公开(公告)号：US20120314860A1

公开(公告)日：2012-12-13

申请号：US13577915

申请日：2010-09-20

Applicant: Kai Liu ,  Zhiping Zhang ,  Yongli Zuo ,  Qingpeng Duan ,  Bin Li

Inventor： Kai Liu ,  Zhiping Zhang ,  Yongli Zuo ,  Qingpeng Duan ,  Bin Li

IPC: H04K1/00 ,  H04W4/16

CPC classification number: H04L63/0414 ,  H04M1/575 ,  H04W12/02 ,  H04W12/08 ,  H04W12/12 ,  H04W48/16 ,  H04W76/10

Abstract: The disclosure discloses a method for communication based on pseudo-contact information, which including: when a call is received, acquiring contact information of a calling party, and encrypting the contact information by using a preset encryption algorithm to acquire pseudo-contact information; when the pseudo-contact information does not match locally stored pseudo-contact information, displaying real contact information of the calling party, wherein the locally stored pseudo-contact information represents the pseudo-contact information generated by encrypting the contact information to be stored according to the preset encryption algorithm and locally stored; and when the pseudo-contact information matches the locally stored pseudo-contact information, displaying a substituted contact information generated by substituting a plurality of bits of the real contact information of the calling party with an identifier. The disclosure further discloses another method for communication based on pseudo-contact information and an apparatus for communication based on pseudo-contact information. The disclosure can solve the problems of higher operation complexity and lower safety performance of the method for protecting contact information stored on a terminal mentioned in the related art.

Abstract translation: 本发明公开了一种基于伪联系信息的通信方法，包括：当接收到呼叫时，获取主叫方的联系人信息，并通过使用预设的加密算法对联系人信息进行加密以获取伪联系信息; 当伪接触信息与本地存储的伪接触信息不匹配时，显示主叫方的真实联系人信息，其中本地存储的伪联系信息表示通过加密根据以下内容存储的联系人信息而生成的伪联系信息 预设的加密算法和本地存储; 并且当伪接触信息与本地存储的伪联系信息匹配时，显示通过用标识符代替主叫方的真实联系人信息的多个比特来生成的替代联系人信息。 本公开还公开了另一种基于伪接触信息的通信方法和基于伪接触信息的通信装置。 本公开可以解决用于保护存储在现有技术中提到的终端上的联系人信息的方法的更高的操作复杂性和较低的安全性能的问题。

公开(公告)号：US08323607B2

公开(公告)日：2012-12-04

申请号：US12960666

申请日：2010-12-06

Applicant: Kai Liu ,  Kai-Li Jiang ,  Ying-Hui Sun ,  Shou-Shan Fan

Inventor： Kai Liu ,  Kai-Li Jiang ,  Ying-Hui Sun ,  Shou-Shan Fan

IPC: D01F9/12 ,  D01F9/127

CPC classification number: B82Y40/00 ,  B82B3/0047 ,  B82Y30/00 ,  C01B32/158

Abstract: A carbon nanotube structure includes a number of carbon wires and a number of second carbon nanotubes. Each of the carbon nanotube wires includes a number of first carbon nanotubes joined end to end by the carbon-carbon bonds therebetween. The carbon wires and the carbon nanotubes are joined by van der Waals attractive force therebetween.

Abstract translation: 碳纳米管结构包括多根碳线和多个第二碳纳米管。 每个碳纳米管线包括由它们之间的碳 - 碳键端到端连接的多个第一碳纳米管。 碳线和碳纳米管之间的范德华力吸引力被接合。

公开(公告)号：US20120267843A1

公开(公告)日：2012-10-25

申请号：US13393439

申请日：2010-08-18

Applicant: Ming Gao ,  Zhenxing Zhao ,  Jigang Zhang ,  Kai Liu

Inventor： Ming Gao ,  Zhenxing Zhao ,  Jigang Zhang ,  Kai Liu

IPC: B65H7/06 ,  B65H15/00

CPC classification number: B65H5/062 ,  B65H15/00 ,  B65H2301/333 ,  B65H2405/22 ,  B65H2701/1936

