公开(公告)号：US09159619B2

公开(公告)日：2015-10-13

申请号：US14065695

申请日：2013-10-29

Applicant: Jochen Reinmuth ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

Inventor： Jochen Reinmuth ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

IPC: H01L21/00 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  B81C1/00

CPC classification number: H01L21/76898 ,  B81C1/00095 ,  H01L21/7682 ,  H01L23/481 ,  H01L2224/13 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method for producing an electrical feedthrough in a substrate having an electrical feedthrough, including: forming an etch stop layer on the front side of the substrate; forming a mask on the back side of the substrate; forming an annular trench in the substrate, which trench extends from the back to the front side, by an etching process that stops at the etch stop layer, using the mask, the trench surrounding a substrate punch; depositing a metal layer over the back side of the substrate using the mask, the metal layer penetrating into the annular trench and being deposited on the substrate punch; forming a metal silicide layer on the substrate punch by at least partially converting the metal layer into the metal silicide layer on the substrate punch; selectively removing a remainder of the metal layer; and closing off the annular trench at the back side of the substrate.

Abstract translation: 一种用于在具有电馈通的基板中制造电馈通的方法，包括：在所述基板的正面上形成蚀刻停止层; 在基板的背面形成掩模; 在所述衬底中形成环形沟槽，所述沟槽通过使用所述掩模在所述蚀刻停止层处停止所述沟槽围绕衬底冲头的所述沟槽从所述背面延伸到所述前侧; 使用掩模在衬底的背面上沉积金属层，金属层穿透环形沟槽并沉积在衬底冲头上; 通过至少部分地将所述金属层转化为所述基板冲头上的金属硅化物层而在所述基板冲头上形成金属硅化物层; 选择性地除去金属层的剩余部分; 并且关闭衬底背面的环形沟槽。

公开(公告)号：US09035432B2

公开(公告)日：2015-05-19

申请号：US13915353

申请日：2013-06-11

Applicant: Jochen Reinmuth ,  Heribert Weber ,  Timo Schary ,  Yvonne Bergmann

Inventor： Jochen Reinmuth ,  Heribert Weber ,  Timo Schary ,  Yvonne Bergmann

IPC: H01L29/40 ,  H01L31/00 ,  H01L23/495 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

Abstract translation: 提供了具有带通孔电镀的半导体基板的部件的制造方法，所述贯通电镀被凹部包围，所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层，并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

公开(公告)号：US08752431B2

公开(公告)日：2014-06-17

申请号：US13148038

申请日：2009-12-11

Applicant: Jochen Reinmuth ,  Harald Emmerich

Inventor： Jochen Reinmuth ,  Harald Emmerich

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P2015/0831

Abstract: An acceleration sensor includes a housing, a first seismic mass which is formed as a first asymmetrical rocker and is disposed in the housing via at least one first spring, a second seismic mass which is formed as a second asymmetrical rocker and is disposed in the housing via at least one second spring, and a sensor and evaluation unit which is designed to ascertain information regarding corresponding rotational movements of the first seismic mass and the second seismic mass in relation to the housing and to determine acceleration information with respect to an acceleration of the acceleration sensor, taking the ascertained information into account. In addition, a method for operating an acceleration sensor is disclosed. The rockers execute opposite rotational movements in response to the presence of an acceleration. A differential evaluation of the signals makes it possible to free the measuring signal of any existing interference signals.

Abstract translation: 加速度传感器包括壳体，第一抗震块，其形成为第一不对称摇臂，并且经由至少一个第一弹簧设置在壳体中，第二抗震块形成为第二不对称摇臂并设置在壳体中 经由至少一个第二弹簧以及传感器和评估单元，该传感器和评估单元被设计成确定关于第一地震质量块和第二地震质量块相对于壳体的相应旋转运动的信息，并且确定相对于壳体的加速度的加速度信息 加速度传感器，考虑确定的信息。 此外，公开了一种用于操作加速度传感器的方法。 响应于加速度的存在，摇臂执行相反的旋转运动。 信号的差分评估使得可以释放任何现有干扰信号的测量信号。

