公开(公告)号：US6037648A

公开(公告)日：2000-03-14

申请号：US105647

申请日：1998-06-26

Applicant: Kenneth C. Arndt ,  Jeffrey P. Gambino ,  Jack A. Mandelman ,  Chandrasekhar Narayan ,  Rainer F. Schnabel ,  Ronald J. Schutz ,  Dirk Tobben

Inventor： Kenneth C. Arndt ,  Jeffrey P. Gambino ,  Jack A. Mandelman ,  Chandrasekhar Narayan ,  Rainer F. Schnabel ,  Ronald J. Schutz ,  Dirk Tobben

IPC: H01L21/82 ,  H01L21/768 ,  H01L23/525 ,  H01L29/00

CPC classification number: H01L21/76885 ,  H01L23/5256 ,  H01L2924/0002

Abstract: A semiconductor structure comprising a semiconductor substrate, an electrically conductive level on the substrate and a metal fuse located at the conductive level wherein the fuse comprises a self-aligned dielectric etch stop layer thereon is provided along with processes for its fabrication.

Abstract translation: 包括半导体衬底的半导体结构，衬底上的导电电平和位于导电水平处的金属熔断器，其中熔丝包括其上的自对准电介质蚀刻停止层以及其制造工艺。

公开(公告)号：US5880007A

公开(公告)日：1999-03-09

申请号：US940650

申请日：1997-09-30

Applicant: Kathryn H. Varian ,  Dirk Tobben ,  Matthew Sendelbach

Inventor： Kathryn H. Varian ,  Dirk Tobben ,  Matthew Sendelbach

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522 ,  H01L21/76

CPC classification number: H01L21/76229 ,  H01L21/31053

Abstract: A substantially planar surface is produced from a non-conformal device layer formed over a complex topography, which includes narrow features with narrow gaps and wide features and wide gaps. A conformal layer is deposited over the non-conformal layer. The surface is then polished to expose the non-conformal layer over the wide features. An etch selective to the non-conformal layer is then used to substantially remove the non-conformal layer over the wide features. The conformal layer is then removed, exposing the non-conformal layer. The thickness of the non-conformal layer is now more uniform as compared to before. This enables the polish to produce a planar surface with reduced dishing in the wide spaces.