Abstract: The present invention provides a recording medium turnover device and a recording medium processing apparatus using the same. The recording medium turnover device comprises: a passage assembly, configured to form a first passage (3), one end of which is connected with a recording medium inlet (1) and the other end of which is connected with a recording medium outlet (2); a turnover mechanism (4), which is located on one side of the passage assembly and comprises a first plate (41) being located below the outlet and extending away from the outlet and a second plate (42) swingably arranged between the outlet and the inlet and forming a recording medium containing space with the first plate; conveying rollers (411, 424), configured to convey the recording medium; and a guide plate (5), which is controlled to guide the recording medium to enter the first passage or the recording medium containing space of the turnover mechanism. According to the present invention, the first passage and the turnover mechanism can share one power device to convey the recording medium, without switching the position state and the rotating direction of a plurality of mechanisms as in the conventional art, so that the structure of the recording medium turnover device and the control method are simplified, thus the number of power devices is decreased and the cost of devices is reduced.

Abstract translation: 本发明提供了一种记录介质翻转装置和使用其的记录介质处理装置。 记录介质周转装置包括：通道组件，其构造成形成第一通道（3），其一端与记录介质入口（1）连接，另一端与记录介质出口（2 ）; 翻转机构（4），其位于所述通道组件的一侧，并且包括位于所述出口下方并远离所述出口延伸的第一板（41）和可摆动地布置在所述出口和所述出口之间的第二板（42） 入口并形成与第一板容纳空间的记录介质; 输送辊（411,424），其构造成传送记录介质; 和引导板（5），其被控制以引导记录介质进入翻转机构的第一通道或记录介质容纳空间。 根据本发明，如现有技术那样，第一通道和翻转机构可以共享一个动力装置来传送记录介质，而不转换多个机构的位置状态和旋转方向，使得 记录介质周转装置和控制方法简化，功率器件数量减少，器件成本降低。

公开(公告)号：US08268398B2

公开(公告)日：2012-09-18

申请号：US12321570

申请日：2009-01-22

Applicant: Kai Liu ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

Inventor： Kai Liu ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

IPC: C23C16/00

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B2202/08 ,  C23C14/18

Abstract: A method for making a carbon nanotube composite structure, the method comprising the steps of: providing a carbon nanotube structure having a plurality of carbon nanotubes; and forming at least one conductive coating on a plurality of the carbon nanotubes in the carbon nanotube structure to achieve a carbon nanotube composite structure, wherein the conductive coating comprises of a conductive layer.

Abstract translation: 一种制备碳纳米管复合结构的方法，所述方法包括以下步骤：提供具有多个碳纳米管的碳纳米管结构; 以及在所述碳纳米管结构中的多个所述碳纳米管上形成至少一个导电涂层以实现碳纳米管复合结构，其中所述导电涂层包括导电层。

公开(公告)号：US08264084B2

公开(公告)日：2012-09-11

申请号：US11932845

申请日：2007-10-31

Applicant: François Hébert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

Inventor： François Hébert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

IPC: H01L21/60 ,  H01L23/488

CPC classification number: H01L24/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/64 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/37099

Abstract: A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

Abstract translation: 提出了一种焊顶增强型半导体器件进行封装。 焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。 至少一个接触区域电连接到至少一个接触增强区域。 每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。 在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。 用于制造焊料顶部器件的方法包括：a）将顶部金属层的光刻图案化成接触区域和接触增强区域。 b）使用用于增加复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

公开(公告)号：US08246860B2

公开(公告)日：2012-08-21

申请号：US12822308

申请日：2010-06-24

Applicant: Kai Liu ,  Rui-Feng Zhou ,  Ying-Hui Sun ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Kai Liu ,  Rui-Feng Zhou ,  Ying-Hui Sun ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01B1/04

CPC classification number: H01B1/04

Abstract: A carbon nanotube composite includes a free-standing carbon nanotube structure and an amount of reinforcements. The free-standing carbon nanotube structure includes an amount of carbon nanotubes. The reinforcements are located on the carbon nanotubes and combining the carbon nanotubes together.

