：US20140003056A1

公开(公告)日：2014-01-02

申请号：US13888153

申请日：2013-05-06

Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

IPC: F21V29/00 ,  F21V5/04 ,  F28F21/00

CPC classification number: F21V29/70 ,  F21V5/043 ,  F28F21/00 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/4031

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Abstract translation: 提供了一种有助于散发来自诸如边缘发射激光二极管等发热装置的热能的硅基热能转移装置。 一方面，该装置包括基部和支撑部。 基部由硅制成并包括第一主表面。 第一主表面至少包括第一和第二V形凹槽。 支撑部分由硅制成并且当支撑部分安装在基部上时，至少包括第一和第二边缘，该第一边缘和第二边缘互锁地容纳在第一和第二V形凹槽中。

公开(公告)号：US20140000856A1

公开(公告)日：2014-01-02

申请号：US13844003

申请日：2013-03-15

Applicant: Gerald Ho Kim ,  Jay Eunjae Kim

Inventor： Gerald Ho Kim ,  Jay Eunjae Kim

IPC: F28F3/02

CPC classification number: F28F3/02 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/4031

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a silicon-based base portion having a first primary surface and a silicon-based support structure. The silicon-based support structure includes a mounting end and a distal end opposite the mounting end with the mounting end received by the base portion such that the support structure extends from the first primary surface of the base portion. The support structure includes a recess defined therein to receive the edge-emitting laser diode. The support structure further includes a slit connecting the distal end and the recess to expose at least a portion of a light-emitting edge of the edge-emitting laser diode when the edge-emitting laser diode is received in the support structure.

Abstract translation: 提供了一种有助于散发来自诸如边缘发射激光二极管等发热装置的热能的硅基热能转移装置。 在一个方面，该装置包括具有第一主表面和硅基支撑结构的硅基基部。 硅基支撑结构包括安装端和与安装端相对的远端，其中安装端由基部部分容纳，使得支撑结构从基部的第一主表面延伸。 支撑结构包括限定在其中的凹部以接收边缘发射激光二极管。 所述支撑结构还包括连接所述远端和所述凹部的狭缝，以在所述边缘发射激光二极管被接收在所述支撑结构中时露出所述边缘发射激光二极管的发光边缘的至少一部分。