公开(公告)号：US08671757B2

公开(公告)日：2014-03-18

申请号：US12872596

申请日：2010-08-31

Applicant: Jochen Reinmuth

Inventor： Jochen Reinmuth

IPC: G01P15/125

CPC classification number: G01P15/0802 ,  B81B3/0051 ,  B81B2201/025 ,  G01P15/125 ,  G01P2015/0831 ,  Y10T29/49826

Abstract: A micromechanical component which has a substrate, a seismic mass, which is deflectably situated on the substrate, and a stop structure for limiting a deflection of the seismic mass in a direction away from the substrate. The stop structure is situated on the substrate and has a limiting section for limiting the deflection of the seismic mass, which is in a plane with the seismic mass. Furthermore, a method for manufacturing a micromechanical component is described.

Abstract translation: 具有衬底，可偏转地位于衬底上的抗震块的微机械部件和用于限制地震质体在远离衬底的方向上的偏转的止挡结构。 止动结构位于基板上，并且具有限制部分，用于限制与地震质量平面的地震质量的偏转。 此外，描述了用于制造微机械部件的方法。

公开(公告)号：US08563344B2

公开(公告)日：2013-10-22

申请号：US13298571

申请日：2011-11-17

Applicant: Jochen Reinmuth ,  Heiko Stahl

Inventor： Jochen Reinmuth ,  Heiko Stahl

IPC: H01L21/00 ,  H01L29/84 ,  G01P15/125

CPC classification number: B81C1/00571 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C2201/014

Abstract: A method for producing microelectromechanical structures in a substrate includes: arranging at least one metal-plated layer on a main surface of the substrate in a structure pattern; leaving substrate webs open beneath a structure pattern region by introducing first trenches into the substrate perpendicular to a surface normal of the main surface in a region surrounding the structure pattern; coating the walls of the first trenches perpendicular to the surface normal of the main surface with a passivation layer; and introducing cavity structures into the substrate at the base of the first trenches in a region beneath the structure pattern region.

Abstract translation: 在基板中制造微机电结构的方法包括：以结构图案在基板的主表面上布置至少一个金属镀层; 通过在围绕结构图案的区域中垂直于主表面的表面法垂直地将第一沟槽引入到衬底中，使衬底腹板打开在结构图案区域下方; 用钝化层涂覆垂直于主表面的法线的第一沟槽的壁; 以及在结构图案区域下方的区域中在第一沟槽的基部处将空腔结构引入衬底。

公开(公告)号：US08299549B2

公开(公告)日：2012-10-30

申请号：US12953086

申请日：2010-11-23

Applicant: Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

Inventor： Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

IPC: H01L29/84

CPC classification number: H01L23/53252 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05669 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48669 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01041 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This layer structure includes at least one noble metal layer, in which at least one bonding island is formed, the noble metal layer being electrically insulated from the substrate of the semiconductor component by at least one dielectric layer, and having at least one ohmic contact between the noble metal layer and an integrated connecting line. The noble metal layer is applied directly on the ohmic contact layer.

Abstract translation: 用于具有集成电路元件的半导体部件和用于电路元件的集成连接线的电接触的层结构，其特别适用于化学侵蚀性环境和高温下，即在所谓的恶劣环境中， 并且实现简单。 该层结构包括至少一个贵金属层，其中形成至少一个结合岛，所述贵金属层通过至少一个电介质层与半导体组件的衬底电绝缘，并且具有至少一个欧姆接触 贵金属层和集成连接线。 贵金属层直接施加在欧姆接触层上。

公开(公告)号：US08252029B2

公开(公告)日：2012-08-28

申请号：US12035165

申请日：2008-02-21

Applicant: Anne Catherine Morancy-Meister ,  Thomas Egli ,  Rosemary Thompson ,  Nicole Gronau ,  Walter Gross ,  Michael Motzko ,  Fabio Bernhardsgrütter ,  Jochen Reinmuth