Abstract translation: 碳纳米管复合材料包括独立的碳纳米管结构和一定量的增强材料。 独立的碳纳米管结构包括一定量的碳纳米管。 增强物位于碳纳米管上并将碳纳米管组合在一起。

公开(公告)号：US08241952B2

公开(公告)日：2012-08-14

申请号：US12713018

申请日：2010-02-25

Applicant: Yaojian Lin ,  Robert C. Frye ,  Pandi Chelvam Marimuthu ,  Kai Liu

Inventor： Yaojian Lin ,  Robert C. Frye ,  Pandi Chelvam Marimuthu ,  Kai Liu

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L23/49816 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/568 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/14133 ,  H01L2224/14135 ,  H01L2224/14163 ,  H01L2224/14165 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/221 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

Abstract: A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.

Abstract translation: 半导体晶片包含半导体晶片。 在模具上形成第一导电层。 在管芯和第一导电层上形成电阻层。 在管芯和电阻层上形成第一绝缘层。 将晶片单片化以分离模具。 模具安装到临时托架上。 密封剂沉积在模具和载体上。 移除载体和密封剂和第一绝缘层的一部分。 在密封剂和第一绝缘层之上形成第二绝缘层。 在第一绝缘层和第二绝缘层上形成第二导电层。 在第二绝缘层和第二导电层上形成第三绝缘层。 在第三绝缘层和第二导电层上形成第三导电层。 在第三绝缘层和第三导电层上形成第四绝缘层。

公开(公告)号：US08227799B2

公开(公告)日：2012-07-24

申请号：US12651146

申请日：2009-12-31

Applicant: Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

Inventor： Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

IPC: H01L29/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  B82Y10/00 ,  H01L29/458 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0558 ,  Y10S977/748 ,  Y10S977/75

Abstract: The present disclosure provides a thin film transistor which includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconducting layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer. At least one of the gate electrode, the drain electrode, the source electrode includes a carbon nanotube composite layer.

Abstract translation: 本公开提供一种薄膜晶体管，其包括源电极，漏电极，半导体层，绝缘层和栅电极。 漏电极与源电极间隔开。 半导体层与源电极和漏电极电连接。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 栅电极，漏电极，源电极中的至少一个包括碳纳米管复合层。

公开(公告)号：US20120168193A1

公开(公告)日：2012-07-05

申请号：US13395103

申请日：2010-05-05

Applicant: Hanming LI ,  Zhijun LI ,  Qianhu Wei ,  Ting Liu ,  Shicong Deng ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Weicai Zhou ,  Kai Liu ,  Yuhua Zhang ,  Xiong Wu ,  Ning Cao ,  Dingxie Gu ,  Peihong Zhou ,  Huiwen He ,  Ying Lou ,  Zhenqiang Li

Inventor： Hanming LI ,  Zhijun LI ,  Qianhu Wei ,  Ting Liu ,  Shicong Deng ,  Feng Huo ,  Ming Zhan ,  Min Dai ,  Weicai Zhou ,  Kai Liu ,  Yuhua Zhang ,  Xiong Wu ,  Ning Cao ,  Dingxie Gu ,  Peihong Zhou ,  Huiwen He ,  Ying Lou ,  Zhenqiang Li

