公开(公告)号：US10138541B2

公开(公告)日：2018-11-27

申请号：US14424961

申请日：2013-08-23

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Hiroaki Ueda

IPC: C23C14/34 ,  C23C14/08 ,  G06F3/041 ,  C23C14/58 ,  H05K1/02 ,  H05K1/03 ,  H05K3/16 ,  H05K3/38 ,  H05K1/09 ,  H05K3/22

Abstract: A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10−4 Ωcm.

公开(公告)号：US09657386B2

公开(公告)日：2017-05-23

申请号：US15126265

申请日：2015-02-03

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama

IPC: B32B15/00 ,  B05D1/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/56

CPC classification number: C23C14/086 ,  C23C14/0036 ,  C23C14/34 ,  C23C14/562 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04103 ,  H01B1/08

Abstract: A transparent electroconductive film includes a transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy ESn of tin 3d5/2 and a bond energy EIn of indium 3d5/2 as determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies ESn and EIn is present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference ESn−EIn; and a difference Emax−Emin between the maximum value Emax and the minimum value Emin of the bond energy difference is 0.1 eV or more.