Inventor： Anne Catherine Morancy-Meister ,  Thomas Egli ,  Rosemary Thompson ,  Nicole Gronau ,  Walter Gross ,  Michael Motzko ,  Fabio Bernhardsgrütter ,  Jochen Reinmuth

IPC: A61B17/70

CPC classification number: A61B17/7065 ,  A61B2017/00557

Abstract: An interspinous process spacer and method of implanting same is provided for maintaining separation between adjacent spinous processes of adjacent vertebrae. The spacer has two lateral portions and a medial portion therebetween, the medial portion adapted to reside between the adjacent superior and inferior spinous processes in the deployed configuration and the lateral portions each comprise a superior lateral portion and an inferior lateral portion adapted to reside on the lateral side of the respective superior and inferior spinous process in the deployed configuration to maintain positioning of the interspinous process spacer between the two adjacent vertebrae. The lateral portions each comprise an expandable lateral member.

Abstract translation: 提供棘突间间隔和植入方法，以保持相邻椎骨的相邻棘突之间的分离。 间隔件具有两个横向部分和其间的中间部分，中间部分适于驻留在展开构造中的相邻上部和下部棘突之间，并且横向部分各自包括上部侧部和下侧部， 相应的上下棘突的侧面在展开的构型中，以保持椎间间隔垫在两个相邻的椎骨之间的定位。 横向部分各自包括可膨胀的横向构件。

公开(公告)号：US20120129291A1

公开(公告)日：2012-05-24

申请号：US13296923

申请日：2011-11-15

Applicant: Heiko Stahl ,  Christina Leinenbach ,  Axel Franke ,  Jochen Reinmuth ,  Ando Feyh ,  Christian Rettig

Inventor： Heiko Stahl ,  Christina Leinenbach ,  Axel Franke ,  Jochen Reinmuth ,  Ando Feyh ,  Christian Rettig

IPC: H01L21/00

CPC classification number: B81C1/00777

Abstract: A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material.

Abstract translation: 对微机械部件的制造方法进行说明。 该方法包括提供具有包括位于基板上的绝缘材料的层系统的基板，与导电层部分连接的导电层部分和保护层结构，其与绝缘材料的一部分相接触。 该方法还包括进行用于去除绝缘材料的一部分，导电层部分和保护层结构的各向同性蚀刻工艺，以防止去除绝缘材料的边界部分; 以及正在开发的结构元件，其包括导电层部分，保护层结构和绝缘材料的边界部分。

公开(公告)号：US20120126346A1

公开(公告)日：2012-05-24

申请号：US13290905

申请日：2011-11-07

Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。

公开(公告)号：US20110296917A1

公开(公告)日：2011-12-08

申请号：US13116759

申请日：2011-05-26

Applicant: Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

Inventor： Jochen Reinmuth ,  Ralf Boessendoerfer ,  Axel Franke ,  Mirko Hattass

IPC: G01P15/125 ,  H05K3/00 ,  G01B7/06

CPC classification number: G01B7/085 ,  B81B2201/0242 ,  B81C99/0045 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/0831

Abstract: A micromechanical component is described including a substrate having a spacer layer and a test structure for ascertaining the thickness of the spacer layer. The test structure includes a seismic mass, which is elastically deflectable along a measuring axis parallel to the substrate, a first electrode system and a second electrode system for deflecting the seismic mass along the measuring axis, having a mass electrode, which is produced by a part of the seismic mass, and a substrate electrode, which is situated on the substrate in each case, the first electrode system being designed to be thicker than the second electrode system by the layer thickness of the spacer layer.

Abstract translation: 描述了一种微机械部件，其包括具有间隔层的基板和用于确定间隔层的厚度的测试结构。 测试结构包括沿着平行于基板的测量轴线可弹性偏转的地震质量块，用于沿着测量轴偏转地震质量块的第一电极系统和第二电极系统，具有质量电极，其由 地震质量的一部分，以及基板电极，其位于每种情况下的基板上，第一电极系统被设计为比间隔层的层厚度厚于第二电极系统。