IPC: H01R4/66

CPC classification number: H02G7/20 ,  H01R4/66 ,  H02G1/02 ,  H02G13/00

Abstract: A method for vertically grounding and leading down form an outer side of a composite pole tower and pole tower thereof, wherein the method includes the following steps: extending an upper metal cross arm from an extended line of at least one side of a ground wire cross arm, vertically leading down a ground down-leading wire from a distal end of the upper metal cross arm, connecting the ground down-leading wire to the pole tower via a lower metal cross arm at a distance under a lower lead, and grounding the ground down-leading wire along a tower body of the pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is selectively directly connected to the metal pipe via the lower metal cross arm. The method facilitates in compressing the width of the transmission corridor to a maximum extent as well as designing a lightning protection, preventing the ground down-leading wire from short-circuiting with the tower body, and realizing the insulation function of the composite material tower body. The manner of using unilateral ground down-leading wire saves material, and is economical and simple in structure.

Abstract translation: 一种用于垂直接地和向下的方法形成复合极塔及其极塔的外侧，其中该方法包括以下步骤：从地线交叉的至少一侧的延伸线延伸上金属横臂 从上金属横臂的远端垂直向下引导地面下降的导线，通过下导线下方一段距离的下金属横臂将地下导线连接到极塔，并将 沿着塔架的塔体进行地面下降的导线，其中当塔体的下部是金属管时，地下导线通过下金属横臂选择性地直接连接到金属管。 该方法有利于最大程度地压缩传输走廊的宽度，并设计防雷，防止地面引导线与塔体短路，实现复合材料塔体的绝缘功能 。 使用单边地下导线的方式节省材料，结构经济，结构简单。

公开(公告)号：US20120168192A1

公开(公告)日：2012-07-05

申请号：US13395112

申请日：2010-05-05

Applicant: Zhusen Sun ,  Qiang Zhang ,  Minghua Li ,  Zhijun Li ,  Ting Liu ,  Feng Huo ,  Min Dai ,  Kai Liu ,  Xiong Wu ,  Dingxie Gu ,  Peihong Zhou ,  Ying Lou ,  Zhenqiang Li ,  Huiwen He

Inventor： Zhusen Sun ,  Qiang Zhang ,  Minghua Li ,  Zhijun Li ,  Ting Liu ,  Feng Huo ,  Min Dai ,  Kai Liu ,  Xiong Wu ,  Dingxie Gu ,  Peihong Zhou ,  Ying Lou ,  Zhenqiang Li ,  Huiwen He

IPC: H02G7/22 ,  H02G13/00

CPC classification number: H02G7/205 ,  H02G3/0481

Abstract: A method for vertically grounding and leading down form a center of a composite pole tower includes the following steps: extending a ground down-leading wire from a center of a ground wire cross arm which is made of metal and is positioned on top of the pole tower, wherein the ground down-leading wire is vertically leaded down to the earth form the center of the composite pole tower, wherein when an lower portion of the tower body is a metal pipe, the ground down-leading wire is extended from the center of the composite material and is directly connected to the metal pipe. The method utilizes the advantage of the insulating intensity of the wall of the composite pole tower and enhances the insulating intensity of the transmission line on impact of lightning. The ground down-leading wires are prevented from short-circuiting with the tower body of the composite pole tower, so that advantage of the insulating property of the composite material of the pole towers is realized. Since the ground down-leading wire is penetrated through center of the pole tower, so that the ground down-leading wires are not exposed and are prevented from destroying by external force. And also the method is easy and simple for application.

Abstract translation: 将复合极塔的中心垂直接地和引导向下的方法包括以下步骤：将地面下降的导线从金属制成的地线交叉臂的中心延伸并位于极的顶部 塔，其中地下引线垂直引导到复合极塔的中心的地面，其中当塔体的下部是金属管时，地下导线从中心延伸 的复合材料，并直接连接到金属管。 该方法利用了复合极塔壁绝缘强度的优点，提高了雷击冲击下输电线路的绝缘强度。 防止地面下降的导线与复合极塔的塔体发生短路，从而实现了极塔复合材料绝缘性能的优点。 由于地面下降的导线穿过极塔的中心，使得地面下降的导线不被暴露，并且防止被外力破坏。 而且该方法简单易用。