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公开(公告)号：US20230246418A1
公开(公告)日：2023-08-03
申请号：US18023773
申请日：2021-06-07
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tatsuo DOUGAKIUCHI
CPC classification number: H01S5/143 , H01S5/3401 , H01S5/02415
Abstract: The external cavity laser module includes a quantum cascade laser element, a MEMS diffraction grating, a support plate having a first surface on which the quantum cascade laser element and the MEMS diffraction grating are disposed and a second surface opposite to the first surface, and a cooling element disposed on a side facing the second surface of the support plate to overlap with the quantum cascade laser element and the MEMS diffraction grating. In the second surface of the support plate, a concave portion recessed in a direction from the second surface toward the first surface is provided in at least a region overlapping with the quantum cascade laser element and the MEMS diffraction grating when viewed from the thickness direction. At least a portion of the cooling element facing the support plate is inserted into the concave portion.
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公开(公告)号：US20230130363A1
公开(公告)日：2023-04-27
申请号：US17914508
申请日：2021-03-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Shinichi FURUTA , Tadataka EDAMURA
IPC: H01S5/34
Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include a ridge portion configured to include an active layer having a quantum-cascade structure; an embedding layer including a first portion formed on a side surface of the ridge portion, and a second portion extending from an edge portion of the first portion on a side of the semiconductor substrate along a width direction of the semiconductor substrate; a metal layer formed on a top surface of the ridge portion, on the first portion, and on the second portion; and a dielectric layer disposed between the second portion and the metal layer. The dielectric layer is formed such that a part of the second portion is exposed from the dielectric layer. The metal layer is in contact with the second portion at the part.
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公开(公告)号：US20230117347A1
公开(公告)日：2023-04-20
申请号：US17914456
申请日：2021-03-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Shinichi FURUTA
Abstract: A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion along a width direction of a semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the first portion has a first inclined surface inclined with respect to the side surface to go away from the side surface as going away from the semiconductor substrate, and a second inclined surface located opposite to the semiconductor substrate with respect to the first inclined surface and inclined with respect to a center line to approach the center line as going away from the semiconductor substrate. The metal layer extends over the first inclined surface and the second inclined surface.
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公开(公告)号：US20210351570A1
公开(公告)日：2021-11-11
申请号：US17313389
申请日：2021-05-06
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuue FUJITA , Masahiro HITAKA , Atsushi SUGIYAMA , Kousuke SHIBATA
Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.
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公开(公告)号：US20150117484A1
公开(公告)日：2015-04-30
申请号：US14520500
申请日：2014-10-22
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tadataka EDAMURA , Naota AKIKUSA
IPC: H01S5/34
CPC classification number: H01S5/3401 , H01S5/0207 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0286 , H01S5/0287 , H01S5/22 , H01S5/34
Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.
Abstract translation: 量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及 包括活性层的条纹状脊部。 此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面 在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。
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Patent Agency Ranking
公开(公告)号：US20250158352A1
公开(公告)日：2025-05-15
申请号：US18947169
申请日：2024-11-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tadataka EDAMURA
IPC: H01S5/0239 , H01S5/023 , H01S5/14 , H01S5/34
Abstract: The laser module includes a housing with a bottom wall on which a mount member is placed, and accommodates a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and the mount member. The mount member includes a first mounting section for mounting the first lens holder, a second mounting section for mounting the QCL element and a temperature sensor, a third mounting section for mounting the second lens holder, and a fourth mounting section for mounting the diffraction grating unit. At least a second surface of the second mounting section facing the bottom wall is fixed to the bottom wall via a medium having a higher thermal conductivity than air and filled between the second surface and the bottom wall.
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27.发明公开公开(公告)号：US20230246422A1
公开(公告)日：2023-08-03
申请号：US18077355
申请日：2022-12-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA
CPC classification number: H01S5/3401 , H01S5/2031 , H01S5/204 , H01S5/0064 , G02B1/115
Abstract: A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate including an active layer and having a first end surface and a second end surface facing each other in an optical waveguide direction; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a central wavelength of 7.5 μm or more. The anti-reflection film includes at least one of at least one layer of a CeO2 film formed by continuous sputtering and vacuum evaporation and a plurality of layers of CeO2 films formed by discrete sputtering and vacuum evaporation.
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公开(公告)号：US20230142086A1
公开(公告)日：2023-05-11
申请号：US17914828
申请日：2021-03-26
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Kousuke SHIBATA , Takahide OCHIAI
CPC classification number: H01S5/028 , H01S5/3401
Abstract: A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include an active layer having a quantum cascade structure and to have a first end surface and a second end surface facing each other in a light waveguide direction; a first electrode; a second electrode; an insulating film continuously formed from the second end surface to a region on a second end surface side of at least one surface of a surface on an opposite side of the first electrode from the semiconductor laminate and a surface on an opposite side of the second electrode from the semiconductor substrate; and a metal film formed on the insulating film to cover at least the active layer when viewed in the light waveguide direction. An outer edge of the metal film does not reach the one surface when viewed in the light waveguide direction.
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29.发明申请公开(公告)号：US20230092813A1
公开(公告)日：2023-03-23
申请号：US17945271
申请日：2022-09-15
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tadataka EDAMURA
IPC: H01S5/14 , H01S5/02326 , H01S5/34
Abstract: The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The fourth mounting portion of the mount member is provided with a placement hole into which the protruding portion of the diffraction grating unit is inserted. The placement hole is longer than the protruding portion so that the protruding portion can be slid in the X-axis direction relative to the placement hole. A wall surface for positioning the diffraction grating unit is provided between the third mounting portion and the fourth mounting portion. The diffraction grating unit includes a positioning surface facing the wall surface. The diffraction grating unit is fixed to the fourth mounting portion in a state where the protruding portion is inserted into the placement hole and the positioning surface is in surface contact with the wall surface.
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公开(公告)号：US20220337033A1
公开(公告)日：2022-10-20
申请号：US17675197
申请日：2022-02-18
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi SUGIYAMA , Tadataka EDAMURA , Naota AKIKUSA
Abstract: An external resonance-type laser module includes: a quantum cascade laser; a MEMS diffraction grating including a movable portion capable of swinging around an axis and a diffraction grating portion formed on the movable portion; and a lens. The diffraction grating portion includes a plurality of lattice grooves arranged in a first direction and each of the plurality of lattice grooves extends in a second direction perpendicular to the first direction. The MEMS diffraction grating is disposed such that a normal line of the diffraction grating portion is inclined with respect to an end surface and the first direction is along a lamination direction of a laminated structure when viewed in a direction perpendicular to the end surface. A length of the diffraction grating portion in the first direction exceeds a length of the diffraction grating portion in the second direction.
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