-
公开(公告)号:US20200240834A1
公开(公告)日:2020-07-30
申请号:US16832847
申请日:2020-03-27
Inventor: Frode Hveding , Islam Ashry , Mao Yuan , Mohd Sharizal Bin Alias , Boon Siew Ooi , Muhammad Arsalan
Abstract: The subject matter of this specification can be embodied in, among other things, a method that includes separating, from a few mode optical fiber, a collection of backscattered Rayleigh signals based on a vibration of the few mode optical fiber at a vibration frequency at a first location along the few mode optical fiber, separating, from the few mode optical fiber, a collection of backscattered Stokes Raman signals and Anti-Stokes Raman signals based on a temperature of the few mode optical fiber at a second location along the few mode optical fiber, detecting the separated Rayleigh signals and Raman signals, determining, based on detecting the collection of backscattered Rayleigh traces, at least one of the first location, the vibration frequency, and an amplitude of the vibration, and determining, based on the detecting the collection of backscattered Raman signals, the temperature at the second location.
-
22.
公开(公告)号:US20180287333A1
公开(公告)日:2018-10-04
申请号:US15766188
申请日:2016-10-05
Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY , KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
Inventor: Boon Siew Ooi , Chao Shen , Tien Khee Ng , Ahmed Alyamani , Munir Eldesouki
IPC: H01S5/026 , H01S5/32 , H01S5/343 , H01S5/0683 , H01S5/22
Abstract: Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse-biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.
-
23.
公开(公告)号:US12270788B2
公开(公告)日:2025-04-08
申请号:US17637684
申请日:2020-08-21
Inventor: Boon Siew Ooi , Yuan Mao , Islam Ashry
Abstract: An integrated system for detecting a red palm weevil (RPW), farm fire, and soil moisture includes an optical fiber configured to be extending to a tree, and a distributed acoustic sensor (DAS) box connected to the optical fiber. The DAS box is configured to process first to third different optical signals reflected from the optical fiber, to determine a presence of the RPW from the first optical signal, a temperature at a location along the optical fiber from the second optical signals, and a moisture at a location around the tree from the third optical signal.
-
公开(公告)号:US12019200B2
公开(公告)日:2024-06-25
申请号:US16299918
申请日:2019-03-12
Inventor: Frode Hveding , Islam Ashry , Mao Yuan , Mohd Sharizal Bin Alias , Boon Siew Ooi , Muhammad Arsalan
Abstract: The subject matter of this specification can be embodied in, among other things, a method for removing intermodal distortion that includes receiving a collection of distorted backscattered Rayleigh signals from a collection of modes of an optical fiber, where the collection of distorted backscattered Rayleigh signals are distorted by an intermodal coupling among the collection of modes, receiving a collection of distortion parameters that are descriptive of distortion effects of the intermodal coupling, and determining an undistorted backscattered Rayleigh signal based on the collection of distorted backscattered Rayleigh signals and the collection of distortion parameters.
-
公开(公告)号:US11095097B2
公开(公告)日:2021-08-17
申请号:US16464186
申请日:2017-11-28
Inventor: Boon Siew Ooi , Chao Shen , Tien Khee Ng
Abstract: An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.
-
公开(公告)号:US20200292727A1
公开(公告)日:2020-09-17
申请号:US16299918
申请日:2019-03-12
Inventor: Frode Hveding , Islam Ashry , Mao Yuan , Mohd Sharizal Bin Alias , Boon Siew Ooi , Muhammad Arsalan
Abstract: The subject matter of this specification can be embodied in, among other things, a method for removing intermodal distortion that includes receiving a collection of distorted backscattered Rayleigh signals from a collection of modes of an optical fiber, where the collection of distorted backscattered Rayleigh signals are distorted by an intermodal coupling among the collection of modes, receiving a collection of distortion parameters that are descriptive of distortion effects of the intermodal coupling, and determining an undistorted backscattered Rayleigh signal based on the collection of distorted backscattered Rayleigh signals and the collection of distortion parameters.
-
公开(公告)号:US20200149952A1
公开(公告)日:2020-05-14
申请号:US16190302
申请日:2018-11-14
Inventor: Frode Hveding , Islam Ashry , Mao Yuan , Mohd Sharizal Bin Alias , Boon Siew Ooi , Muhammad Arsalan
Abstract: The subject matter of this specification can be embodied in, among other things, a method for remotely sensing vibration includes transmitting a collection of optical pulses through an optical fiber at a predetermined frequency, detecting a collection of backscattered Rayleigh traces from the optical fiber based on a vibration of the optical fiber at a vibration frequency at a location along the optical fiber, determining a normalized differential trace based on the collection of Rayleigh traces, determining, based on the normalized differential trace, the location in the optical fiber of the vibration, and determining, based on the raw Rayleigh traces, the vibration frequency.
-
公开(公告)号:US09755403B2
公开(公告)日:2017-09-05
申请号:US15191826
申请日:2016-06-24
Inventor: Boon Siew Ooi , Abdul Majid Mohammed , Rami Afandy , Ahmad Aljabr
CPC classification number: H01S5/343 , H01S5/3201 , H01S5/34326 , H01S5/34333 , H01S2304/04
Abstract: Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.
-
-
-
-
-
-
-