Active matrix image sensing panel and apparatus
    21.
    发明授权
    Active matrix image sensing panel and apparatus 有权
    主动矩阵图像感应面板及装置

    公开(公告)号:US09276025B2

    公开(公告)日:2016-03-01

    申请号:US14166357

    申请日:2014-01-28

    Abstract: An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

    Abstract translation: 有源矩阵图像感测面板包括基板和图像感测像素。 图像感测像素设置在基板上,并且包括扫描线,与扫描线交叉的数据线,感光元件和TFT元件。 感光元件包括第一端子电极和第二端子电极,并且第一端子电极的电压高于第二端子电极的电压。 TFT元件包括第一电极,第二电极,第一栅电极和第二栅电极。 第一电极与数据线电连接,第二电极与第一端子电极电连接,第一栅电极与扫描线电连接,第二栅极电连接到第一或第二端子电极 。 还公开了一种有源矩阵图像感测装置。

    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY THEREOF AND MANUFACTURING METHOD THEREOF
    22.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY THEREOF AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管基板,其显示及其制造方法

    公开(公告)号:US20140027761A1

    公开(公告)日:2014-01-30

    申请号:US13941805

    申请日:2013-07-15

    Inventor: Cheng-Hsu Chou

    Abstract: A thin film transistor substrate includes a substrate and a plurality of thin film transistors. The thin film transistor includes a first electrode layer, a first insulating layer, an oxide semiconductor layer, a second electrode layer and a second insulating layer. The first electrode layer with gate portions is formed on the substrate. The first insulating layer covers the first electrode layer. The oxide semiconductor layer is formed on the first insulating layer, and the oxide semiconductor layer comprises a first boundary. The second electrode layer with drain portions and source portions is formed on the oxide semiconductor layer, wherein the drain portion and the corresponding source are corresponding gate portion, and the drain portion comprises a second boundary. The second insulating layer covers the oxide semiconductor layer and the second electrode layer. The second boundary is within the first boundary. The second electrode layer includes copper.

    Abstract translation: 薄膜晶体管基板包括基板和多个薄膜晶体管。 薄膜晶体管包括第一电极层,第一绝缘层,氧化物半导体层,第二电极层和第二绝缘层。 具有栅极部分的第一电极层形成在基板上。 第一绝缘层覆盖第一电极层。 氧化物半导体层形成在第一绝缘层上,氧化物半导体层包括第一边界。 具有漏极部分和源极部分的第二电极层形成在氧化物半导体层上,其中漏极部分和对应的源极是对应的栅极部分,而漏极部分包括第二边界。 第二绝缘层覆盖氧化物半导体层和第二电极层。 第二个边界在第一个边界内。 第二电极层包括铜。

    Electronic device
    23.
    发明授权

    公开(公告)号:US12166033B2

    公开(公告)日:2024-12-10

    申请号:US17513865

    申请日:2021-10-28

    Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

    Display device
    24.
    发明授权

    公开(公告)号:US12094983B2

    公开(公告)日:2024-09-17

    申请号:US17504759

    申请日:2021-10-19

    CPC classification number: H01L29/78696 H01L29/78618

    Abstract: A display device is provided. The display device includes a substrate, a channel layer, a first metal layer, and a second metal layer. The channel layer is disposed on the substrate and includes a first channel layer and a second channel layer. The first metal layer is disposed on the channel layer and includes a first gate and a second gate. The second metal layer is disposed over the first metal layer and includes a first source, a first drain, and a second source. The first gate, the first source, the first drain, and the first channel layer form a first transistor. The second gate, the second source, the first drain, and the second channel layer form a second transistor. The first transistor and the second transistor are connected in parallel.

    Driving circuit of active-matrix organic light-emitting diode with hybrid transistors

    公开(公告)号:US11450273B2

    公开(公告)日:2022-09-20

    申请号:US17131881

    申请日:2020-12-23

    Abstract: A driving circuit includes a first transistor having a first terminal, a second terminal and a control terminal; a second transistor having a first terminal connected to the second terminal of the first transistor and a second terminal connected to an organic light-emitting diode; a third transistor having a first terminal connected to the control terminal of the first transistor; a fourth transistor having a first terminal connected to the first terminal of the first transistor; and a fifth transistor having a first terminal connected to the second terminal of the second transistor. The first transistor, the second transistor and the fourth transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.

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